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TCR2EF105 Dataheets PDF



Part Number TCR2EF105
Manufacturers Toshiba
Logo Toshiba
Description 200mA CMOS Low Dropout Regulator
Datasheet TCR2EF105 DatasheetTCR2EF105 Datasheet (PDF)

TCR2EF series, TCR2EE series TOSHIBA CMOS Linear Integrated Circuit Silicon Monolithic TCR2EF series TCR2EE series 200 mA CMOS Low Dropout Regulator with Fast Load Transient Response The TCR2EF and TCR2EE series are CMOS single output voltage regulators with an on/off control input, featuring low dropout voltage, low output noise voltage and fast load transient response. These voltage regulators are available in fixed output voltages between 1.0 V and 5.0 V and capable of driving up to 200 mA..

  TCR2EF105   TCR2EF105



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TCR2EF series, TCR2EE series TOSHIBA CMOS Linear Integrated Circuit Silicon Monolithic TCR2EF series TCR2EE series 200 mA CMOS Low Dropout Regulator with Fast Load Transient Response The TCR2EF and TCR2EE series are CMOS single output voltage regulators with an on/off control input, featuring low dropout voltage, low output noise voltage and fast load transient response. These voltage regulators are available in fixed output voltages between 1.0 V and 5.0 V and capable of driving up to 200 mA. They feature overcurrent protection, an Auto-discharge function. The TCR2EF and TCR2EE series has a low dropout voltage of 180 mV (2.5 V output, IOUT = 150 mA) with low output noise voltage of 35 μVrms (2.5 V output) and a load transient response of only ⊿VOUT = ±60 mV (IOUT = 1 mA⇔150 mA, COUT = 1.0 μF). Thus, the TCR2EF and TCR2EE series are suitable for sensitive power supply such as Analog and RF applications. SMV Features ESV • Low dropout voltage VDO = 150 mV (typ.) at 3.0 V output, IOUT = 150 mA VDO = 180 mV (typ.) at 2.5 V output, IOUT = 150 mA Weight : SMV (SOT-25)(SC-74A) : 16 mg ( typ.) ESV (SOT-553) : 3.0 mg ( typ.) VDO = 230 mV (typ.) at 1.8 V output, IOUT = 150 mA VDO = 380 mV (typ.) at 1.2 V output, IOUT = 150 mA VDO = 510 mV (typ.) at 1.0 V output, IOUT = 150 mA • Low output noise voltage (VNO = 35 μVrms (typ.) at 2.5 V output, IOUT = 10 mA, 10 Hz < f < 100 kHz) • Fast load transient response (⊿VOUT = ±60 mV (typ.) at IOUT = 1 mA ⇔ 150 mA, COUT =1.0 μF) • Low quiescent bias current (IB = 35 μA (typ.) at IOUT = 0 mA) • High ripple rejection ratio (73 dB (typ.) at 2.5 V output, IOUT = 10 mA, f = 1 kHz) • Wide range output voltage line up (VOUT = 1.0 to 5.0 V) • High VOUT accuracy ±1.0 % (1.8 V ≤ VOUT) • Overcurrent protection • Auto-discharge • Pull down connection between CONTROL and GND • Ceramic capacitors can be used (CIN = 0.1 μF, COUT = 1.0 μF) • Small package ESV (SOT-553) (1.6 mm x 1.6 mm x 0.55 mm) General package SMV (SOT-25) (2.8 mm x 2.9 mm x 1.1 mm) © 2017-2019 Toshiba Electronic Devices & Storage Corporation 1 Start of commercial production 2012-10 2019-06-20 Absolute Maximum Ratings (Ta = 25°C) TCR2EF series, TCR2EE series Characteristics Symbol Rating Unit Input voltage Control voltage Output voltage Power dissipation Junction temperature Storage temperature range VIN VCT VOUT PD Tj Tstg SMV ESV 6.0 -0.3 to 6.0 -0.3 to VIN + 0.3 200 (Note 1) 580 (Note 2) 150 (Note 1) 320 (Note 3) 150 −55 to 150 V V V mW °C °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precau.


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