HMC907LP5E AMPLIFIER Datasheet

HMC907LP5E Datasheet, PDF, Equivalent


Part Number

HMC907LP5E

Description

GaAs pHEMT MMIC POWER AMPLIFIER

Manufacture

Analog Devices

Total Page 8 Pages
Datasheet
Download HMC907LP5E Datasheet


HMC907LP5E
v00.0510
Typical Applications
The HMC907LP5E is ideal for:
• Test Instrumentation
• Microwave Radio & VSAT
• Military & Space
9 • Telecom Infrastructure
• Fiber Optics
Functional Diagram
HMC907LP5E
GaAs pHEMT MMIC
POWER AMPLIFIER, 0.2 - 22 GHz
Features
High P1dB Output Power: +26 dBm
High Gain: 12 dB
High Output IP3: +36 dBm
Single Supply: +10 V @ 350 mA
50 Ohm Matched Input/Output
32 Lead 5x5 mm SMT Package: 25 mm²
General Description
The HMC907LP5E is a GaAs MMIC pHEMT Distributed
Power Amplifier which operates between 0.2 and
22 GHz. This self-biased power amplifier provides
12 dB of gain, +36 dBm output IP3 and +26 dBm of
output power at 1 dB gain compression while requir-
ing only 350 mA from a +10 V supply. Gain flatness is
excellent at ±0.7 dB from 0.2 to 22 GHz making the
HMC907LP5E ideal for EW, ECM, Radar and test
equipment applications. The HMC907LP5E amplifier
I/Os are internally matched to 50 Ohms facilitating
integration into Mutli-Chip-Modules (MCMs) and is
packaged in a leadless QFN 5x5 mm surface mount
package, and requires no external matching compo-
nents.
9-1
Electrical Specifications, TA = +25 °C, Vdd = +10 V, Idd = 350 mA
Parameter
Frequency Range
Gain
Gain Flatness
Gain Variation Over Temperature
Input Return Loss
Output Return Loss
Output Power for 1 dB Compression (P1dB)
Saturated Output Power (Psat)
Output Third Order Intercept (IP3)
Noise Figure
Supply Current
(Idd) (Vdd= 10V)
Min. Typ. Max.
0.2 - 10
10 12
±0.7
0.01
15
13
23 26
28.5
36
3.5
350 400
Min. Typ. Max.
10 - 18
10 11.5
±0.6
0.013
9
12
21 25
27
34
3.5
350 400
Min.
10
19.5
Typ.
18 - 22
11.5
±0.7
0.014
8
8
21.5
24.5
31
4
350
Max.
400
Units
GHz
dB
dB
dB/ °C
dB
dB
dBm
dBm
dBm
dB
mA
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HMC907LP5E
v00.0510
Gain & Return Loss
20
10
0
S21
S11
S22
-10
-20
-30
0
5 10 15 20 25
FREQUENCY (GHz)
30
Input Return Loss vs. Temperature
0
-10
-20
-30 +25C
+85C
-40C
-40
0 4 8 12 16 20 24
FREQUENCY (GHz)
Reverse Isolation vs. Temperature
0
-10
-20
+25C
+85C
-40C
-30
-40
-50
-60
0 4 8 12 16 20
FREQUENCY (GHz)
24
HMC907LP5E
GaAs pHEMT MMIC
POWER AMPLIFIER, 0.2 - 22 GHz
Gain vs. Temperature
16
14
12
10
8
+25C
+85C
-40C
6
0 4 8 12 16 20
FREQUENCY (GHz)
24
Output Return Loss vs. Temperature
0
-10
-20
-30
+25C
+85C
-40C
-40
0 4 8 12 16 20 24
FREQUENCY (GHz)
Gain vs. Vdd
16
14
12
10
+8V
8
+9V
+10V
+11V
6
0 4 8 12 16 20
FREQUENCY (GHz)
24
9
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9-2


Features v00.0510 Typical Applications The HMC907 LP5E is ideal for: • Test Instrumenta tion • Microwave Radio & VSAT • Mil itary & Space 9 • Telecom Infrastruct ure • Fiber Optics Functional Diagram HMC907LP5E GaAs pHEMT MMIC POWER AMPL IFIER, 0.2 - 22 GHz Features High P1dB Output Power: +26 dBm High Gain: 12 dB High Output IP3: +36 dBm Single Supply: +10 V @ 350 mA 50 Ohm Matched Input/Ou tput 32 Lead 5x5 mm SMT Package: 25 mm General Description The HMC907LP5E is a GaAs MMIC pHEMT Distributed Power Am plifier which operates between 0.2 and 22 GHz. This self-biased power amplifie r provides 12 dB of gain, +36 dBm outpu t IP3 and +26 dBm of output power at 1 dB gain compression while requiring onl y 350 mA from a +10 V supply. Gain flat ness is excellent at ±0.7 dB from 0.2 to 22 GHz making the HMC907LP5E ideal f or EW, ECM, Radar and test equipment ap plications. The HMC907LP5E amplifier I/ Os are internally matched to 50 Ohms fa cilitating integration into Mutli-Chip-Modules (MCMs) and is packaged in a .
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