FJAF4310 Transistor Datasheet

FJAF4310 Datasheet, PDF, Equivalent


Part Number

FJAF4310

Description

NPN Epitaxial Silicon Transistor

Manufacture

Fairchild Semiconductor

Total Page 5 Pages
Datasheet
Download FJAF4310 Datasheet


FJAF4310
October 2009
FJAF4310
NPN Epitaxial Silicon Transistor
Features
• Audio Power Amplifier
• High Current Capability : IC=10A
• High Power Dissipation
• Wide S.O.A
• Complement to FJAF4210
Absolute Maximum Ratings* TA=25°C unless otherwise noted
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
RθJC
TJ
TSTG
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Base Current (DC)
Collector Dissipation (TC=25°C)
Junction to Case
Junction Temperature
Storage Temperature
1 TO-3PF
1.Base 2.Collector 3.Emitter
Value
200
140
6
10
1.5
80
1.48
150
- 55 ~ 150
Units
V
V
V
A
A
W
°C/W
°C
°C
Electrical Characteristics TA=25°C unless otherwise noted
Symbol
Parameter
Test Condition
BVCBO
BVCEO
BVEBO
ICBO
IEBO
hFE
VCE(sat)
Cob
fT
Collector-Base Breakdown Voltage IC=5mA, IE=0
Collector-Emitter Breakdown Voltage IC=50mA, RBE=
Emitter-Base Breakdown Voltage IE=5mA, IC=0
Collector Cut-off Current
VCB=200V, IE=0
Emitter Cut-off Current
VEB=6V, IC=0
* DC Current Gain
VCE=4V, IC=3A
Collector-Emitter Saturation Voltage IC=5A, IB=0.5A
Output Capacitance
VCB=10V, f=1MHz
Current Gain Bandwidth Product
VCE=5V, IC=1A
* Pulse Test : PW=20μs
Min.
200
140
6
50
Typ.
250
30
Max.
10
10
180
0.5
Units
V
V
V
μA
μA
V
pF
MHz
hFE Classification
Classification
hFE
R
50 ~ 100
O
70 ~ 140
Y
90 ~ 180
© 2009 Fairchild Semiconductor Corporation
FJAF4310 Rev. B0
1
www.fairchildsemi.com

FJAF4310
Typical Perpormance Characteristics
10
IB = 400mA
9
8
7
6
5
4
3
2
1
0
01
IB = 300mA IB = 250mA
IB = 200mA
IB = 150mA
IB = 100mA
I = 50mA
B
IB = 20mA
234
VCE [V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characterstic
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0.0
I = 5A
C
0.4 0.8
1.2
I = 10A
C
1.6 2.0
I [A], BASE CURRENT
B
Figure 3. VCE(sat) vs. IB Characteristics
10
V =4V
CE
8
6
Ta = 25 oC
4
2 Ta = 125 oC
0
0.0 0.5
Ta = - 25 oC
1.0
1.5
V [V], Base-Emitter On VOLTAGE
BE
Figure 5. Base-Emitter On Voltage
1000
Ta = 125 oC
Ta = 25 oC
100
Ta = - 25 oC
VCE = 4 V
10
0.1 1 10
IC [A], COLLECTOR CURRENT
Figure 2. DC current Gain
1
IC = 10 IB
Ta = 125 oC
0.1
Ta = 25 oC
Ta = - 25 oC
0.01
0.01
0.1 1
IC [A], COLLECTOR CURRENT
10
Figure 4. Collector-Emitter Saturation Voltage
I (Pulse)
C
10
I (DC)
C
t=100ms
t=10ms
1
0.1
0.1
T =25oC
C
Single Pulse
1 10
V [V], COLLECTOR-EMITTER VOLTAGE
CE
100
Figure 6. Forward Bias Safe Operating Area
© 2009 Fairchild Semiconductor Corporation
FJAF4310 Rev. B0
2
www.fairchildsemi.com


Features FJAF4310 — NPN Epitaxial Silicon Trans istor October 2009 FJAF4310 NPN Epita xial Silicon Transistor Features • A udio Power Amplifier • High Current C apability : IC=10A • High Power Dissi pation • Wide S.O.A • Complement to FJAF4210 Absolute Maximum Ratings* TA =25°C unless otherwise noted Symbol V CBO VCEO VEBO IC IB PC RθJC TJ TSTG P arameter Collector-Base Voltage Collect or-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Base Current (D C) Collector Dissipation (TC=25°C) Jun ction to Case Junction Temperature Stor age Temperature 1 TO-3PF 1.Base 2.Coll ector 3.Emitter Value 200 140 6 10 1.5 80 1.48 150 - 55 ~ 150 Units V V V A A W °C/W °C °C Electrical Character istics TA=25°C unless otherwise noted Symbol Parameter Test Condition BVC BO BVCEO BVEBO ICBO IEBO hFE VCE(sat) C ob fT Collector-Base Breakdown Voltage IC=5mA, IE=0 Collector-Emitter Breakd own Voltage IC=50mA, RBE=∞ Emitter-B ase Breakdown Voltage IE=5mA, IC=0 Collector Cut-off Current VCB=200V, IE=0 Emitt.
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