IGBT
SEMICONDUCTOR
TECHNICAL DATA
General Description
KEC Field Stop Trench IGBTs offer low switching losses, high energy eff...
Description
SEMICONDUCTOR
TECHNICAL DATA
General Description
KEC Field Stop Trench IGBTs offer low switching losses, high energy efficiency and short circuit ruggedness. It is designed for applications such as motor control, uninterrupted power supplies(UPS), general inverters.
FEATURES High speed switching High ruggedness, temperature stable behavior Short Circuit Withstand Times 10us Extremely enhanced avalanche capability
KGF40N60KDA
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL RATING UNIT
Collector-Emitter Voltage
VCES 600 V
Gate-Emitter Voltage
VGES
20 V
Collector Current
@Tc=25 @Tc=100
80 A IC
40 A
Pulsed Collector Current Diode Continuous Forward Current @Tc=100 Diode Maximum Forward Current
ICM* 120 A IF 40 A IFM 80 A
Maximum Power Dissipation
@Tc=25 @Tc=100
250 W PD
100 W
Maximum Junction Temperature
Tj 150
Storage Temperature Range
Tstg -55 to + 150
*Repetitive rating : Pulse width limited by max. junction temperature
THERMAL CHARACTERISTIC
CHARACTERISTIC Thermal Resistance, Junction to Case (IGBT) Thermal Resistance, Junction to Case (DIODE) Thermal Resistance, Junction to Ambient
SYMBOL Rt h JC Rt h JC Rt h JA
MAX. 0.5 1.0 40
UNIT /W /W /W
E C G
2015. 8. 07
Revision No : 2
1/8
KGF40N60KDA
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
TEST CONDITION
Static
Collector-Emitter Breakdown Voltage Collector Cut-off Current
BVCES ICES
VGE=0V , IC=250 A VGE=0V, VCE=600V
Gate Leakage Current Gate Threshold Voltage
Collector-Emitter S...
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