HMC907LP5E

v00.0510 Typical Applications The HMC907LP5E is ideal for: Test Instrumentation Microwave Radio & VSAT Military & Space 9 Telecom Infrastructure Fiber Optics Functional Diagram HMC907LP5E GaAs pHEMT MMIC POWER AMPLIFIER, 0.2 - 22 GHz Features High P1dB Output Power: +26 dBm High Gain: 12 dB High Output IP3: +36 dBm Single Supply: +10 V @ 350 mA 50 Ohm Matched Input/Output 32 Lead 5x5 mm SMT Package: 25 mm² General Description The HMC907LP5E is a GaAs MMIC pHEMT Distributed Power Amplifier which operates between 0.2 and 22 GHz. This self-biased power amplifier provides 12 dB of gain, +36 dBm output IP3 and +26 dBm of output power at 1 dB gain compression while requiring only 350 mA from a +10 V supply. Gain flatness is excellent at ±0.7 dB from 0.2 to 22 GHz making the HMC907LP5E ideal for EW, ECM, Radar and test equipment applications. The HMC907LP5E amplifier I/Os are internally matched to 50 Ohms facilitating integration into Mutli-Chip-Modules (MCMs) and is packaged in a leadless QFN 5x5 mm surface mount package, and requires no external matching components. Amplifiers - Linear & Power - SMT 9-1 Electrical Specifications, TA = +25 °C, Vdd = +10 V, Idd = 350 mA Parameter Frequency Range Gain Gain Flatness Gain Variation Over Temperature Input Return Loss Output Return Loss Output Power for 1 dB Compression (P1dB) Saturated Output Power (Psat) Output Third Order Intercept (IP3) Noise Figure Supply Current (Idd) (Vdd= 10V) Min. Typ. Max. 0.2 - 10 10 12 ±0.7 0....