BFU550XR transistor Datasheet

BFU550XR Datasheet, PDF, Equivalent


Part Number

BFU550XR

Description

NPN wideband silicon RF transistor

Manufacture

NXP

Total Page 21 Pages
Datasheet
Download BFU550XR Datasheet


BFU550XR
BFU550XR
NPN wideband silicon RF transistor
Rev. 2 — 12 April 2019
Product data sheet
1 Product profile
1.1 General description
NPN silicon RF transistor for high speed, low noise applications in a plastic, 4-pin dual-
emitter SOT143R package.
The BFU550XR is part of the BFU5 family of transistors, suitable for small signal to
medium power applications up to 2 GHz.
1.2 Features and benefits
Low noise, high breakdown RF transistor
AEC-Q101 qualified
Minimum noise figure (NFmin) = 0.7 dB at 900 MHz
Maximum stable gain 21.5 dB at 900 MHz
11 GHz fT silicon technology
1.3 Applications
Applications requiring high supply voltages and high breakdown voltages
Broadband amplifiers up to 2 GHz
Low noise amplifiers for ISM applications
ISM band oscillators
1.4 Quick reference data
Table 1. Quick reference data
Tamb = 25 °C unless otherwise specified
Symbol Parameter
Conditions
VCB collector-base voltage open emitter
VCE collector-emitter voltage open base
shorted base
VEB emitter-base voltage
open collector
IC collector current
Ptot
total power dissipation
Tsp ≤ 87 °C
hFE DC current gain
IC = 15 mA; VCE = 8 V
Cc
collector capacitance
VCB = 8 V; f = 1 MHz
fT transition frequency IC = 25 mA; VCE = 8 V; f = 900 MHz
Min Typ Max Unit
--
24 V
--
12 V
--
24 V
--
2V
- 15 50 mA
[1] -
-
450 mW
60 95 200
- 0.41 -
pF
- 11 -
GHz

BFU550XR
NXP Semiconductors
BFU550XR
NPN wideband silicon RF transistor
Symbol
Gp(max)
NFmin
PL(1dB)
Parameter
maximum power gain
minimum noise figure
output power at 1 dB gain
compression
Conditions
IC = 15 mA; VCE = 8 V; f = 900 MHz
IC = 1 mA; VCE = 8 V; f = 900 MHz; ΓS = Γopt
IC = 25 mA; VCE = 8 V; ZS = ZL = 50 Ω; f = 900
MHz
Min Typ Max Unit
[2] - 21.5 -
dB
- 0.70 -
dB
- 13.5 -
dBm
[1] Tsp is the temperature at the solder point of the collector lead.
[2] If K > 1 then Gp(max) is the maximum power gain. If K < 1 then Gp(max) = MSG.
2 Pinning information
Table 2. Discrete pinning
Pin Description
1 collector
2 emitter
3 base
4 emitter
Simplified outline Graphic symbol
34
21
1
3
2, 4
aaa-010457
3 Ordering information
Table 3. Ordering information
Type number Package
Name Description
BFU550XR
OM7964
-
-
plastic surface-mounted package; reverse pinning; 4 leads
Customer evaluation kit for BFU520XR, BFU530XR and BFU550XR [1]
Version
SOT143R
-
[1] The customer evaluation kit contains the following:
Unpopulated RF amplifier Printed-Circuit Board (PCB)
Unpopulated RF amplifier Printed-Circuit Board (PCB) with emitter degeneration
– Four SMA connectors for fitting unpopulated Printed-Circuit Board (PCB)
– BFU520XR, BFU530XR and BFU550XR samples
– USB stick with data sheets, application notes, models, S-parameter and
noise files
4 Marking
Table 4. Marking
Type number
BFU550XR
Marking
*TL
Description
* = t : made in Malaysia
* = w : made in China
BFU550XR
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 12 April 2019
© NXP B.V. 2019. All rights reserved.
2 / 21


Features BFU550XR NPN wideband silicon RF transis tor Rev. 2 — 12 April 2019 Product d ata sheet 1 Product profile 1.1 Gener al description NPN silicon RF transisto r for high speed, low noise application s in a plastic, 4-pin dualemitter SOT14 3R package. The BFU550XR is part of the BFU5 family of transistors, suitable f or small signal to medium power applica tions up to 2 GHz. 1.2 Features and be nefits • Low noise, high breakdown RF transistor • AEC-Q101 qualified • Minimum noise figure (NFmin) = 0.7 dB a t 900 MHz • Maximum stable gain 21.5 dB at 900 MHz • 11 GHz fT silicon tec hnology 1.3 Applications • Applicatio ns requiring high supply voltages and h igh breakdown voltages • Broadband am plifiers up to 2 GHz • Low noise ampl ifiers for ISM applications • ISM ban d oscillators 1.4 Quick reference data Table 1. Quick reference data Tamb = 25 °C unless otherwise specified Sy mbol Parameter Conditions VCB collect or-base voltage open emitter VCE collector-emitter voltage open base shorted base VEB.
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