Document
627
BFU550W
NPN wideband silicon RF transistor
Rev. 1 — 13 January 2014
Product data sheet
1. Product profile
1.1 General description
NPN silicon RF transistor for high speed, low noise applications in a plastic, 3-pin SOT323 package.
The BFU550W is part of the BFU5 family of transistors, suitable for small signal to medium power applications up to 2 GHz.
1.2 Features and benefits
Low noise, high breakdown RF transistor AEC-Q101 qualified Minimum noise figure (NFmin) = 0.6 dB at 900 MHz Maximum stable gain 18 dB at 900 MHz 11 GHz fT silicon technology
1.3 Applications
Applications requiring high supply voltages and high breakdown voltages Broadband amplifiers up to 2 GHz Low noise amplifiers for ISM applications ISM band oscillators
1.4 Quick reference data
Table 1. Quick reference data Tamb = 25 C unless otherwise specified
Symbol Parameter
Conditions
VCB collector-base voltage open emitter VCE collector-emitter voltage open base
shorted base
VEB emitter-base voltage
open collector
IC collector current
Ptot
total power dissipation
Tsp 87 C
hFE DC current gain
IC = 15 mA; VCE = 8 V
Cc collector capacitance VCB = 8 V; f = 1 MHz
fT transition frequency IC = 25 mA; VCE = 8 V; f = 900 MHz
Min Typ Max Unit
--
24 V
--
12 V
--
24 V
--
2V
- 15 50 mA
[1] -
-
450 mW
60 95 200
- 0.74 -
pF
- 11 -
GHz
NXP Semiconductors
BFU550W
NPN wideband silicon RF transistor
Table 1. Quick reference data …continued Tamb = 25 C unless otherwise specified
Symbol Parameter
Conditions
Gp(max) NFmin PL(1dB)
maximum power gain
minimum noise figure
output power at 1 dB gain compression
IC = 15 mA; VCE = 8 V; f = 900 MHz
IC = 1 mA; VCE = 8 V; f = 900 MHz; S = opt
IC = 25 mA; VCE = 8 V; ZS = ZL = 50 ; f = 900 MHz
[1] Tsp is the temperature at the solder point of the collector lead. [2] If K > 1 then Gp(max) is the maximum power gain. If K 1 then Gp(max) = MSG.
2. Pinning information
Min [2] -
-
Typ 18 0.6 13.5
Max -
Unit dB dB dBm
Table 2. Pin 1 2 3
Discrete pinning Description base emitter collector
Simplified outline Graphic symbol
DDD
3. Ordering information
Table 3. Ordering information
Type number Package
Name Description
BFU550W - plastic surface-mounted package; 3 leads
OM7960
- Customer evaluation kit for BFU520W, BFU530W and BFU550W [1]
[1] The customer evaluation kit contains the following: a) Unpopulated RF amplifier Printed-Circuit Board (PCB) b) Unpopulated RF amplifier Printed-Circuit Board (PCB) with emitter degeneration c) Four SMA connectors for fitting unpopulated Printed-Circuit Board (PCB) d) BFU520W, BFU530W and BFU550W samples e) USB stick with data sheets, application notes, models, S-parameter and noise files
4. Marking
Version SOT323 -
Table 4. Marking Type number BFU550W
Marking ZC*
Description * = t : made in Malaysia * = w : made in China
BFU550W
Product data sheet
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