BC337-16 Amplifier Datasheet

BC337-16 Datasheet, PDF, Equivalent


Part Number

BC337-16

Description

NPN General Purpose Amplifier

Manufacture

Fairchild Semiconductor

Total Page 7 Pages
Datasheet
Download BC337-16 Datasheet


BC337-16
BC337-16
BC337-25
E
BC
TO-92
NPN General Purpose Amplifier
This device is designed for use as general purpose amplifiers
and switches requiring collector currents to 500 mA. Sourced from
Process 12. See TN3019A for characteristics.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol
Parameter
Value
VCEO
VCES
VEBO
IC
TJ, Tstg
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
Operating and Storage Junction Temperature Range
45
50
5.0
1.0
-55 to +150
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol
Characteristic
PD Total Device Dissipation
Derate above 25°C
RθJC Thermal Resistance, Junction to Case
RθJA Thermal Resistance, Junction to Ambient
Max
BC337-16 / BC337-25
625
5.0
83.3
200
Units
V
V
V
A
°C
Units
mW
mW /°C
°C/W
°C/W
© 1997 Fairchild Semiconductor Corporation
33716-25, Rev B

BC337-16
NPN General Purpose Amplifier
(continued)
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min Max Units
OFF CHARACTERISTICS
V (B R )C E O
V (B R )C E S
V (B R )E B O
ICBO
Collector-Emitter Breakdown
Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
IEBO Emitter Cutoff Current
IC = 10 mA, IB = 0
IC = 100 µA, IE = 0
IE = 100 µA, IC = 0
VCB = 20 V, IE = 0, TA = +25 °C
VCB = 20 V, IE = 0, TA = +150
°C
VEB = 5.0 V, IC = 0
ON CHARACTERISTICS
hFE DC Current Gain
VCE(sat)
VBE(on)
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
VCE = 1.0 V, IC = 100 mA
337-16
337-25
VCE = 1.0 V, IC = 500 mA
IC = 500 mA, IB = 50 mA
VCE = 1.0 V, IC = 500 mA
45
50
5.0
100
160
40
100
5.0
10
250
400
0.7
1.2
V
V
V
nA
µA
µA
V
V


Features BC337-16 / BC337-25 BC337-16 BC337-25 E BC TO-92 NPN General Purpose Amplif ier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 500 mA . Sourced from Process 12. See TN3019A for characteristics. Absolute Maximum Ratings* TA = 25°C unless otherwise no ted Symbol Parameter Value VCEO VCE S VEBO IC TJ, Tstg Collector-Emitter V oltage Collector-Base Voltage Emitter-B ase Voltage Collector Current - Continu ous Operating and Storage Junction Temp erature Range 45 50 5.0 1.0 -55 to +15 0 *These ratings are limiting values a bove which the serviceability of any se miconductor device may be impaired. NO TES: 1) These ratings are based on a ma ximum junction temperature of 150 degre es C. 2) These are steady state limits. The factory should be consulted on app lications involving pulsed or low duty cycle operations. Thermal Characterist ics TA = 25°C unless otherwise noted Symbol Characteristic PD Total Device Dissipation Derate above .
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