FZ1800R12HE4_B9 IGBT-Module Datasheet

FZ1800R12HE4_B9 Datasheet, PDF, Equivalent


Part Number

FZ1800R12HE4_B9

Description

IGBT-Module

Manufacture

Infineon

Total Page 9 Pages
Datasheet
Download FZ1800R12HE4_B9 Datasheet


FZ1800R12HE4_B9
TechnischeInformation/TechnicalInformation
IGBT-Modul
IGBT-Module
FZ1800R12HE4_B9
IHM-BModulmitTrench/FeldstoppIGBT4undEmitterControlled4Diode
IHM-BmodulewithTrench/FieldstopIGBT4andEmitterControlled4diode
VorläufigeDaten/PreliminaryData
TypischeAnwendungen
• Hochleistungsumrichter
• Motorantriebe
ElektrischeEigenschaften
• ErweiterteSperrschichttemperaturTvjop
• NiedrigeSchaltverluste
MechanischeEigenschaften
• GehäusemitCTI>400
• HoheLeistungsdichte
• IHMBGehäuse
VCES = 1200V
IC nom = 1800A / ICRM = 3600A
TypicalApplications
• Highpowerconverters
• Motordrives
ElectricalFeatures
• ExtendedoperatingtemperatureTvjop
• Lowswitchinglosses
MechanicalFeatures
• PackagewithCTI>400
• Highpowerdensity
• IHMBhousing
ModuleLabelCode
BarcodeCode128
DMX-Code
preparedby:WB
approvedby:IB
ContentoftheCode
ModuleSerialNumber
ModuleMaterialNumber
ProductionOrderNumber
Datecode(ProductionYear)
Datecode(ProductionWeek)
Digit
1-5
6-11
12-19
20-21
22-23
dateofpublication:2015-09-29
revision:V2.4
ULapproved(E83335)
1

FZ1800R12HE4_B9
TechnischeInformation/TechnicalInformation
IGBT-Modul
IGBT-Module
FZ1800R12HE4_B9
IGBT,Wechselrichter/IGBT,Inverter
HöchstzulässigeWerte/MaximumRatedValues
Kollektor-Emitter-Sperrspannung
Collector-emittervoltage
Tvj = 25°C
Kollektor-Dauergleichstrom
ContinuousDCcollectorcurrent
TC = 100°C, Tvj max = 175°C
TC = 25°C, Tvj max = 175°C
PeriodischerKollektor-Spitzenstrom
Repetitivepeakcollectorcurrent
tP = 1 ms
Gesamt-Verlustleistung
Totalpowerdissipation
TC = 25°C, Tvj max = 175°C
Gate-Emitter-Spitzenspannung
Gate-emitterpeakvoltage
VorläufigeDaten
PreliminaryData
VCES 
IC nom
IC

