BFU550W transistor Datasheet

BFU550W Datasheet, PDF, Equivalent


Part Number

BFU550W

Description

NPN wideband silicon RF transistor

Manufacture

NXP

Total Page 22 Pages
Datasheet
Download BFU550W Datasheet


BFU550W
BFU550W
NPN wideband silicon RF transistor
Rev. 1 — 13 January 2014
Product data sheet
1. Product profile
1.1 General description
NPN silicon RF transistor for high speed, low noise applications in a plastic, 3-pin SOT323
package.
The BFU550W is part of the BFU5 family of transistors, suitable for small signal to
medium power applications up to 2 GHz.
1.2 Features and benefits
Low noise, high breakdown RF transistor
AEC-Q101 qualified
Minimum noise figure (NFmin) = 0.6 dB at 900 MHz
Maximum stable gain 18 dB at 900 MHz
11 GHz fT silicon technology
1.3 Applications
Applications requiring high supply voltages and high breakdown voltages
Broadband amplifiers up to 2 GHz
Low noise amplifiers for ISM applications
ISM band oscillators
1.4 Quick reference data
Table 1. Quick reference data
Tamb = 25 C unless otherwise specified
Symbol Parameter
Conditions
VCB collector-base voltage open emitter
VCE collector-emitter voltage open base
shorted base
VEB emitter-base voltage
open collector
IC collector current
Ptot
total power dissipation
Tsp 87 C
hFE DC current gain
IC = 15 mA; VCE = 8 V
Cc collector capacitance VCB = 8 V; f = 1 MHz
fT transition frequency IC = 25 mA; VCE = 8 V; f = 900 MHz
Min Typ Max Unit
--
24 V
--
12 V
--
24 V
--
2V
- 15 50 mA
[1] -
-
450 mW
60 95 200
- 0.74 -
pF
- 11 -
GHz

BFU550W
NXP Semiconductors
BFU550W
NPN wideband silicon RF transistor
Table 1. Quick reference data …continued
Tamb = 25 C unless otherwise specified
Symbol Parameter
Conditions
Gp(max)
NFmin
PL(1dB)
maximum power gain
minimum noise figure
output power at 1 dB gain
compression
IC = 15 mA; VCE = 8 V; f = 900 MHz
IC = 1 mA; VCE = 8 V; f = 900 MHz; S = opt
IC = 25 mA; VCE = 8 V; ZS = ZL = 50 ;
f = 900 MHz
[1] Tsp is the temperature at the solder point of the collector lead.
[2] If K > 1 then Gp(max) is the maximum power gain. If K 1 then Gp(max) = MSG.
2. Pinning information
Min
[2] -
-
-
Typ
18
0.6
13.5
Max
-
-
-
Unit
dB
dB
dBm
Table 2.
Pin
1
2
3
Discrete pinning
Description
base
emitter
collector
Simplified outline Graphic symbol





DDD
3. Ordering information
Table 3. Ordering information
Type number Package
Name Description
BFU550W - plastic surface-mounted package; 3 leads
OM7960
- Customer evaluation kit for BFU520W, BFU530W and BFU550W [1]
[1] The customer evaluation kit contains the following:
a) Unpopulated RF amplifier Printed-Circuit Board (PCB)
b) Unpopulated RF amplifier Printed-Circuit Board (PCB) with emitter degeneration
c) Four SMA connectors for fitting unpopulated Printed-Circuit Board (PCB)
d) BFU520W, BFU530W and BFU550W samples
e) USB stick with data sheets, application notes, models, S-parameter and noise files
4. Marking
Version
SOT323
-
Table 4. Marking
Type number
BFU550W
Marking
ZC*
Description
* = t : made in Malaysia
* = w : made in China
BFU550W
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 13 January 2014
© NXP B.V. 2014. All rights reserved.
2 of 22


Features 627 BFU550W NPN wideband silicon RF transistor Rev. 1 — 13 January 2014 Product data sheet 1. Product profile 1.1 General description NPN silicon RF transistor for high speed, low noise a pplications in a plastic, 3-pin SOT323 package. The BFU550W is part of the BFU 5 family of transistors, suitable for s mall signal to medium power application s up to 2 GHz. 1.2 Features and benefi ts  Low noise, high breakdown RF tra nsistor  AEC-Q101 qualified  Mini mum noise figure (NFmin) = 0.6 dB at 90 0 MHz  Maximum stable gain 18 dB at 900 MHz  11 GHz fT silicon technolog y 1.3 Applications  Applications req uiring high supply voltages and high br eakdown voltages  Broadband amplifie rs up to 2 GHz  Low noise amplifiers for ISM applications  ISM band osci llators 1.4 Quick reference data Tabl e 1. Quick reference data Tamb = 25  C unless otherwise specified Symbol Pa rameter Conditions VCB collector-base voltage open emitter VCE collector-emitter voltage open base shorted base VEB emitt.
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