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TCR3DM25 Dataheets PDF



Part Number TCR3DM25
Manufacturers Toshiba
Logo Toshiba
Description 300mA CMOS Low Drop-Out Regulator
Datasheet TCR3DM25 DatasheetTCR3DM25 Datasheet (PDF)

TCR3DM series TOSHIBA CMOS Linear Integrated Circuit Silicon Monolithic TCR3DM series 300 mA CMOS Low Drop-Out Regulator with inrush current protection circuit The TCR3DM series are CMOS general-purpose single-output voltage regulators with an on/off control input, featuring low dropout voltage, low output noise voltage and low inrush current. These voltage regulators are available in fixed output voltages between 1.0 V and 4.5 V and capable of driving up to 300 mA. They feature over-curr.

  TCR3DM25   TCR3DM25



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TCR3DM series TOSHIBA CMOS Linear Integrated Circuit Silicon Monolithic TCR3DM series 300 mA CMOS Low Drop-Out Regulator with inrush current protection circuit The TCR3DM series are CMOS general-purpose single-output voltage regulators with an on/off control input, featuring low dropout voltage, low output noise voltage and low inrush current. These voltage regulators are available in fixed output voltages between 1.0 V and 4.5 V and capable of driving up to 300 mA. They feature over-current protection, over-temperature protection, Inrush current protection circuit and Auto-discharge function. The TCR3DM series are offered in the ultra small plastic mold package DFN4 (1.0 mm x 1.0 mm; t 0.58 mm). It has a low dropout voltage of 210 mV (2.5 V output, IOUT = 300 mA) with low output noise voltage of 38 μVrms (2.5 V output) and a load transient response of only ΔVOUT = ±80 mV ( IOUT = 1 mA⇔300 mA, COUT =1.0 μF). BOTTOM VIEW ILLUSTRATION DFN4 Weight : 1.3 mg ( typ.) As small ceramic input and output capacitors can be used with the TCR3DM series, these devices are ideal for portable applications that require high-density board assembly such as cellular phones. Features • Low Drop-Out voltage VIN-VOUT = 210 mV (typ.) at 2.5 V-output, IOUT = 300 mA VIN-VOUT = 270 mV (typ.) at 1.8 V-output, IOUT = 300 mA VIN-VOUT = 490 mV (typ.) at 1.2 V-output, IOUT = 300 mA • Low output noise voltage VNO = 38 μVrms (typ.) at 2.5 V-output, IOUT = 10 mA, 10 Hz ≤ f ≤ 100 kHz • Fast load transient response (ΔVOUT = ±80 mV (typ.) at IOUT = 1 mA⇔ 300 mA, COUT =1.0 μF ) • High ripple rejection ( R.R = 70 dB (typ.) at 2.5V-output, IOUT = 10 mA, f =1kHz ) • Over-current protection • Over-temperature protection • Inrush current protection circuit • Auto-discharge function • Pull down connection between CONTROL and GND • Ceramic capacitors can be used ( CIN = 1.0μF, COUT =1.0 μF ) • Ultra small package DFN4 (1.0 mm x 1.0 mm ; t 0.58 mm ) Start of commercial production 2013-03 1 2017-06-20 Absolute Maximum Ratings (Ta = 25°C) Characteristics Input voltage Control voltage Output voltage Output current Power dissipation Operation temperature range Junction temperature Storage temperature range Symbol VIN VCT VOUT IOUT PD Topr Tj Tstg Rating Unit 6.0 -0.3 to 6.0 -0.3 to VIN + 0.3 300 420 (Note1) -40 to 85 150 -55 to 150 V V V mA mW °C °C °C TCR3DM series Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rat.


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