ICRM 
Ptot 
VGES 
1200
1800
2735
3600
11,0
+/-20
V

A
A
A
 kW
V
CharakteristischeWerte/CharacteristicValues
Kollektor-Emitter-Sättigungsspannung
Collector-emittersaturationvoltage
IC = 1800 A, VGE = 15 V
IC = 1800 A, VGE = 15 V
IC = 1800 A, VGE = 15 V
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
Gate-Schwellenspannung
Gatethresholdvoltage
IC = 68,5 mA, VCE = VGE, Tvj = 25°C
Gateladung
Gatecharge
VGE = -15 V ... +15 V
InternerGatewiderstand
Internalgateresistor
Tvj = 25°C
Eingangskapazität
Inputcapacitance
f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V
Rückwirkungskapazität
Reversetransfercapacitance
f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V
Kollektor-Emitter-Reststrom
Collector-emittercut-offcurrent
VCE = 1200 V, VGE = 0 V, Tvj = 25°C
Gate-Emitter-Reststrom
Gate-emitterleakagecurrent
VCE = 0 V, VGE = 20 V, Tvj = 25°C
Einschaltverzögerungszeit,induktiveLast
Turn-ondelaytime,inductiveload
IC = 1800 A, VCE = 600 V
VGE = ±15 V
RGon = 1,8
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
Anstiegszeit,induktiveLast
Risetime,inductiveload
IC = 1800 A, VCE = 600 V
VGE = ±15 V
RGon = 1,8
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
Abschaltverzögerungszeit,induktiveLast
Turn-offdelaytime,inductiveload
IC = 1800 A, VCE = 600 V
VGE = ±15 V
RGoff = 0,3
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
Fallzeit,induktiveLast
Falltime,inductiveload
IC = 1800 A, VCE = 600 V
VGE = ±15 V
RGoff = 0,3
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
EinschaltverlustenergieproPuls
Turn-onenergylossperpulse
IC = 1800 A, VCE = 600 V, LS = 50 nH
Tvj = 25°C
VGE = ±15 V, di/dt = 6300 A/µs (Tvj = 150°C) Tvj = 125°C
RGon = 1,8
Tvj = 150°C
AbschaltverlustenergieproPuls
Turn-offenergylossperpulse
IC = 1800 A, VCE = 600 V, LS = 50 nH
Tvj = 25°C
VGE = ±15 V, du/dt = 2750 V/µs (Tvj = 150°C)Tvj = 125°C
RGoff = 0,3
Tvj = 150°C
Kurzschlußverhalten
SCdata
VGE 15 V, VCC = 800 V
VCEmax = VCES -LsCE ·di/dt
tP 10 µs, Tvj = 150°C
Wärmewiderstand,ChipbisGehäuse
Thermalresistance,junctiontocase
proIGBT/perIGBT
Wärmewiderstand,GehäusebisKühlkörper proIGBT/perIGBT
Thermalresistance,casetoheatsink
λPaste=1W/(m·K)/λgrease=1W/(m·K)
TemperaturimSchaltbetrieb
Temperatureunderswitchingconditions
VCE sat
min. typ. max.
1,75 2,10
2,00
2,05
V
V
V
VGEth 5,20 5,80 6,40 V
QG 14,0 µC
RGint
1,1
Cies 110 nF
Cres 6,20 nF
ICES 5,0 mA
IGES
td on
tr
td off
tf
Eon
Eoff
ISC
RthJC
400 nA
0,40 µs
0,43 µs
0,43 µs
0,28 µs
0,29 µs
0,29 µs
0,87 µs
0,97 µs
1,00 µs
0,14 µs
0,14 µs
0,16 µs
245 mJ
330 mJ
355 mJ
245 mJ
290 mJ
310 mJ
7200
A
13,9 K/kW
RthCH
9,00 K/kW
Tvj op
-40
150 °C
preparedby:WB
approvedby:IB
dateofpublication:2015-09-29
revision:V2.4
2


Features TechnischeInformation/TechnicalInfor mation IGBT-Modul IGBT-Module FZ1800R 12HE4_B9 IHM-BModulmitTrench/Feldst oppIGBT4undEmitterControlled4Diod e IHM-BmodulewithTrench/FieldstopIG BT4andEmitterControlled4diode Vorl äufigeDaten/PreliminaryData Typis cheAnwendungen • Hochleistungsumrich ter • Motorantriebe ElektrischeEigen schaften • ErweiterteSperrschichttem peraturTvjop • NiedrigeSchaltverlu ste MechanischeEigenschaften • Gehä usemitCTI>400 • HoheLeistungsdic hte • IHMBGehäuse VCES = 1200V IC nom = 1800A / ICRM = 3600A TypicalApp lications • Highpowerconverters • Motordrives ElectricalFeatures • E xtendedoperatingtemperatureTvjop Lowswitchinglosses MechanicalFeatu res • PackagewithCTI>400 • High powerdensity • IHMBhousing Modul eLabelCode BarcodeCode128 DMX-Cod e preparedby:WB approvedby:IB Cont entoftheCode ModuleSerialNumber Mo duleMaterialNumber ProductionOrderNumber Datecode(ProductionYear) Datecode(ProductionW.
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