H2N60P MOSFET Datasheet

H2N60P Datasheet, PDF, Equivalent


Part Number

H2N60P

Description

N-Channel MOSFET

Manufacture

HAOHAI

Total Page 6 Pages
Datasheet
Download H2N60P Datasheet


H2N60P
2A, 600V, N沟道 场效应晶体管 产品参数规格书
2N60 Series
N-Channel MOSFET
工业型号
FQP2N60C
FQPF2N60C
公司型号 通俗命名
H
H2N60P
H2N60F
2N60
HAOHAI
封装标识
P: TO-220AB
F: TO-220FP
包装方式
每管数量
每盒数量
条管装
盒装箱装
50Pcs
1000Pcs
每箱数量
5000Pcs
 ■APPLICATION
  ELECTRONIC BALLAST
  ELECTRONIC TRANSFORMER
  SWITCH MODE POWER SUPPLY
 ■FEATURES
  LOW ON-RESISTANCE
  FAST SWITCHING
  HIGH INPUT RESISTANCE
  RoHS COMPLIANT
  Package: TO-220AB & TO-220F
ID=2A
BVDSS=600V
RDS(on)=4.2
 ■特点
 ■导通电阻低、开关速度快、输入阻抗高、符合RoHS规范
 ■应用范围
  开关电源、LCD电源、LED驱动电源、机箱电源、UPS电源、
  各种充电器、电子整流器、电子变压器、逆变器、控制器、转换器、
  风扇控制板、以及电源适配器、汽车稳压器等线性放大和功率开关电路
 ■封装形式
 ■TO-220AB TO-220P(半塑封)
  TO-220F TO-220FP(全塑封)
最大额定 Absolute Maximum RatingsTC=25℃)
参数
PARAMETER
-源电压 Drain-source Voltage
-源电压 gate-source Voltage
漏极电流 Continuous Drain Current
TC=25
TC=100
最大脉冲电流 Drain Current Pulsed  ①
耗散功率 Power Dissipation
TO-220P
TO-220F
最高结温 Junction Temperature
存储温度 Storage Temperature
单脉冲雪崩能量 Single Pulse Avalanche Energy ②
  * 漏极电流由最高结温限制  (*Drain current limited by maximum junction temperature)
2N60 Series Pin Assignment
3-Lead Plastic TO-220AB
Package Code: P
Pin 1: Gate
Pin 2 & Tab: Drain
Pin 3: Source
3-Lead Plastic TO-220FP
Package Code: F
Pin 1: Gate
Pin 2: Drain
Pin 3: Source
2D
Series Symbol: 1 G
3S
符号
SYMBOL
VDS
VGS
ID
IDM
Ptot
Tj
TSTG
EAS
额定值
VALUE
600
±30
2.0 *
1.25 *
8.0 *
54
23
150
-55~+150
120
单位
UNIT
V
A
W
mJ
http://www.szhhe.com
HAOHAI ELECTRONICS CO., LTD.
1页 共6
致力於中國功率器件優秀供應商
kkg@kkg.com.cn
2N60C-PF-EDC

H2N60P
2A, 600V, N沟道 场效应晶体管 产品参数规格书
2N60 Series
N-Channel MOSFET
电特性 Electronic CharacteristicsTC=25℃)
参数
PARAMETER
符号
SYMBOL
-源击穿电压
Drain-source Breakdown Voltage
BVDSS
击穿电压温度系数
Breakdown Voltage Temperature Coefficient
ΔBVDSS/ΔTj
栅极开启电压
Gate Threshold Voltage
VGS(TH)
-源漏电流
Drain-source Leakage Current
IDSS
跨导
Forward Transconductance
gFS
测试条件
TEST CONDITION
VGS=0V
ID=250μA
ID=250uA
Referenced to 25
VGS=VDS
ID=250μA
VDS=600V
VGS=0V, Tj=25
VDS=480V
VGS=0V, Tj=125
VDS=40V
ID=1A ③
最小值 典型值 最大值
MIN TYP MAX
单位
UNIT
600 V
0.6 V/
2.0 4.0 V
25
μA
250
1.5 S
订货方式 ORDERING INFORMATION
包装方式
PACKING
TO-220P 条管装 TUBE PACKING
TO-220F 条管装 TUBE PACKING
订货方式 ORDERING CODE
普通塑封料
Nomal Package Material
无卤塑封料
Halogen Free
H2N60P-TU
H2N60F-TU
H2N60P-TU-PbF
H2N60F-TU-PbF
包装规格 Packing
TO-220AB
 管装,每管50只,每盒1000只,每箱5000(50Pcs/Tub, 1Kpcs/BOX, 5Kpcs/Carton)
TO-220FP
 管装,每管50只,每盒1000只,每箱5000(50Pcs/Tub, 1Kpcs/BOX, 5Kpcs/Carton)
http://www.szhhe.com
HAOHAI ELECTRONICS CO., LTD.
2页 共6
致力於中國功率器件優秀供應商
kkg@kkg.com.cn
2N60C-PF-EDC


Features 2A, 600V, N 2N60 Series N-Channel MOS FET FQP2N60C FQPF2N60C H H2N60P H2N60F 2N60 HAOHAI P: TO-220AB F: T O-220FP 50Pcs 1000Pcs 5000 Pcs  ■APPLICATION   ELECTRONIC BALLAST   ELECTRONIC TRANSFORMER  SWITCH MODE POWER SUPPLY  ■FEA TURES   LOW ON-RESISTANCE   FAS T SWITCHING   HIGH INPUT RESISTANCE   RoHS COMPLIANT   Package: TO -220AB & TO-220F ID=2A BVDSS=600V RDS( on)=4.2Ω  ■  ■、、、RoHS  ■   、LCD、LED、、UPS、   、、、、、、   、、  ■  ■TO-220AB TO-220P()  TO-220F TO-220FP() ■  Abs olute Maximum Ratings(TC=25℃) PA RAMETER - Drain-source Voltage -  gate-source Voltage  Continuous Drai n Current8 TC=25℃ TC=100℃  Dr ain Current -Pulsed  ①  Power Dissipation TO-220P TO-220F  Juncti on Temperature  Storage Temperature  Single Pulse Avalanche Energy ②   *   (*Drain current limited by maximum junction temperature) 2N60 Series Pin Assignment 3-Lead Plastic TO-220AB Package Code: P Pin 1: Gate Pin 2 & Tab: Drain Pin 3: Source 3-Lead Plastic TO-220FP Package Code: F Pin 1.
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