80V N-Channel NexFET Power MOSFET
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CSD19506KCS
SLPS481B – DECEMBE...
Description
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CSD19506KCS
SLPS481B – DECEMBER 2013 – REVISED OCTOBER 2014
CSD19506KCS 80 V N-Channel NexFET™ Power MOSFET
1 Features
1 Ultra-Low Qg and Qgd Low Thermal Resistance Avalanche Rated Pb-Free Terminal Plating RoHS Compliant Halogen Free TO-220 Plastic Package
2 Applications
Secondary Side Synchronous Rectifier Motor Control
3 Description
This 80 V, 2.0 mΩ, TO-220 NexFET™ power MOSFET is designed to minimize losses in power conversion applications.
SPACE
Drain (Pin 2)
Gate (Pin 1)
.
Source (Pin 3)
Product Summary
TA = 25°C VDS Drain-to-Source Voltage Qg Gate Charge Total (10 V) Qgd Gate Charge Gate to Drain
RDS(on) Drain-to-Source On Resistance
VGS(th) Threshold Voltage
TYPICAL VALUE
80
120
20
VGS = 6 V VGS = 10 V
2.5
2.2 2.0
UNIT V nC nC mΩ mΩ V
Device CSD19506KCS
Ordering Information(1)
Package
Media
TO-220 Plastic Package Tube
Qty 50
Ship Tube
(1) For all available packages, see the orderable addendum at the end of the data sheet.
Absolute Maximum Ratings
TA = 25°C VDS Drain-to-Source Voltage VGS Gate-to-Source Voltage
Continuous Drain Current (Package limited)
VALUE 80 ±20 150
UNIT V V
Continuous Drain Current (Silicon limited), ID TC = 25°C
273
Continuous Drain Current (Silicon limited), TC = 100°C
IDM Pulsed Drain Current (1)
193 400
PD Power Dissipation
375
TJ, Operating Junction and Tstg Storage Temperature Range
–55 to 175
EAS
A...
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