MBRB30H45CT Rectifier Datasheet

MBRB30H45CT Datasheet, PDF, Equivalent


Part Number

MBRB30H45CT

Description

Dual Common Cathode Schottky Rectifier

Manufacture

Vishay

Total Page 5 Pages
Datasheet
Download MBRB30H45CT Datasheet


MBRB30H45CT
www.vishay.com
MBRB30HxxCT
Vishay General Semiconductor
Dual Common Cathode Schottky Rectifier
High Barrier Technology for Improved High Temperature Performance
D2PAK (TO-263AB)
K
2
1
MBRB30HxxCT
PIN 1
PIN 2
K
HEATSINK
PRIMARY CHARACTERISTICS
IF(AV)
VRRM
IFSM
VF
IR
TJ max.
Package
2 x 15 A
45 V, 60 V
150 A
0.56 V, 0.59 V
80 μA, 60 μA
175 °C
D2PAK (TO-263AB)
Circuit configuration
Common cathode
FEATURES
• Power pack
• Guardring for overvoltage protection
• Lower power losses, high efficiency
• Low forward voltage drop
• Low leakage current
• High forward surge capability
• High frequency operation
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 245 °C
• AEC-Q101 qualified available
- Automotive ordering code: base P/NHE3_A
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in low voltage, high frequency rectifier of switching
mode power supplies, freewheeling diodes, DC/DC
converters, or polarity protection application.
MECHANICAL DATA
Case: D2PAK (TO-263AB)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Base P/NHE3_X - RoHS-compliant, AEC-Q101 qualified
(“_X” denotes revision code, e.g. A, B, ...)
Terminals: matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
Polarity: as marked
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Maximum repetitive peak reverse voltage
Working peak reverse voltage
Maximum DC blocking voltage
Maximum average forward rectified current (fig. 1)
total device
per diode
VRRM
VRWM
VDC
IF(AV)
Peak forward surge current 8.3 ms single half sine-wave superimposed
on rated load per diode
IFSM
Peak repetitive reverse surge current per diode at tp = 2 μs, 1 kHz
Peak non-repetitive reverse energy (8/20 μs waveform)
Non-repetitive avalanche energy per diode at 25 °C, IAS = 4 A, L = 10 mH
Electrostatic discharge capacitor voltage human body model:
C = 100 pF, R = 1.5 k
IRRM
ERSM
EAS
VC
Voltage rate of change (rated VR)
Operating junction and storage temperature range
dV/dt
TJ, TSTG
MBRB30H45CT MBRB30H60CT
45 60
45 60
45 60
30
15
150
1.0 0.5
25 20
80
25
10 000
-65 to +175
UNIT
V
V
V
A
A
A
mJ
mJ
kV
V/μs
°C
Revision: 25-Oct-2019
1 Document Number: 87539
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

MBRB30H45CT
www.vishay.com
MBRB30HxxCT
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS SYMBOL MBRB30H45CT
Maximum instantaneous forward voltage
per diode
Maximum reverse current per diode at
working peak reverse voltage
IF = 15 A
IF = 15 A
IF = 30 A
IF = 30 A
TC = 25 °C
TC = 125 °C
TC = 25 °C
TC = 125 °C
TJ = 25 °C
TJ = 125 °C
VF (1)
IR (2)
-
0.49
-
0.62
-
5.0
0.62
0.56
0.73
0.67
80
15
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: pulse width 40 ms
MBRB30H60CT
- 0.68
0.55 0.59
- 0.83
0.68 0.71
- 60
4.0 15
UNIT
V
μA
mA
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Typical thermal resistance junction to case per diode
RJC
MBRB
1.5
UNIT
°C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N
UNIT WEIGHT (g)
TO-263AB
MBRB30H45CT-E3/45
1.35
TO-263AB
MBRB30H45CT-E3/81
1.35
TO-263AB
MBRB30H45CTHE3_B/P (1)
1.35
TO-263AB
MBRB30H45CTHE3_B/I (1)
1.35
Notes
(1) AEC-Q101 qualified
PACKAGE CODE
45
81
P
I
BASE QUANTITY
50/tube
800/reel
50/tube
800/reel
DELIVERY MODE
Tube
Tape and reel
Tube
Tape and reel
Revision: 25-Oct-2019
2 Document Number: 87539
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Features www.vishay.com MBRB30HxxCT Vishay Gener al Semiconductor Dual Common Cathode S chottky Rectifier High Barrier Technolo gy for Improved High Temperature Perfor mance D2PAK (TO-263AB) K 2 1 MBRB30H xxCT PIN 1 PIN 2 K HEATSINK PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF IR TJ max. Package 2 x 15 A 45 V, 60 V 1 50 A 0.56 V, 0.59 V 80 μA, 60 μA 175 °C D2PAK (TO-263AB) Circuit configura tion Common cathode FEATURES • Powe r pack • Guardring for overvoltage pr otection • Lower power losses, high e fficiency • Low forward voltage drop • Low leakage current • High forwar d surge capability • High frequency o peration • Meets MSL level 1, per J-S TD-020, LF maximum peak of 245 °C • AEC-Q101 qualified available - Autom otive ordering code: base P/NHE3_A • Material categorization: for definition s of compliance please see www.vishay.c om/doc?99912 TYPICAL APPLICATIONS For u se in low voltage, high frequency recti fier of switching mode power supplies, freewheeling diodes, DC/DC converters, or polarity.
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