CSD19506KTT MOSFET Datasheet

CSD19506KTT Datasheet, PDF, Equivalent


Part Number

CSD19506KTT

Description

80V N-Channel NexFET Power MOSFET

Manufacture

etcTI

Total Page 12 Pages
Datasheet
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CSD19506KTT
SLPS586 – MARCH 2016
CSD19506KTT 80 V N-Channel NexFET™ Power MOSFET
1 Features
1 Ultra-Low Qg and Qgd
• Low Thermal Resistance
• Avalanche Rated
• Pb-Free Terminal Plating
• RoHS Compliant
• Halogen Free
• D2PAK Plastic Package
2 Applications
• Secondary Side Synchronous Rectifier
• Motor Control
3 Description
This 80-V, 2.0-mΩ, D2PAK (TO-263) NexFET™
power MOSFET is designed to minimize losses in
power conversion applications.
SPACE
Drain (Pin 2)
Gate
(Pin 1)
.
Source (Pin 3)
Product Summary
TA = 25°C
VDS Drain-to-Source Voltage
Qg Gate Charge Total (10 V)
Qgd Gate Charge Gate to Drain
RDS(on) Drain-to-Source On Resistance
VGS(th) Threshold Voltage
TYPICAL VALUE
80
120
20
VGS = 6 V
VGS = 10 V
2.5
2.2
2.0
UNIT
V
nC
nC
m
m
V
DEVICE
CSD19506KTT
CSD19506KTTT
Ordering Information(1)
QTY MEDIA
PACKAGE
500
50
13-Inch
Reel
D2PAK Plastic Package
SHIP
Tape &
Reel
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
Absolute Maximum Ratings
TA = 25°C
VDS Drain-to-Source Voltage
VGS Gate-to-Source Voltage
Continuous Drain Current (Package limited)
VALUE
80
±20
200
UNIT
V
V
Continuous Drain Current (Silicon limited),
ID TC = 25°C
291
Continuous Drain Current (Silicon limited),
TC = 100°C
IDM Pulsed Drain Current (1)
206
400
PD Power Dissipation
375
TJ, Operating Junction and
Tstg Storage Temperature Range
–55 to 175
EAS
Avalanche Energy, single pulse
ID = 129 A, L = 0.1 mH, RG = 25
832
A
A
W
°C
mJ
(1) Max RθJC = 0.4°C/W, pulse duration 100 μs, duty cycle 1%
RDS(on) vs VGS
10
9
TC = 25°C, I D = 100 A
TC = 125°C, I D = 100 A
8
7
6
5
4
3
2
1
0
0 2 4 6 8 10 12 14 16 18 20
VGS - Gate-to-Source Voltage (V)
D007
Gate Charge
10
9
ID = 100 A
VDS = 40 V
8
7
6
5
4
3
2
1
0
0 20 40 60 80 100 120 140
Qg - Gate Charge (nC)
D004
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.

CSD19506KTT
CSD19506KTT
SLPS586 – MARCH 2016
www.ti.com
Table of Contents
1 Features .................................................................. 1
2 Applications ........................................................... 1
3 Description ............................................................. 1
4 Revision History..................................................... 2
5 Specifications......................................................... 3
5.1 Electrical Characteristics........................................... 3
5.2 Thermal Information .................................................. 3
5.3 Typical MOSFET Characteristics.............................. 4
6 Device and Documentation Support.................... 7
6.1 Community Resources.............................................. 7
6.2 Trademarks ............................................................... 7
6.3 Electrostatic Discharge Caution ................................ 7
6.4 Glossary .................................................................... 7
7 Mechanical, Packaging, and Orderable
Information ............................................................. 8
7.1 KTT Package Dimensions ........................................ 8
7.2 Recommended PCB Pattern..................................... 9
7.3 Recommended Stencil Opening (0.125 mm Stencil
Thickness).................................................................. 9
4 Revision History
DATE
March 2016
REVISION
*
NOTES
Initial release.
2 Submit Documentation Feedback
Product Folder Links: CSD19506KTT
Copyright © 2016, Texas Instruments Incorporated


Features .
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