IRF6150

OBSOLETE l Ultra Low RSS(on) per Footprint Area l Low Thermal Resistance l Bi-Directional P-Channel Switch l Super Low Profile (<.8mm) l Available Tested on Tape & Reel VSS -20V PD - 93943 IRF6150 HEXFET® Power MOSFET RSS(on) max 0.036Ω@VGS1,2 = -4.5V 0.052Ω@VGS1,2 = -2.5V IS -7.9A -6.3A Description True chip-scale packaging is available from International Rectifier. Through the use of advanced processing techniques and a unique packaging concept, extremely low on-resistance and the highest power densities in the industry have been made available for battery and load management applications. These benefits, combined with the ruggedized device design that International Rectifier is well known for, provides the designer with an extremely efficient and reliable device. The FlipFET™ package, is one-third the footprint of a comparable SO-8 package and has a profile of less than .8mm. Combined with the low thermal resistance of the die level device, this makes the FlipFET™ the best device for applications where printed circuit board space is at a premium and in extremely thin application environments such as battery packs, cell phones and PCMCIA cards. 6 * Absolute Maximum Ratings VSS IS @ TC = 25°C IS @ TC = 70°C ISM PD @TC = 25°C PD @TC = 70°C VGS TJ, TSTG Parameter Source- Source Voltage Continuous Current, VGS1 = VGS2 = -4.5V Continuous Current, VGS1 = VGS2 = -4.5V Pulsed Current  Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage J...