HMC646LP2E SWITCH Datasheet

HMC646LP2E Datasheet, PDF, Equivalent


Part Number

HMC646LP2E

Description

GaAs MMIC 40W FAILSAFE SWITCH

Manufacture

Analog Devices

Total Page 8 Pages
Datasheet
Download HMC646LP2E Datasheet


HMC646LP2E
HMC646LP2 / 646LP2E
v02.1009
GaAs MMIC 40W FAILSAFE
SWITCH, 0.1 - 2.1 GHz
Typical Applications
The HMC646LP2(E) is ideal for:
• LNA Protection & T/R Switching
• TD-SCDMA / 3G Infrastructure
• Satellite Subscriber Terminals
• Private Mobile Radio & Public Safety Handsets
• Automotive Telematics
Features
High Input P0.1dB: +46 dBm Tx
Low Insertion Loss: 0.4 dB
High IIP3: +74 dBm
Single Positive Control: 0/+3V to 0/+8V
Failsafe operation; Tx ‘On’ when unpowered
2x2mm DFN SMT Package
Functional Diagram
11
General Description
The HMC646LP2(E) is an SPDT switch in a leadless
DFN surface mount plastic package for use in trans-
mit / receive and LNA protection applications which
require very low distortion and high power handling
of up to 40 watts with less than 10% duty cycle. This
robust switch can control signals from 100 - 2100
MHz* and is ideal for TD-SCDMA / 3G repeaters,
PMR, automotive telematics, and satellite subscriber
terminal applications. The design provides excep-
tional P0.1dB of +46 dBm and +74 dBm IIP3 on the
Transmit (Tx) port. The failsafe topology provides a
low loss path from Tx to RFC, when no DC power is
available.
11 - 216
Electrical Specifications, TA = +25°C, Vdd= 5V, Vctl = 0/+5 Vdc, 50 Ohm System*
Parameter
Min. Typ. Max. Min. Typ. Max.
Frequency Range
869 - 960
1525 - 1661
Insertion Loss
Tx - RFC
RFC - Rx
0.3 0.6
0.4 0.7
0.6 0.9
0.8 1.1
Isolation
Tx - RFC
RFC - Rx
20
28
27
38
15 22
20 30
Return Loss
Tx - RFC
RFC - Rx
17
25
27
20
Input Power for 0.1 dB
Compression
Tx - RFC
RFC - Rx
44
20
46
20
Input Third Order
Intercept (Two-tone input
power = +17 dBm each tone)
Tx - RFC
RFC - Rx
71
41
74
42
Switching Characteristics
tRISE, tFALL (10/90% RF)
tON, (50% CTL to 90% RF)
tOFF (50% CTL to 10% RF)
100
320
320
100
320
320
* Specifications and data reflect HMC646LP2(E) measured using the respective application circuits for each
designated frequency band found herein
Min. Typ. Max
2010 - 2025
0.7 1.0
1.3 1.7
12 17
25 32
25
12
46
20
Units
MHz
dB
dB
dB
dB
dB
dB
dBm
dBm
74 dBm
34 dBm
100 ns
320 ns
320 ns
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HMC646LP2E
v02.1009
Insertion Loss vs. Temperature,
Tx with 915 MHz Tuning
0
-0.5
-1
+25C
+85C
-40C
-1.5
-2
0.8 0.85 0.9 0.95
FREQUENCY (GHz)
1
Isolation with 915 MHz Tuning
0
-10 RFC to Tx
RFC to RX
-20
-30
-40
-50
0.8
0.85 0.9 0.95
FREQUENCY (GHz)
1
HMC646LP2 / 646LP2E
GaAs MMIC 40W FAILSAFE
SWITCH, 0.1 - 2.1 GHz
Insertion Loss vs. Temperature,
Rx with 915 MHz Tuning
0
-0.25
-0.5
-0.75
-1
-1.25
-1.5
+25C
+85C
-40C
-1.75
-2
0.8 0.85 0.9 0.95
FREQUENCY (GHz)
1
Return Loss with 915 MHz Tuning
0
Tx, Input
Tx, Output
-10
Rx, Input
Rx, Output
-20
-30
-40
0.8
0.85 0.9 0.95
FREQUENCY (GHz)
1
11
Input IP3 vs. Voltage with 915 MHz Tuning
75
70
65
60
Tx
55 Rx
50
45
40
35
30
25
345678
VOLTAGE (V)
IrrlTiniecgrfaseohpdntrseomsemnoasfatiisibtrohkingislrirtdayafunnpirsdtnaeairdrstesiheFgsbesuiysdomtth2eimrebare0dtyppdmlbiActAryaranaiyAtacdilorlnpoeeneamgshluoo,alDrgatrdkeofDrsvtoeRheiamcevrlereioicwistvetsaihsseieusedfsropbeuy,rr.neoi,dtSlpCiseepeavurrehetscnyadeeinfo,diycftnloamtophttriaebooftsienoer srnrfpaeOtoasscnoulpcryrbareudjdipcerncaat,cfiertvtteeieMentrnogaotoecOnwArmhdirgnadenehnr0nrtegsse-tl1s.eilaorio8bwfnsflAie2pt,ehn.a4oaptHuelaotonlPgetwntsoDehawotviecroesveowrie,.cntheNnweesoocr.:.oh9nFOPAi7ttohpnta8riopetc-nlepiT2ectr.ei:a5ccHc7te0ioh8oi,nt-m1notd3-iS3leto32eulgi49vpyeM-p34rWoy7ir,a0ctFy:a0r,aPno•Pdhxw.OoO:tnoar.9deBv:7epeo1rl8ax-o8c-Cn9e20l1oi05n0o-re60rApd,aN-eoNt3Arwros3La:rwOw7tAwiGo3ono.-aandDlno:,agMloADge.0cv2oic0me6s2,-9In10c.6,
11 - 217


Features HMC646LP2 / 646LP2E v02.1009 GaAs MMIC 40W FAILSAFE SWITCH, 0.1 - 2.1 GHz Ty pical Applications The HMC646LP2(E) is ideal for: • LNA Protection & T/R Swi tching • TD-SCDMA / 3G Infrastructure • Satellite Subscriber Terminals • Private Mobile Radio & Public Safety H andsets • Automotive Telematics Feat ures High Input P0.1dB: +46 dBm Tx Low Insertion Loss: 0.4 dB High IIP3: +74 d Bm Single Positive Control: 0/+3V to 0/ +8V Failsafe operation; Tx ‘On’ whe n unpowered 2x2mm DFN SMT Package SWIT CHES - SPDT - SMT Functional Diagram 1 1 General Description The HMC646LP2(E) is an SPDT switch in a leadless DFN su rface mount plastic package for use in transmit / receive and LNA protection a pplications which require very low dist ortion and high power handling of up to 40 watts with less than 10% duty cycle . This robust switch can control signal s from 100 - 2100 MHz* and is ideal for TD-SCDMA / 3G repeaters, PMR, automoti ve telematics, and satellite subscriber terminal applications. The design pro.
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