IMZ120R060M1H MOSFET Datasheet

IMZ120R060M1H Datasheet, PDF, Equivalent


Part Number

IMZ120R060M1H

Description

1200V SiC Trench MOSFET

Manufacture

Infineon

Total Page 17 Pages
Datasheet
Download IMZ120R060M1H Datasheet


IMZ120R060M1H
IMZ120R060M1H
IMZ120R060M1H
CoolSiC™ 1200V SiC Trench MOSFET
Silicon Carbide MOSFET
Features
Very low switching losses
Threshold-free on state characteristic
Benchmark gate threshold voltage, VGS(th) = 4.5V
0V turn-off gate voltage for easy and simple gate drive
Fully controllable dV/dt
Robust body diode for hard commutation
Temperature independent turn-off switching losses
Sense pin for optimized switching performance
Gate
pin 4
Sense
pin 3
Drain
pin 1
Source
pin 2
Benefits
Efficiency improvement
Enabling higher frequency
Increased power density
Cooling effort reduction
Reduction of system complexity and cost
Potential applications
Energy generation
o Solar string inverter and solar optimizer
Industrial power supplies
o Industrial UPS
o Industrial SMPS
Infrastructure Charge
o Charger
Product validation
Qualified for industrial applications according to the relevant tests of JEDEC 47/20/22
Note:
the source and sense pins are not exchangeable, their exchange might lead to malfunction
Table 1
Key Performance and Package Parameters
Type
VDS
IMZ120R060M1H 1200V
ID
TC = 25°C, Rth(j-c,max)
36A
RDS(on)
Tvj = 25°C, ID = 13A, VGS = 18V
60
Tvj,max
175°C
Marking
12M1H060
Package
PG-TO247-4
Datasheet
Please read the Important Notice and Warnings at the end of this document
www.infineon.com
page 1 of 17
2.0
2019-08-22

IMZ120R060M1H
IMZ120R060M1H
CoolSiC™ 1200V SiC Trench MOSFET
Table of contents
T12a0b0lVe SoifCcTornentechnMtsOSFET
Features ........................................................................................................................................ 1
Benefits ......................................................................................................................................... 1
Potential applications ..................................................................................................................... 1
Product validation .......................................................................................................................... 1
Table of contents............................................................................................................................ 2
1 Maximum ratings ................................................................................................................... 3
2 Thermal resistances ............................................................................................................... 4
3 Electrical Characteristics ........................................................................................................ 5
3.1 Static characteristics...............................................................................................................................5
3.2 Dynamic characteristics..........................................................................................................................6
3.3 Switching characteristics........................................................................................................................7
4 Electrical characteristic diagrams ............................................................................................ 8
5 Package drawing...................................................................................................................14
6 Test conditions .....................................................................................................................15
Revision history.............................................................................................................................16
Datasheet
2 of 17
2.0
2019-08-22


Features IMZ120R060M1H IMZ120R060M1H CoolSiC™ 1200V SiC Trench MOSFET Silicon Carbide MOSFET Features  Very low switchin g losses  Threshold-free on state ch aracteristic  Benchmark gate thresho ld voltage, VGS(th) = 4.5V  0V turn- off gate voltage for easy and simple ga te drive  Fully controllable dV/dt Robust body diode for hard commutati on  Temperature independent turn-off switching losses  Sense pin for opt imized switching performance Gate pin 4 Sense pin 3 Drain pin 1 Source pin 2 Benefits  Efficiency improvement Enabling higher frequency  Increa sed power density  Cooling effort re duction  Reduction of system complex ity and cost Potential applications Energy generation o Solar string inve rter and solar optimizer  Industrial power supplies o Industrial UPS o Indu strial SMPS  Infrastructure – Char ge o Charger Product validation Qualif ied for industrial applications accordi ng to the relevant tests of JEDEC 47/20/22 Note: the source and sense pins are not exchangeable, .
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