IRF6150 MOSFET Datasheet

IRF6150 Datasheet, PDF, Equivalent


Part Number

IRF6150

Description

Power MOSFET

Manufacture

International Rectifier

Total Page 3 Pages
Datasheet
Download IRF6150 Datasheet


IRF6150
OBSOLETE
l Ultra Low RSS(on) per Footprint Area
l Low Thermal Resistance
l Bi-Directional P-Channel Switch
l Super Low Profile (<.8mm)
l Available Tested on Tape & Reel
VSS
-20V
PD - 93943
IRF6150
HEXFET® Power MOSFET
RSS(on) max
0.036@VGS1,2 = -4.5V
0.052@VGS1,2 = -2.5V
IS
-7.9A
-6.3A
Description
True chip-scale packaging is available from International
Rectifier. Through the use of advanced processing tech-
niques and a unique packaging concept, extremely low
on-resistance and the highest power densities in the
industry have been made available for battery and load
management applications. These benefits, combined with
the ruggedized device design that International Rectifier
is well known for, provides the designer with an ex-
tremely efficient and reliable device.
The FlipFET™ package, is one-third the footprint of a
comparable SO-8 package and has a profile of less than
.8mm. Combined with the low thermal resistance of the
die level device, this makes the FlipFET™ the best device
for applications where printed circuit board space is at a
premium and in extremely thin application environments
such as battery packs, cell phones and PCMCIA cards.
6
*
Absolute Maximum Ratings
VSS
IS @ TC = 25°C
IS @ TC = 70°C
ISM
PD @TC = 25°C
PD @TC = 70°C
VGS
TJ, TSTG
Parameter
Source- Source Voltage
Continuous Current, VGS1 = VGS2 = -4.5V
Continuous Current, VGS1 = VGS2 = -4.5V
Pulsed Current 
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
Thermal Resistance
Symbol
RθJA
RθJ-PCB
www.irf.com
Parameter
Junction-to-Ambientƒ
Junction-to-PCB mounted
6
*
Max.
-20
±7.9
±6.3
±40
3.0
1.9
24
± 12
-55 to + 150
Typ.
17
Max.
42
–––
Units
V
A
W
mW/°C
V
°C
Units
°C/W
1
07/26/04

IRF6150
IRF6150
OBSOLETE
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)SSS
Source-to-Source Breakdown Voltage
V(BR)SSS/TJ Breakdown Voltage Temp. Coefficient
RSS(on)
Static Source-to-Source On-Resistance
VGS(th)
gfs
ISSS
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Source Current
IGSS
Qg
Qgs
QG1-S2
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Miller Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
-20 ––– –––
––– -TBD –––
––– ––– 0.036
––– ––– 0.052
-0.45 ––– -1.2
TBD ––– –––
––– ––– -1.0
––– ––– -25
––– ––– 100
––– ––– -100
––– TBD TBD
––– TBD TBD
––– TBD TBD
––– TBD –––
––– TBD –––
––– TBD –––
––– TBD –––
––– TBD –––
––– TBD –––
––– TBD –––
V
V/°C
V
S
µA
nA
nC
ns
pF
VGS = 0V, ID = -250µA
Reference to 25°C, ID = -1mA
VGS1 = VGS2 = -4.5V, IS = -7.9A ‚
VGS1 = VGS2 = -2.5V, IS = -6.3A ‚
VSS = VGS, IS = -250µA
VSS = -10V, IS = -7.9A
VSS = -20V, VGS = 0V
VSS = -16V, VGS = 0V, TJ = 125°C
VGS = 12V
VGS = -12V
IS = -TBDA
VSS = -16V
VGS = -5.0V„
VSS = -10V
IS = -1.0A
RG = 6.0
VGS = -5.0V „
VGS = 0V
VSS = -15V
ƒ = 1.0MHz
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature.
‚ Pulse width 400µs; duty cycle 2%. Gate voltage applied to both gates.
ƒ When mounted on 1 inch square 2oz copper on FR-4
2 www.irf.com


Features OBSOLETE l Ultra Low RSS(on) per Footpr int Area l Low Thermal Resistance l Bi- Directional P-Channel Switch l Super Lo w Profile (<.8mm) l Available Tested on Tape & Reel VSS -20V PD - 93943 IRF 6150 HEXFET® Power MOSFET RSS(on) ma x 0.036Ω@VGS1,2 = -4.5V 0.052Ω@VGS1 ,2 = -2.5V IS -7.9A -6.3A Description True chip-scale packaging is available from International Rectifier. Through the use of advanced processing techniqu es and a unique packaging concept, extr emely low on-resistance and the highest power densities in the industry have b een made available for battery and load management applications. These benefit s, combined with the ruggedized device design that International Rectifier is well known for, provides the designer w ith an extremely efficient and reliable device. The FlipFET™ package, is one- third the footprint of a comparable SO- 8 package and has a profile of less tha n .8mm. Combined with the low thermal r esistance of the die level device, this makes the FlipFET™ the best d.
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