S8650 photodiode Datasheet

S8650 Datasheet, PDF, Equivalent


Part Number

S8650

Description

Si PIN photodiode

Manufacture

HAMAMATSU

Total Page 3 Pages
Datasheet
Download S8650 Datasheet


S8650
Si PIN photodiode
S8650
Flat surface ideal for bonding to scintillator
The S8650 Si PIN photodiode has an epoxy coating window processed to have a at surface (atness: ±5 μm). When
bonded to a scintillator, the at surface allows highly tight coupling to the scintillator so bubbles are unlikely to penetrate in
between.
We also accept special orders for machining at surfaces on other ceramic package products. Feel free to place an order
with us.
Features
Flat epoxy coating surface ideal for bonding to scintillator
Flatness: ±5 μm
Photosensitive area: 10 × 10 mm
Applications
Scintillation X-ray detectors
Calorimeters, etc.
Absolute maximum ratings (Ta=25 °C)
Parameter
Reverse voltage
Operating temperature
Storage temperature
Symbol
VR Max.
Topr
Tstg
Value
100
-20 to +60
-20 to +80
Unit
V
°C
°C
Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the
product within the absolute maximum ratings.
Electrical and optical characteristics (Ta=25 °C)
Parameter
Spectral response range
Peak sensitivity wavelength
Photosensitivity
Dark current
Cutoff frequency
Terminal capacitance
Noise equivalent power
Symbol
λ
λp
S
ID
fc
Ct
NEP
Condition
λ=λp
BGO: λ=480 nm
CsI (Tl): λ=540 nm
VR=70 V
λ=780 nm, VR=70 V
RL=50 Ω, -3 dB
VR=70 V, f=1 MHz
VR=70 V, λ=λp
Min.
-
-
-
-
-
-
-
-
Typ.
340 to 1100
960
0.66
0.30
0.37
2
40
40
3.8 × 10-14
Max.
-
-
-
-
-
6
-
-
-
Unit
nm
nm
A/W
A/W
A/W
nA
MHz
pF
W/Hz1/2
www.hamamatsu.com
1

S8650
Si PIN photodiode
S8650
Spectral response
0.7
(Typ. Ta=25 °C)
0.6 QE=100%
0.5
0.4
0.3
0.2
0.1
0
300 400 500 600 700 800 900 1000 1100
Wavelength (nm)
KPINB0231EC
Dark current vs. reverse voltage
100 nA
(Typ. Ta=25 °C)
10 nA
1 nA
100 pA
0.1
1 10
Reverse voltage (V)
100
KPINB0255EB
Terminal capacitance vs. reverse voltage
10 nF
(Typ. Ta=25 °C, f=1 MHz)
1 nF
100 pF
10 pF
0.1
1 10
Reverse voltage (V)
100
KPINB0256EB
2


Features Si PIN photodiode S8650 Flat surface id eal for bonding to scintillator The S8 650 Si PIN photodiode has an epoxy coat ing window processed to have a flat su rface (flatness: ±5 μm). When bonded to a scintillator, the flat surface a llows highly tight coupling to the scin tillator so bubbles are unlikely to pen etrate in between. We also accept speci al orders for machining flat surfaces on other ceramic package products. Feel free to place an order with us. Featu res Flat epoxy coating surface ideal fo r bonding to scintillator Flatness: ±5 μm Photosensitive area: 10 × 10 mm Applications Scintillation X-ray detect ors Calorimeters, etc. Absolute maximu m ratings (Ta=25 °C) Parameter Revers e voltage Operating temperature Storage temperature Symbol VR Max. Topr Tstg Value 100 -20 to +60 -20 to +80 Unit V °C °C Note: Exceeding the absolute maximum ratings even momentarily may c ause a drop in product quality. Always be sure to use the product within the absolute maximum ratings. Electrical and.
Keywords S8650, datasheet, pdf, HAMAMATSU, Si, PIN, photodiode, 8650, 650, 50, S865, S86, S8, Equivalent, stock, pinout, distributor, price, schematic, inventory, databook, Electronic, Components, Parameters, parts, cross reference, chip, Semiconductor, circuit, Electric, manual, substitute




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)