CSD19505KCS

CSD19505KCS SLPS480C – JANUARY 2014 – REVISED APRIL 2024 CSD19505KCS 80V N-Channel NexFET™ Power MOSFET RDS(on) - On-State Resistance (mΩ) VGS - Gate-to-Source Voltage (V) 1 Features Ultra-low Qg and Qgd Low thermal resistance Avalanche rated Pb-free terminal plating RoHS compliant Halogen Free TO-220 plastic package 2 Applications Secondary side synchronous rectifier Motor control 3 Description This 80 V, 2.6 mΩ, TO-220 NexFET™ power MOSFET is designed to minimize losses in power conversion applications. Drain (Pin 2) Gate (Pin 1) Source (Pin 3) 10 9 TC = 25°C, ID = 100A TC = 125°C, ID = 100A 8 7 6 5 4 3 2 1 0 0 2 4 6 8 10 12 14 16 18 20 VGS - Gate-to- Source Voltage (V) G001 RDS(on) vs VGS Product Summary TA = 25°C TYPICAL VALUE VDS Drain-to-Source Voltage 80 Qg Gate Charge Total (10V) 76 Qgd Gate Charge Gate to Drain 11 RDS(on) Drain-to-Source On-Resistance VGS = 6V VGS = 10V 2.9 2.6 VGS(th) Threshold Voltage 2.6 UNIT V nC nC mΩ mΩ V Device Ordering Information(1) Package Media Qty Ship CSD19505KCS TO-220 Plastic Package Tube 50 Tube (1) For all available packages, see the orderable addendum at the end of the data sheet. Absolute Maximum Ratings TA = 25°C VDS Drain-to-Source Voltage VGS Gate-to-Source Voltage Continuous Drain Current (Package limited) VALUE 80 ±20 150 Continuous Drain Current (Silicon limited), ID TC = 25°C Continuous Drain Current (Silicon limited), TC = 100°C IDM Pulsed Drain Current...