BFU530XR transistor Datasheet

BFU530XR Datasheet, PDF, Equivalent


Part Number

BFU530XR

Description

NPN wideband silicon RF transistor

Manufacture

NXP

Total Page 22 Pages
Datasheet
Download BFU530XR Datasheet


BFU530XR
BFU530XR
NPN wideband silicon RF transistor
Rev. 1 — 5 March 2014
Product data sheet
1. Product profile
1.1 General description
NPN silicon RF transistor for high speed, low noise applications in a plastic, 4-pin
dual-emitter SOT143R package.
The BFU530XR is part of the BFU5 family of transistors, suitable for small signal to
medium power applications up to 2 GHz.
1.2 Features and benefits
Low noise, high breakdown RF transistor
AEC-Q101 qualified
Minimum noise figure (NFmin) = 0.65 dB at 900 MHz
Maximum stable gain 21 dB at 900 MHz
11 GHz fT silicon technology
1.3 Applications
Applications requiring high supply voltages and high breakdown voltages
Broadband amplifiers up to 2 GHz
Low noise amplifiers for ISM applications
ISM band oscillators
1.4 Quick reference data
Table 1. Quick reference data
Tamb = 25 C unless otherwise specified
Symbol Parameter
Conditions
VCB collector-base voltage open emitter
VCE collector-emitter voltage open base
shorted base
VEB emitter-base voltage
open collector
IC collector current
Ptot
total power dissipation
Tsp 87 C
hFE DC current gain
IC = 10 mA; VCE = 8 V
Cc collector capacitance VCB = 8 V; f = 1 MHz
fT transition frequency IC = 15 mA; VCE = 8 V; f = 900 MHz
Min Typ Max Unit
--
24 V
--
12 V
--
24 V
--
2V
- 10 40 mA
[1] -
-
450 mW
60 95 200
- 0.36 -
pF
- 11 -
GHz

BFU530XR
NXP Semiconductors
BFU530XR
NPN wideband silicon RF transistor
Table 1. Quick reference data …continued
Tamb = 25 C unless otherwise specified
Symbol Parameter
Conditions
Gp(max)
NFmin
PL(1dB)
maximum power gain
minimum noise figure
output power at 1 dB gain
compression
IC = 10 mA; VCE = 8 V; f = 900 MHz
IC = 1 mA; VCE = 8 V; f = 900 MHz; S = opt
IC = 15 mA; VCE = 8 V; ZS = ZL = 50 ;
f = 900 MHz
[1] Tsp is the temperature at the solder point of the collector lead.
[2] If K > 1 then Gp(max) is the maximum power gain. If K 1 then Gp(max) = MSG.
2. Pinning information
Min
[2] -
-
-
Typ
21
0.65
10.5
Max
-
-
-
Unit
dB
dB
dBm
Table 2.
Pin
1
2
3
4
Discrete pinning
Description
collector
emitter
base
emitter
Simplified outline Graphic symbol





DDD
3. Ordering information
Table 3. Ordering information
Type number Package
Name Description
BFU530XR
-
plastic surface-mounted package; reverse pinning; 4 leads
OM7964
- Customer evaluation kit for BFU520XR, BFU530XR and BFU550XR [1]
[1] The customer evaluation kit contains the following:
a) Unpopulated RF amplifier Printed-Circuit Board (PCB)
b) Unpopulated RF amplifier Printed-Circuit Board (PCB) with emitter degeneration
c) Four SMA connectors for fitting unpopulated Printed-Circuit Board (PCB)
d) BFU520XR, BFU530XR and BFU550XR samples
e) USB stick with data sheets, application notes, models, S-parameter and noise files
4. Marking
Version
SOT143R
-
Table 4. Marking
Type number
BFU530XR
Marking
*TK
Description
* = t : made in Malaysia
* = w : made in China
BFU530XR
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 5 March 2014
© NXP Semiconductors N.V. 2014. All rights reserved.
2 of 22


Features BFU530XR NPN wideband silicon RF transis tor Rev. 1 — 5 March 2014 Product da ta sheet 1. Product profile 1.1 Gener al description NPN silicon RF transisto r for high speed, low noise application s in a plastic, 4-pin dual-emitter SOT1 43R package. The BFU530XR is part of th e BFU5 family of transistors, suitable for small signal to medium power applic ations up to 2 GHz. 1.2 Features and b enefits  Low noise, high breakdown R F transistor  AEC-Q101 qualified  Minimum noise figure (NFmin) = 0.65 dB at 900 MHz  Maximum stable gain 21 dB at 900 MHz  11 GHz fT silicon tec hnology 1.3 Applications  Applicatio ns requiring high supply voltages and h igh breakdown voltages  Broadband am plifiers up to 2 GHz  Low noise ampl ifiers for ISM applications  ISM ban d oscillators 1.4 Quick reference data Table 1. Quick reference data Tamb = 25 C unless otherwise specified Sym bol Parameter Conditions VCB collecto r-base voltage open emitter VCE collector-emitter voltage open base shorted base VEB.
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