SiHF9Z10

Power MOSFET IRF9Z10, SiHF9Z10 Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration - 60 VGS = - 10 V 12 3.8 5.1 Single 0.50 TO-220AB S G S D G D P-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free SnPb FEATURES Dynamic dV/dt Rating Repetitive Avalanche Rated P-Channel 175 °C Operating Temperature Fast Switching Ease of Paralleling Simple Drive Requirements Compliant to RoHS Directive 2002/95/EC Available RoHS* COMPLIANT DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry. TO-220AB IRF9Z10PbF SiHF9Z10-E3 IRF9Z10 SiHF9Z10 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current Pulsed Drain Currenta VGS at - 10 V TC = 25 °C TC = 100 °C VGS ID IDM Linear Derating Factor Single Pulse Avalanche Energyb Repetitive Avalanche Currenta Repetitive Avalanche Energya EAS IAR EAR Maximum Power Dissipation Peak Diode Recovery dV/dtc TC = 25 °C PD dV/dt Operating Junction and Storage Temperature Range TJ, ...