IRF9Z10 MOSFET Datasheet

IRF9Z10 Datasheet, PDF, Equivalent


Part Number

IRF9Z10

Description

Power MOSFET

Manufacture

Vishay

Total Page 8 Pages
Datasheet
Download IRF9Z10 Datasheet


IRF9Z10
Power MOSFET
IRF9Z10, SiHF9Z10
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
Qg (Max.) (nC)
Qgs (nC)
Qgd (nC)
Configuration
- 60
VGS = - 10 V
12
3.8
5.1
Single
0.50
TO-220AB
S
G
S
D
G
D
P-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
FEATURES
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• P-Channel
• 175 °C Operating Temperature
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Compliant to RoHS Directive 2002/95/EC
Available
RoHS*
COMPLIANT
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The TO-220AB package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 W. The low thermal resistance
and low package cost of the TO-220AB contribute to its
wide acceptance throughout the industry.
TO-220AB
IRF9Z10PbF
SiHF9Z10-E3
IRF9Z10
SiHF9Z10
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Currenta
VGS at - 10 V
TC = 25 °C
TC = 100 °C
VGS
ID
IDM
Linear Derating Factor
Single Pulse Avalanche Energyb
Repetitive Avalanche Currenta
Repetitive Avalanche Energya
EAS
IAR
EAR
Maximum Power Dissipation
Peak Diode Recovery dV/dtc
TC = 25 °C
PD
dV/dt
Operating Junction and Storage Temperature Range
TJ, Tstg
Soldering Recommendations (Peak Temperature)
for 10 s
Mounting Torque
6-32 or M3 screw
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = - 25 V, starting TJ = 25 °C, L = 6.23 mH, Rg = 25 , IAS = - 6.7 A (see fig. 12).
c. ISD - 6.7 A, dI/dt 90 A/μs, VDD VDS, TJ 175 °C.
d. 1.6 mm from case.
LIMIT
- 60
± 20
- 6.7
- 4.7
- 27
0.29
140
- 6.7
4.3
43
- 4.5
- 55 to + 175
300d
10
1.1
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
lbf · in
N·m
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 90118
S11-0511-Rev. B, 21-Mar-11
www.vishay.com
1
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRF9Z10
IRF9Z10, SiHF9Z10
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
Maximum Junction-to-Ambient
Case-to-Sink, Flat, Greased Surface
RthJA
RthCS
Maximum Junction-to-Case (Drain)
RthJC
TYP.
-
0.50
-
MAX.
62
-
3.5
UNIT
°C/W
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
VDS
VDS/TJ
VGS(th)
IGSS
IDSS
RDS(on)
gfs
VGS = 0 V, ID = - 250 μA
Reference to 25 °C, ID = - 1 mA
VDS = VGS, ID = - 250 μA
VGS = ± 20 V
VDS = - 60 V, VGS = 0 V
VDS = - 48 V, VGS = 0 V, TJ = 150 °C
VGS = - 10 V
ID = - 4.0 Ab
VDS = - 25 V, ID = - 4.0 Ab
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VGS = 0 V,
VDS = - 25 V,
f = 1.0 MHz, see fig. 5
VGS = - 10 V
ID = - 6.7 A, VDS = - 48 V,
see fig. 6 and 13b
VDD = - 30 V, ID = - 6.7 A,
Rg = 24 , RD = 4.0, see fig. 10b
Internal Drain Inductance
LD
Internal Source Inductance
Drain-Source Body Diode Characteristics
LS
Between lead,
6 mm (0.25") from
package and center of
die contact
D
G
S
MIN.
- 60
-
- 2.0
-
-
-
-
1.4
-
-
-
-
-
-
-
-
-
-
-
-
TYP. MAX.
-
- 0.060
-
-
-
-
-
-
-
-
- 4.0
± 100
- 100
- 500
0.50
-
270 -
170 -
31 -
- 12
- 3.8
- 5.1
11 -
63 -
10 -
31 -
4.5 -
7.5 -
UNIT
V
V/°C
V
nA
μA
S
pF
nC
ns
nH
Continuous Source-Drain Diode Current
Pulsed Diode Forward Currenta
IS MOSFET symbol
showing the
integral reverse
ISM p - n junction diode
D
G
S
- - - 6.7
A
- - - 27
Body Diode Voltage
VSD
TJ = 25 °C, IS = - 6.7 A, VGS = 0 Vb
-
-
- 5.5
V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
trr
TJ = 25 °C, IF = - 6.7 A, dI/dt = 100 A/μsb
-
80 160 ns
Qrr - 0.096 0.19 μC
Forward Turn-On Time
ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width 300 μs; duty cycle 2 %.
www.vishay.com
2
Document Number: 90118
S11-0511-Rev. B, 21-Mar-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Features Power MOSFET IRF9Z10, SiHF9Z10 Vishay S iliconix PRODUCT SUMMARY VDS (V) RDS( on) () Qg (Max.) (nC) Qgs (nC) Qgd ( nC) Configuration - 60 VGS = - 10 V 12 3.8 5.1 Single 0.50 TO-220AB S G S D G D P-Channel MOSFET ORDERING INF ORMATION Package Lead (Pb)-free SnPb F EATURES • Dynamic dV/dt Rating • Re petitive Avalanche Rated • P-Channel • 175 °C Operating Temperature • F ast Switching • Ease of Paralleling Simple Drive Requirements • Compli ant to RoHS Directive 2002/95/EC Avail able RoHS* COMPLIANT DESCRIPTION Third generation Power MOSFETs from Vishay p rovide the designer with the best combi nation of fast switching, ruggedized de vice design, low on-resistance and cost -effectiveness. The TO-220AB package is universally preferred for all commerci al-industrial applications at power dis sipation levels to approximately 50 W. The low thermal resistance and low pack age cost of the TO-220AB contribute to its wide acceptance throughout the industry. TO-220AB IRF9Z10PbF SiHF9Z10-E3 IRF9.
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