CSD19506KCS MOSFET Datasheet

CSD19506KCS Datasheet, PDF, Equivalent


Part Number

CSD19506KCS

Description

80V N-Channel NexFET Power MOSFET

Manufacture

etcTI

Total Page 12 Pages
Datasheet
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CSD19506KCS
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CSD19506KCS
SLPS481B – DECEMBER 2013 – REVISED OCTOBER 2014
CSD19506KCS 80 V N-Channel NexFET™ Power MOSFET
1 Features
1 Ultra-Low Qg and Qgd
• Low Thermal Resistance
• Avalanche Rated
• Pb-Free Terminal Plating
• RoHS Compliant
• Halogen Free
• TO-220 Plastic Package
2 Applications
• Secondary Side Synchronous Rectifier
• Motor Control
3 Description
This 80 V, 2.0 mΩ, TO-220 NexFET™ power
MOSFET is designed to minimize losses in power
conversion applications.
SPACE
Drain (Pin 2)
Gate
(Pin 1)
.
Source (Pin 3)
Product Summary
TA = 25°C
VDS Drain-to-Source Voltage
Qg Gate Charge Total (10 V)
Qgd Gate Charge Gate to Drain
RDS(on) Drain-to-Source On Resistance
VGS(th) Threshold Voltage
TYPICAL VALUE
80
120
20
VGS = 6 V
VGS = 10 V
2.5
2.2
2.0
UNIT
V
nC
nC
m
m
V
Device
CSD19506KCS
Ordering Information(1)
Package
Media
TO-220 Plastic Package Tube
Qty
50
Ship
Tube
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
Absolute Maximum Ratings
TA = 25°C
VDS Drain-to-Source Voltage
VGS Gate-to-Source Voltage
Continuous Drain Current (Package limited)
VALUE
80
±20
150
UNIT
V
V
Continuous Drain Current (Silicon limited),
ID TC = 25°C
273
Continuous Drain Current (Silicon limited),
TC = 100°C
IDM Pulsed Drain Current (1)
193
400
PD Power Dissipation
375
TJ, Operating Junction and
Tstg Storage Temperature Range
–55 to 175
EAS
Avalanche Energy, single pulse
ID = 129 A, L = 0.1 mH, RG = 25
832
A
A
W
°C
mJ
(1) Max RθJC = 0.4°C/W, pulse duration 100 μs, duty cycle 1%
RDS(on) vs VGS
10
9
TC = 25°C,I D = 100A
TC = 125°C,I D = 100A
8
7
6
5
4
3
2
1
0
0 2 4 6 8 10 12 14 16 18 20
VGS - Gate-to- Source Voltage (V)
G001
Gate Charge
10
9
ID = 100A
VDS = 40V
8
7
6
5
4
3
2
1
0
0 20 40 60 80 100 120 140
Qg - Gate Charge (nC)
G001
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.

CSD19506KCS
CSD19506KCS
SLPS481B – DECEMBER 2013 – REVISED OCTOBER 2014
www.ti.com
Table of Contents
1 Features .................................................................. 1
2 Applications ........................................................... 1
3 Description ............................................................. 1
4 Revision History..................................................... 2
5 Specifications......................................................... 3
5.1 Electrical Characteristics........................................... 3
5.2 Thermal Information .................................................. 3
5.3 Typical MOSFET Characteristics .............................. 4
6 Device and Documentation Support.................... 7
6.1 Trademarks ............................................................... 7
6.2 Electrostatic Discharge Caution ................................ 7
6.3 Glossary .................................................................... 7
7 Mechanical, Packaging, and Orderable
Information ............................................................. 8
7.1 KCS Package Dimensions........................................ 9
4 Revision History
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
Changes from Revision A (February 2014) to Revision B
Page
• Changed Pulsed Drain Current Conditions ........................................................................................................................... 1
• Updated the SOA in Figure 10 ............................................................................................................................................... 6
Changes from Original (December 2013) to Revision A
Page
• Increased Package Current Limit to 150 A ........................................................................................................................... 1
• Increased Pulsed Drain Current to 400 A ............................................................................................................................. 1
• Updated SOA Curve .............................................................................................................................................................. 5
2 Submit Documentation Feedback
Copyright © 2013–2014, Texas Instruments Incorporated
Product Folder Links: CSD19506KCS


Features Product Folder Sample & Buy Technical Documents Tools & Software Support & Community CSD19506KCS SLPS481B – DEC EMBER 2013 – REVISED OCTOBER 2014 CSD 19506KCS 80 V N-Channel NexFET™ Power MOSFET 1 Features •1 Ultra-Low Qg a nd Qgd • Low Thermal Resistance • A valanche Rated • Pb-Free Terminal Pla ting • RoHS Compliant • Halogen Fre e • TO-220 Plastic Package 2 Applica tions • Secondary Side Synchronous Re ctifier • Motor Control 3 Descriptio n This 80 V, 2.0 mΩ, TO-220 NexFET™ power MOSFET is designed to minimize lo sses in power conversion applications. SPACE Drain (Pin 2) Gate (Pin 1) . Source (Pin 3) Product Summary TA = 2 5°C VDS Drain-to-Source Voltage Qg Gat e Charge Total (10 V) Qgd Gate Charge G ate to Drain RDS(on) Drain-to-Source On Resistance VGS(th) Threshold Voltage TYPICAL VALUE 80 120 20 VGS = 6 V V GS = 10 V 2.5 2.2 2.0 UNIT V nC nC m mΩ V Device CSD19506KCS Ordering Information(1) Package Media TO-220 Plastic Package Tube Qty 50 Ship Tube (1) For all av.
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