H2N60P

2A, 600V, N 2N60 Series N-Channel MOSFET FQP2N60C FQPF2N60C H H2N60P H2N60F 2N60 HAOHAI P: TO-220AB F: TO-220FP 50Pcs 1000Pcs 5000Pcs 　■APPLICATION 　　ELECTRONIC BALLAST 　　ELECTRONIC TRANSFORMER 　　SWITCH MODE POWER SUPPLY 　■FEATURES 　　LOW ON-RESISTANCE 　　FAST SWITCHING 　　HIGH INPUT RESISTANCE 　　RoHS COMPLIANT 　　Package: TO-220AB & TO-220F ID=2A BVDSS=600V RDS(on)=4.2Ω 　■ 　■、、、RoHS 　■ 　　、LCD、LED、、UPS、 　　、、、、、、 　　、、 　■ 　■TO-220AB TO-220P（） 　　TO-220F TO-220FP（） ■ 　Absolute Maximum Ratings（TC=25℃） PARAMETER -　Drain-source Voltage -　gate-source Voltage 　Continuous Drain Current８ TC=25℃ TC=100℃ 　Drain Current －Pulsed 　① 　Power Dissipation TO-220P TO-220F 　Junction Temperature 　Storage Temperature 　Single Pulse Avalanche Energy　② 　 * 　 (*Drain current limited by maximum junction temperature) 2N60 Series Pin Assignment 3-Lead Plastic TO-220AB Package Code: P Pin 1: Gate Pin 2 & Tab: Drain Pin 3: Source 3-Lead Plastic TO-220FP Package Code: F Pin 1: Gate Pin 2: Drain Pin 3: Source 2D Series Symbol: 1 G 3S SYMBOL VDS VGS ID IDM Ptot Tj TSTG EAS VALUE 600 ±30 2.0 * 1.25 * 8.0 * 54 23 150 -55~+150 120 UNIT V A W ℃ mJ http://www.szhhe.com HAOHAI ELECTRONICS CO., LTD. 1　6 kkg@kkg.com.cn 2N60C-PF-EDC 2A, 600V, N 2N60 Series N-Channel MOSFET ■ 　Electronic Characteristics（TC=25℃） PARAMETER SYMBOL - Drain-source Breakdown Voltage BVDSS Breakdown Voltage Temperature Coefficient ΔBVDSS/ΔTj Gate Threshold Voltage VGS(TH) ...