ADG1202

Low Capacitance, Low Charge Injection, ±15 V/+12 V iCMOS SPST in SOT-23 ADG1202 OBSOLETE 06576-001 FEATURES 2.4 pF off capacitance <1 pC charge injection Low leakage; 0.6 nA maximum @ 85°C 120 Ω on resistance Fully specified at ±15 V, +12 V No VL supply required 3 V logic-compatible inputs Rail-to-rail operation 6-lead SOT-23 package APPLICATIONS Automatic test equipment Data acquisition systems Battery-powered systems Sample-and-hold systems Audio signal routing Video signal routing Communication systems GENERAL DESCRIPTION The ADG1201/ADG1202 are monolithic complementary metal-oxide semiconductor (CMOS) devices containing an SPST switch designed in an iCMOS® (industrial CMOS) process. iCMOS is a modular manufacturing process combining high voltage CMOS and bipolar technologies. It enables the development of a wide range of high performance analog ICs capable of 33 V operation in a footprint that no previous generation of high voltage parts has been able to achieve. Unlike analog ICs using conventional CMOS processes, iCMOS components can tolerate high supply voltages while providing increased performance, dramatically lower power consumption, and reduced package size. The ultralow capacitance and charge injection of these switches make them ideal solutions for data acquisition and sample-and-hold applications, where low glitch and fast settling are required. Fast switching speed coupled with high signal bandwidth make the parts suitable for video signal switching. FUNCTI...