FAILSAFE SWITCH. HMC646LP2 Datasheet

HMC646LP2 SWITCH. Datasheet pdf. Equivalent

Part HMC646LP2
Description GaAs MMIC 40W FAILSAFE SWITCH
Feature HMC646LP2 / 646LP2E v02.1009 GaAs MMIC 40W FAILSAFE SWITCH, 0.1 - 2.1 GHz Typical Applications Th.
Manufacture Analog Devices
Datasheet
Download HMC646LP2 Datasheet




HMC646LP2
HMC646LP2 / 646LP2E
v02.1009
GaAs MMIC 40W FAILSAFE
SWITCH, 0.1 - 2.1 GHz
Typical Applications
The HMC646LP2(E) is ideal for:
• LNA Protection & T/R Switching
• TD-SCDMA / 3G Infrastructure
• Satellite Subscriber Terminals
• Private Mobile Radio & Public Safety Handsets
• Automotive Telematics
Features
High Input P0.1dB: +46 dBm Tx
Low Insertion Loss: 0.4 dB
High IIP3: +74 dBm
Single Positive Control: 0/+3V to 0/+8V
Failsafe operation; Tx ‘On’ when unpowered
2x2mm DFN SMT Package
Functional Diagram
11
General Description
The HMC646LP2(E) is an SPDT switch in a leadless
DFN surface mount plastic package for use in trans-
mit / receive and LNA protection applications which
require very low distortion and high power handling
of up to 40 watts with less than 10% duty cycle. This
robust switch can control signals from 100 - 2100
MHz* and is ideal for TD-SCDMA / 3G repeaters,
PMR, automotive telematics, and satellite subscriber
terminal applications. The design provides excep-
tional P0.1dB of +46 dBm and +74 dBm IIP3 on the
Transmit (Tx) port. The failsafe topology provides a
low loss path from Tx to RFC, when no DC power is
available.
11 - 216
Electrical Specifications, TA = +25°C, Vdd= 5V, Vctl = 0/+5 Vdc, 50 Ohm System*
Parameter
Min. Typ. Max. Min. Typ. Max.
Frequency Range
869 - 960
1525 - 1661
Insertion Loss
Tx - RFC
RFC - Rx
0.3 0.6
0.4 0.7
0.6 0.9
0.8 1.1
Isolation
Tx - RFC
RFC - Rx
20
28
27
38
15 22
20 30
Return Loss
Tx - RFC
RFC - Rx
17
25
27
20
Input Power for 0.1 dB
Compression
Tx - RFC
RFC - Rx
44
20
46
20
Input Third Order
Intercept (Two-tone input
power = +17 dBm each tone)
Tx - RFC
RFC - Rx
71
41
74
42
Switching Characteristics
tRISE, tFALL (10/90% RF)
tON, (50% CTL to 90% RF)
tOFF (50% CTL to 10% RF)
100
320
320
100
320
320
* Specifications and data reflect HMC646LP2(E) measured using the respective application circuits for each
designated frequency band found herein
Min. Typ. Max
2010 - 2025
0.7 1.0
1.3 1.7
12 17
25 32
25
12
46
20
Units
MHz
dB
dB
dB
dB
dB
dB
dBm
dBm
74 dBm
34 dBm
100 ns
320 ns
320 ns
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HMC646LP2
v02.1009
Insertion Loss vs. Temperature,
Tx with 915 MHz Tuning
0
-0.5
-1
+25C
+85C
-40C
-1.5
-2
0.8 0.85 0.9 0.95
FREQUENCY (GHz)
1
Isolation with 915 MHz Tuning
0
-10 RFC to Tx
RFC to RX
-20
-30
-40
-50
0.8
0.85 0.9 0.95
FREQUENCY (GHz)
1
HMC646LP2 / 646LP2E
GaAs MMIC 40W FAILSAFE
SWITCH, 0.1 - 2.1 GHz
Insertion Loss vs. Temperature,
Rx with 915 MHz Tuning
0
-0.25
-0.5
-0.75
-1
-1.25
-1.5
+25C
+85C
-40C
-1.75
-2
0.8 0.85 0.9 0.95
FREQUENCY (GHz)
1
Return Loss with 915 MHz Tuning
0
Tx, Input
Tx, Output
-10
Rx, Input
Rx, Output
-20
-30
-40
0.8
0.85 0.9 0.95
FREQUENCY (GHz)
1
11
Input IP3 vs. Voltage with 915 MHz Tuning
75
70
65
60
Tx
55 Rx
50
45
40
35
30
25
345678
VOLTAGE (V)
IrrlTiniecgrfaseohpdntrseomsemnoasfatiisibtrohkingislrirtdayafunnpirsdtnaeairdrstesiheFgsbesuiysdomtth2eimrebare0dtyppdmlbiActAryaranaiyAtacdilorlnpoeeneamgshluoo,alDrgatrdkeofDrsvtoeRheiamcevrlereioicwistvetsaihsseieusedfsropbeuy,rr.neoi,dtSlpCiseepeavurrehetscnyadeeinfo,diycftnloamtophttriaebooftsienoer srnrfpaeOtoasscnoulpcryrbareudjdipcerncaat,cfiertvtteeieMentrnogaotoecOnwArmhdirgnadenehnr0nrtegsse-tl1s.eilaorio8bwfnsflAie2pt,ehn.a4oaptHuelaotonlPgetwntsoDehawotviecroesveowrie,.cntheNnweesoocr.:.oh9nFOPAi7ttohpnta8riopetc-nlepiT2ectr.ei:a5ccHc7te0ioh8oi,nt-m1notd3-iS3leto32eulgi49vpyeM-p34rWoy7ir,a0ctFy:a0r,aPno•Pdhxw.OoO:tnoar.9deBv:7epeo1rl8ax-o8c-Cn9e20l1oi05n0o-re60rApd,aN-eoNt3Arwros3La:rwOw7tAwiGo3ono.-aandDlno:,agMloADge.0cv2oic0me6s2,-9In10c.6,
11 - 217







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