Photocouplers. TLP182 Datasheet

TLP182 Photocouplers. Datasheet pdf. Equivalent

TLP182 Datasheet
Recommendation TLP182 Datasheet
Part TLP182
Description Photocouplers
Feature TLP182; Photocouplers Infrared LED & Photo Transistor TLP182 TLP182 1. Applications • Switching Power Supp.
Manufacture Toshiba
Datasheet
Download TLP182 Datasheet




Toshiba TLP182
Photocouplers Infrared LED & Photo Transistor
TLP182
TLP182
1. Applications
• Switching Power Supplies
• Programmable Logic Controllers (PLCs)
• I/O Interface Boards
2. General
TLP182 is a low AC input type photocoupler that consists of phototransistor optically coupled to two antiparallel
infrared LED in a SO6 package.
Since TLP182 is guaranteed high isolation voltage (3750 Vrms) and wide operating temperature (Ta = -55 to 125
), it is suitable for high density surface mounting applications such as programmable controllers.
3. Features
(1) Collector-emitter voltage: 80 V (min)
(2) Current transfer ratio: 50 % (min) (@IF = ±0.5 mA, VCE = 5 V)
GB Rank: 100 % (min) (@IF = ±0.5 mA, VCE = 5 V)
(3) Isolation voltage: 3750 Vrms (min)
(4) Operating temperature: -55 to 125
(5) Safety standards
UL-recognized: UL 1577, File No.E67349
cUL-recognized: CSA Component Acceptance Service No.5A File No.E67349
VDE-approved: EN 60747-5-5, EN 62368-1 (Note 1)
CQC-approved: GB4943.1, GB8898 Thailand Factory
Note 1: When a VDE approved type is needed, please designate the Option (V4).
4. Packaging and Pin Assignment
11-4M1S
©2016-2019
Toshiba Electronic Devices & Storage Corporation
1
1: Anode, Cathode
3: Cathode, Anode
4: Emitter
6: Collector
Start of commercial production
2013-09
2019-10-15
Rev.5.0



Toshiba TLP182
5. Mechanical Parameters
TLP182
Characteristics
Creepage distances
Clearance
Internal isolation thickness
Min Unit
5.0 mm
5.0
0.4
6. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 )
Characteristics
Symbol
Note
Rating
Unit
LED R.M.S. forward current
Input forward current derating
(Ta 90 )
IF(RMS)
IF/Ta
±50
-1.11
mA
mA/
Input forward current (pulsed)
IFP (Note 1)
±1
A
Input power dissipation
Input power dissipation
derating
(Ta 90 )
PD
PD/Ta
100
-2.22
mW
mW/
Junction temperature
Tj 135
Detector Collector-emitter voltage
Emitter-collector voltage
Collector current
VCEO
VECO
IC
80 V
7V
50 mA
Collector power dissipation
Collector power dissipation
derating
(Ta 25 )
PC
PC/Ta
150
-1.36
mW
mW/
Junction temperature
Common Operating temperature
Tj 135
Topr
-55 to 125
Storage temperature
Lead soldering temperature
Total power dissipation
(10 s)
Tstg
Tsol
PT
-55 to 125
260
200
mW
Total power dissipation
derating
(Ta 25 )
PT/Ta
-1.82
mW/
Isolation voltage
(AC, 60 s, R.H. 60 %)
BVS (Note 2)
3750
Vrms
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Pulse width (PW) 0.1 ms, f = 100 Hz
Note 2: This device is considered as a two-terminal device: Pins 1 and 3 are shorted together, and pins 4 and 6 are
shorted together.
7. Electrical Characteristics (Unless otherwise specified, Ta = 25 )
Characteristics
LED Input forward voltage
Input capacitance
Detector Collector-emitter breakdown
voltage
Emitter-collector breakdown
voltage
Dark Current
Collector-emitter capacitance
Symbol
VF
Ct
V(BR)CEO
Note
Test Condition
IF = ±10 mA
V = 0 V, f = 1 MHz
IC = 0.5 mA
Min Typ. Max Unit
1.1 1.25 1.4
60
80  
V
pF
V
V(BR)ECO
IE = 0.1 mA
7  V
IDARK
CCE
VCE = 48 V
0.01 0.08 µA
VCE = 48 V, Ta = 85
2
50 µA
V = 0 V, f = 1 MHz
10 pF
©2016-2019
Toshiba Electronic Devices & Storage Corporation
2
2019-10-15
Rev.5.0



Toshiba TLP182
TLP182
8. Coupled Electrical Characteristics (Unless otherwise specified, Ta = 25 )
Characteristics
Symbol Note
Test Condition
Current transfer ratio
IC/IF (Note 1) IF = ±5 mA, VCE = 5 V
IF = ±5 mA, VCE = 5 V, GB Rank
IF = ±0.5 mA, VCE = 5 V
IF = ±0.5 mA, VCE = 5 V, GB Rank
Saturated current transfer ratio
IC/IF(sat)
IF = ±1 mA, VCE = 0.4 V
IF = ±1 mA, VCE = 0.4 V, GB Rank
Collector-emitter saturation voltage VCE(sat)
IC = 2.4 mA, IF = ±8 mA
IC = 0.2 mA, IF = ±1 mA
IC = 0.2 mA, IF = ±1 mA, GB Rank
OFF-state collector current
IC(off)
VF = ±0.7 V, VCE = 48 V
Collector current ratio
IC(ratio)
See Fig. 8.1.
IC(IF = -5 mA) / IC(IF = 5 mA)
Note 1: See Table 8.1 for current transfer ratio.
Min Typ. Max Unit
50 600 %
100 600
50 600
100 600
60
30  
  0.3 V
0.2
  0.3
1 10 µA
0.33 3
Table 8.1 Current Transfer Ratio (CTR) Rank (Note) (Unless otherwise specified, Ta = 25 )
Rank
Rank
short
code
Note
Test Condition
Current transfer ratio Current transfer ratio
IC/IF
(min)
IC/IF
(max)
Marking of
classification
Unit
Blank
Y
GR
GB
BL
IF = ±5 mA, VCE = 5 V
IF = ±0.5 mA, VCE = 5 V
IF = ±5 mA, VCE = 5 V
IF = ±0.5 mA, VCE = 5 V
IF = ±5 mA, VCE = 5 V
IF = ±0.5 mA, VCE = 5 V
IF = ±5 mA, VCE = 5 V
IF = ±0.5 mA, VCE = 5 V
IF = ±5 mA, VCE = 5 V
IF = ±0.5 mA, VCE = 5 V
50
50
100
100
200
600 Blank, YE, GR, GB, %
BL
150 YE
300 GR
600 GB,GR,BL
600 BL
Note:
Specify both the part number and a rank in this format when ordering.
Example: TLP182(GB,E
For safety standard certification, however, specify the part number alone.
Example: TLP182(GB,E TLP182
Fig. 8.1 Collector Current Ratio Test Circuit
©2016-2019
Toshiba Electronic Devices & Storage Corporation
3
2019-10-15
Rev.5.0





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