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S8650

HAMAMATSU

Si PIN photodiode

Si PIN photodiode S8650 Flat surface ideal for bonding to scintillator The S8650 Si PIN photodiode has an epoxy coatin...


HAMAMATSU

S8650

File Download Download S8650 Datasheet


Description
Si PIN photodiode S8650 Flat surface ideal for bonding to scintillator The S8650 Si PIN photodiode has an epoxy coating window processed to have a flat surface (flatness: ±5 μm). When bonded to a scintillator, the flat surface allows highly tight coupling to the scintillator so bubbles are unlikely to penetrate in between. We also accept special orders for machining flat surfaces on other ceramic package products. Feel free to place an order with us. Features Flat epoxy coating surface ideal for bonding to scintillator Flatness: ±5 μm Photosensitive area: 10 × 10 mm Applications Scintillation X-ray detectors Calorimeters, etc. Absolute maximum ratings (Ta=25 °C) Parameter Reverse voltage Operating temperature Storage temperature Symbol VR Max. Topr Tstg Value 100 -20 to +60 -20 to +80 Unit V °C °C Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the product within the absolute maximum ratings. Electrical and optical characteristics (Ta=25 °C) Parameter Spectral response range Peak sensitivity wavelength Photosensitivity Dark current Cutoff frequency Terminal capacitance Noise equivalent power Symbol λ λp S ID fc Ct NEP Condition λ=λp BGO: λ=480 nm CsI (Tl): λ=540 nm VR=70 V λ=780 nm, VR=70 V RL=50 Ω, -3 dB VR=70 V, f=1 MHz VR=70 V, λ=λp Min. - - - Typ. 340 to 1100 960 0.66 0.30 0.37 2 40 40 3.8 × 10-14 Max. 6 - - Unit nm nm A/W A/W A/W nA MHz pF W/Hz1/2 www.hamamatsu.com 1 Photosensitivit...




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