RF transistor. BFU550XR Datasheet

BFU550XR transistor. Datasheet pdf. Equivalent

BFU550XR Datasheet
Recommendation BFU550XR Datasheet
Part BFU550XR
Description NPN wideband silicon RF transistor
Feature BFU550XR; BFU550XR NPN wideband silicon RF transistor Rev. 2 — 12 April 2019 Product data sheet 1 Product pr.
Manufacture NXP
Datasheet
Download BFU550XR Datasheet




NXP BFU550XR
BFU550XR
NPN wideband silicon RF transistor
Rev. 2 — 12 April 2019
Product data sheet
1 Product profile
1.1 General description
NPN silicon RF transistor for high speed, low noise applications in a plastic, 4-pin dual-
emitter SOT143R package.
The BFU550XR is part of the BFU5 family of transistors, suitable for small signal to
medium power applications up to 2 GHz.
1.2 Features and benefits
Low noise, high breakdown RF transistor
AEC-Q101 qualified
Minimum noise figure (NFmin) = 0.7 dB at 900 MHz
Maximum stable gain 21.5 dB at 900 MHz
11 GHz fT silicon technology
1.3 Applications
Applications requiring high supply voltages and high breakdown voltages
Broadband amplifiers up to 2 GHz
Low noise amplifiers for ISM applications
ISM band oscillators
1.4 Quick reference data
Table 1. Quick reference data
Tamb = 25 °C unless otherwise specified
Symbol Parameter
Conditions
VCB collector-base voltage open emitter
VCE collector-emitter voltage open base
shorted base
VEB emitter-base voltage
open collector
IC collector current
Ptot
total power dissipation
Tsp ≤ 87 °C
hFE DC current gain
IC = 15 mA; VCE = 8 V
Cc
collector capacitance
VCB = 8 V; f = 1 MHz
fT transition frequency IC = 25 mA; VCE = 8 V; f = 900 MHz
Min Typ Max Unit
--
24 V
--
12 V
--
24 V
--
2V
- 15 50 mA
[1] -
-
450 mW
60 95 200
- 0.41 -
pF
- 11 -
GHz



NXP BFU550XR
NXP Semiconductors
BFU550XR
NPN wideband silicon RF transistor
Symbol
Gp(max)
NFmin
PL(1dB)
Parameter
maximum power gain
minimum noise figure
output power at 1 dB gain
compression
Conditions
IC = 15 mA; VCE = 8 V; f = 900 MHz
IC = 1 mA; VCE = 8 V; f = 900 MHz; ΓS = Γopt
IC = 25 mA; VCE = 8 V; ZS = ZL = 50 Ω; f = 900
MHz
Min Typ Max Unit
[2] - 21.5 -
dB
- 0.70 -
dB
- 13.5 -
dBm
[1] Tsp is the temperature at the solder point of the collector lead.
[2] If K > 1 then Gp(max) is the maximum power gain. If K < 1 then Gp(max) = MSG.
2 Pinning information
Table 2. Discrete pinning
Pin Description
1 collector
2 emitter
3 base
4 emitter
Simplified outline Graphic symbol
34
21
1
3
2, 4
aaa-010457
3 Ordering information
Table 3. Ordering information
Type number Package
Name Description
BFU550XR
OM7964
-
-
plastic surface-mounted package; reverse pinning; 4 leads
Customer evaluation kit for BFU520XR, BFU530XR and BFU550XR [1]
Version
SOT143R
-
[1] The customer evaluation kit contains the following:
Unpopulated RF amplifier Printed-Circuit Board (PCB)
Unpopulated RF amplifier Printed-Circuit Board (PCB) with emitter degeneration
– Four SMA connectors for fitting unpopulated Printed-Circuit Board (PCB)
– BFU520XR, BFU530XR and BFU550XR samples
– USB stick with data sheets, application notes, models, S-parameter and
noise files
4 Marking
Table 4. Marking
Type number
BFU550XR
Marking
*TL
Description
* = t : made in Malaysia
* = w : made in China
BFU550XR
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 12 April 2019
© NXP B.V. 2019. All rights reserved.
2 / 21



NXP BFU550XR
NXP Semiconductors
BFU550XR
NPN wideband silicon RF transistor
5 Design support
Table 5. Available design support
Download from the BFU550XR product information page on http://www.nxp.com.
Support item
Available
Remarks
Device models for Agilent EEsof EDA ADS yes
Based on Mextram device model.
SPICE model
yes Based on Gummel-Poon device
model.
S-parameters
yes
Noise parameters
yes
Customer evaluation kit
yes See Section 3 and Section 10.
Solder pattern
yes
Application notes
yes See Section 10.1 and Section 10.2.
6 Limiting values
Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
VCB collector-base voltage
VCE collector-emitter voltage
open emitter
open base
shorted base
VEB
IC
Tstg
VESD
emitter-base voltage
collector current
storage temperature
electrostatic discharge voltage
open collector
Human Body Model (HBM) According to JEDEC
standard 22-A114E
Charged Device Model (CDM) According to
JEDEC standard 22-C101B
Min Max Unit
- 30 V
- 16 V
- 30 V
-3
V
- 80 mA
-65 +150 °C
- ±150 V
- ±2 kV
7 Recommended operating conditions
Table 7. Characteristics
Symbol Parameter
VCB collector-base voltage
VCE collector-emitter voltage
VEB emitter-base voltage
IC collector current
Pi input power
Tj junction temperature
Conditions
open emitter
open base
shorted base
open collector
ZS = 50 Ω
Min Typ Max Unit
- - 24 V
- - 12 V
- - 24 V
--2
V
- - 50 mA
- - 10 dBm
-40 -
+150 °C
BFU550XR
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 12 April 2019
© NXP B.V. 2019. All rights reserved.
3 / 21





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