Photomicrosensor. EE-SJ3 Datasheet

EE-SJ3 Photomicrosensor. Datasheet pdf. Equivalent

EE-SJ3 Datasheet
Recommendation EE-SJ3 Datasheet
Part EE-SJ3
Description Photomicrosensor
Feature EE-SJ3; Photomicrosensor (Transmissive) EE-SJ3 Series Be sure to read Precautions on page 25. ■ Dimensions .
Manufacture OMRON
Datasheet
Download EE-SJ3 Datasheet




OMRON EE-SJ3
Photomicrosensor (Transmissive)
EE-SJ3 Series
Be sure to read Precautions on page 25.
Dimensions
Note: All units are in millimeters unless otherwise indicated.
0.3 Center mark
6.2
7.2±0.2
6
Cross section BB
0.2
10.2
7.6±0.3
Four, 0.25
Four, 0.5
2.54±0.2
Cross section AA
Internal Circuit
K
C
AE
Terminal No.
A
K
C
E
Name
Anode
Cathode
Collector
Emitter
Model
EE-SJ3-C
EE-SJ3-D
EE-SJ3-G
Aperture (a x b)
2.1 x 1.0
2.1 x 0.2
0.5 x 2.1
Unless otherwise specified, the
tolerances are as shown below.
Dimensions
Tolerance
3 mm max.
±0.3
3 < mm 6
±0.375
6 < mm 10
±0.45
10 < mm 18
±0.55
18 < mm 30
±0.65
Features
High-resolution model with a 0.2-mm-wide sensing aperture, high-
sensitivity model with a 1-mm-wide sensing aperture, and model
with a horizontal sensing aperture are available.
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Emitter
Forward current IF
Pulse forward IFP
current
Reverse voltage VR
Detector
Collector–Emit- VCEO
ter voltage
Emitter–Collec- VECO
tor voltage
Collector cur- IC
rent
Collector dissi- PC
pation
Ambient tem- Operating
Topr
perature
Storage
Tstg
Soldering temperature
Tsol
Rated value
50 mA (see note 1)
1 A (see note 2)
4V
30 V
---
20 mA
100 mW (see note
1)
–25°C to 85°C
–30°C to 100°C
260°C
(see note 3)
Note: 1. Refer to the temperature rating chart if the ambient temper-
ature exceeds 25°C.
2. The pulse width is 10 μs maximum with a frequency of
100 Hz.
3. Complete soldering within 10 seconds.
Electrical and Optical Characteristics (Ta = 25°C)
Item
Symbol
Emitter
Detector
Forward voltage
Reverse current
Peak emission wave-
length
Light current
Dark current
Leakage current
Collector–Emitter satu-
rated voltage
VF
IR
λP
IL
ID
ILEAK
VCE (sat)
Peak spectral sensitivity λP
wavelength
Rising time
tr
Falling time
tf
Value
EE-SJ3-C
1.2 V typ., 1.5 V max.
EE-SJ3-D
0.01 μA typ., 10 μA max.
940 nm typ.
1 to 28 mA typ.
0.1 mA min.
2 nA typ., 200 nA max.
---
0.1 V typ.,
0.4 V max.
---
850 nm typ.
4 μs typ.
4 μs typ.
EE-SJ3-G
0.5 to 14 mA
0.1 V typ.,
0.4 V max.
Condition
IF = 30 mA
VR = 4 V
IF = 20 mA
IF = 20 mA, VCE = 10 V
VCE = 10 V, 0 lx
---
IF = 20 mA,
IL = 0.1 mA
VCE = 10 V
VCC = 5 V,
RL = 100 Ω,
IL = 5 mA
110 EE-SJ3 Series Photomicrosensor (Transmissive)



OMRON EE-SJ3
Engineering Data
Forward Current vs. Collector
Dissipation Temperature Rating
IF
PC
Forward Current vs. Forward
Voltage Characteristics (Typical)
Ta = 30°C
Ta = 25°C
Ta = 70°C
Light Current vs. Forward Current
Characteristics (Typical)
Ta = 25°C
VCE = 10 V
Ambient temperature Ta (°C)
Light Current vs. CollectorEmitter
Voltage Characteristics (EE-SJ3-G)
Forward voltage VF (V)
Relative Light Current vs. Ambi-
ent Temperature Characteristics
(Typical)
Ta = 25°C
IF = 50 mA
IF = 40 mA
IF = 30 mA
IF = 20 mA
IF = 10 mA
IF = 20 mA
VCE = 5 V
Forward current IF (mA)
Dark Current vs. Ambient
Temperature Characteristics
(Typical)
VCE = 10 V
0 lx
CollectorEmitter voltage VCE (V)
Response Time vs. Load Resist-
ance Characteristics (Typical)
VCC = 5 V
Ta = 25°C
Ambient temperature Ta (°C)
Sensing Position Characteristics
(EE-SJ3-D)
Ambient temperature Ta (°C)
Sensing Position Characteristics
(EE-SJ3-G)
IF = 20 mA
VCE = 10 V
Ta = 25°C
Center of optical axis
IF = 20 mA
VCE = 10 V
Ta = 25°C
0
+
d
Center of optical axis
Load resistance RL (kΩ)
Sensing Position Characteristics
(EE-SJ3-C)
IF = 20 mA
VCE = 10 V
Ta = 25°C
Center of optical axis
Distance d (mm)
Response Time Measurement
Circuit
Input
Output
90 %
10 %
Input
Output
Distance d (mm)
Distance d (mm)
EE-SJ3 Series Photomicrosensor (Transmissive)
111





@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)