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TCR2EN11 Dataheets PDF



Part Number TCR2EN11
Manufacturers Toshiba
Logo Toshiba
Description 200mA CMOS Low Drop-Out Regulator
Datasheet TCR2EN11 DatasheetTCR2EN11 Datasheet (PDF)

TCR2EN series TOSHIBA CMOS Linear Integrated Circuit Silicon Monolithic TCR2EN series 200 mA CMOS Low Drop-Out Regulator in ultra small package The TCR2EN series are CMOS general-purpose single-output voltage regulators with an on/off control input, featuring low dropout voltage, low quiescent bias current and fast load transient response. These voltage regulators are available in fixed output voltages between 1.0 V and 3.6 V and capable of driving up to 200 mA. They feature overcurrent protec.

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TCR2EN series TOSHIBA CMOS Linear Integrated Circuit Silicon Monolithic TCR2EN series 200 mA CMOS Low Drop-Out Regulator in ultra small package The TCR2EN series are CMOS general-purpose single-output voltage regulators with an on/off control input, featuring low dropout voltage, low quiescent bias current and fast load transient response. These voltage regulators are available in fixed output voltages between 1.0 V and 3.6 V and capable of driving up to 200 mA. They feature overcurrent protection and an Auto-discharge function. The TCR2EN series is offered in the ultra small plastic mold package SDFN4 (0.8 mm x 0.8 mm x 0.38 mm). It has a low dropout voltage of 160 mV ( 2.5 V output, IOUT = 150 mA) with low output noise voltage of 35 μVrms (2.5 V output) and a load transient response of only ⊿VOUT = ±55 mV ( IOUT = 1 mA⇔150 mA, COUT =1.0 μF). As small ceramic input and output capacitors can be used with the TCR2EN series, these devices are ideal for portable applications that require high-density board assembly such as cellular phones. BOTTOM VIEW ILLUSTRATION SDFN4 Weight: 0.6 mg (typ.) Features • Low Drop-Out voltage VIN-VOUT = 160 mV (typ.) at 2.5 V-output, IOUT = 150 mA VIN-VOUT = 210 mV (typ.) at 1.8 V-output, IOUT = 150 mA VIN-VOUT = 360 mV (typ.) at 1.2 V-output, IOUT = 150 mA VIN-VOUT = 490 mV (typ.) at 1.0 V-output, IOUT = 150 mA • Low output noise voltage VNO = 35 μVrms (typ.) at 2.5 V-output, IOUT = 10 mA, 10 Hz < f < 100 kHz VNO = 30 μVrms (typ.) at 1.8 V-output, IOUT = 10 mA, 10 Hz < f < 100 kHz VNO = 23 μVrms (typ.) at 1.2 V-output, IOUT = 10 mA, 10 Hz < f < 100 kHz VNO = 18 μVrms (typ.) at 1.0 V-output, IOUT = 10 mA, 10 Hz < f < 100 kHz • Fast load transient response (⊿VOUT = ±55 mV (typ.) at IOUT = 1 mA ⇔ 150 mA, COUT =1.0 μF ) • Low quiescent bias current ( IB = 35 μA (typ.) at IOUT = 0 mA ) • High ripple rejection ( R.R = 73 dB (typ.) at 2.5 V-output, IOUT = 10 mA, f = 1 kHz ) • Wide range Output Voltage line up ( VOUT = 1.0 to 3.6 V ) • High VOUT accuracy ±1.0% ( 1.8 V ≤ VOUT ) • Overcurrent protection • Auto-discharge • Pull down connection between CONTROL and GND • Ceramic capacitors can be used ( CIN = 0.1μF, COUT =1.0 μF ) • Ultra Small package SDFN4 (0.8 mm x 0.8 mm x 0.38 mm ) Start of commercial production 2013-11 1 2014-03-01 TCR2EN series Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Input voltage Control voltage Output voltage Output current Power dissipation Operation temperature range Junction temperature Storage temperature range VIN VCT VOUT IOUT PD Topr Tj Tstg 6.0 -0.3 to 6.0 -0.3 to VIN + 0.3 200 300 (Note1) −40 to 85 150 −55 to 150 V V V mA mW °C °C °C Note: Note1: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within .


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