KGF40N60KDA IGBT Datasheet

KGF40N60KDA Datasheet, PDF, Equivalent


Part Number

KGF40N60KDA

Description

Field Stop Trench IGBT

Manufacture

KEC

Total Page 8 Pages
Datasheet
Download KGF40N60KDA Datasheet


KGF40N60KDA
SEMICONDUCTOR
TECHNICAL DATA
General Description
KEC Field Stop Trench IGBTs offer low switching losses, high energy efficiency
and short circuit ruggedness.
It is designed for applications such as motor control, uninterrupted power
supplies(UPS), general inverters.
FEATURES
High speed switching
High ruggedness, temperature stable behavior
Short Circuit Withstand Times 10us
Extremely enhanced avalanche capability
KGF40N60KDA
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL RATING UNIT
Collector-Emitter Voltage
VCES 600 V
Gate-Emitter Voltage
VGES
20 V
Collector Current
@Tc=25
@Tc=100
80 A
IC
40 A
Pulsed Collector Current
Diode Continuous Forward Current @Tc=100
Diode Maximum Forward Current
ICM* 120 A
IF 40 A
IFM 80 A
Maximum Power Dissipation
@Tc=25
@Tc=100
250 W
PD
100 W
Maximum Junction Temperature
Tj 150
Storage Temperature Range
Tstg -55 to + 150
*Repetitive rating : Pulse width limited by max. junction temperature
THERMAL CHARACTERISTIC
CHARACTERISTIC
Thermal Resistance, Junction to Case (IGBT)
Thermal Resistance, Junction to Case (DIODE)
Thermal Resistance, Junction to Ambient
SYMBOL
Rt h JC
Rt h JC
Rt h JA
MAX.
0.5
1.0
40
UNIT
/W
/W
/W
E
C
G
2015. 8. 07
Revision No : 2
1/8

KGF40N60KDA
KGF40N60KDA
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
TEST CONDITION
Static
Collector-Emitter Breakdown Voltage
Collector Cut-off Current
BVCES
ICES
VGE=0V , IC=250 A
VGE=0V, VCE=600V
Gate Leakage Current
Gate Threshold Voltage
Collector-Emitter Saturation Voltage
IGES
VGE(th)
VCE(sat)
VCE=0V, VGE= 20V
VGE=VCE, IC=4mA
VGE=15V, IC=40A
VGE=15V, IC=80A
Dynamic
VGE=15V, IC=40A, TC = 125
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
Turn-On Delay Time
Qg
Qge
Qgc
td(on)
VCC=300V, VGE=15V, IC= 40A
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
tr
td(off)
tf
Eon
Eoff
VCC=300V, IC=40A, VGE=15V,RG=10
Inductive Load, TC = 25 (Note 1)
Total Switching Loss
Ets
Turn-On Delay Time
td(on)
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Input Capacitance
Ouput Capacitance
Reverse Transfer Capacitance
tr
td(off)
tf
Eon
Eoff
Ets
Cies
Coes
Cres
VCC=300V, IC=40A, VGE=15V, RG=10
Inductive Load, TC = 125 (Note 1)
VCE=30V, VGE=0V, f=1MHz
Short Circuit Withstand Time
tsc VCC=300V, VGE=15V, TC=100
Note 1 : Energy loss include tail current and diode reverse recovery.
Marking
MIN. TYP. MAX. UNIT
600 - - V
-
- 250
A
- - 100 nA
4.5 5.5
7
V
- 1.65 2.1 V
- 2.25 -
V
- 1.9 -
V
- 150 -
nC
- 25 - nC
- 80 - nC
- 50 - ns
- 35 - ns
- 200 -
ns
- 35 - ns
-
0.85 1.15
mJ
-
0.65 0.85
mJ
- 1.5 2.0 mJ
- 50 - ns
- 40 - ns
- 220 -
ns
- 50 - ns
- 0.9 - mJ
- 0.9 - mJ
- 1.8 - mJ
-
3100 4000
pF
- 220 -
pF
- 120 -
pF
10 -
-
s
2015. 8. 07
Revision No : 2
2/8


Features SEMICONDUCTOR TECHNICAL DATA General Des cription KEC Field Stop Trench IGBTs of fer low switching losses, high energy e fficiency and short circuit ruggedness. It is designed for applications such a s motor control, uninterrupted power su pplies(UPS), general inverters. FEATURE S High speed switching High ruggedness, temperature stable behavior Short Circ uit Withstand Times 10us Extremely enha nced avalanche capability KGF40N60KDA MAXIMUM RATING (Ta=25 ) CHARACTERISTI C SYMBOL RATING UNIT Collector-Emitte r Voltage VCES 600 V Gate-Emitter Vol tage VGES 20 V Collector Current @T c=25 @Tc=100 80 A IC 40 A Pulsed Coll ector Current Diode Continuous Forward Current @Tc=100 Diode Maximum Forward C urrent ICM* 120 A IF 40 A IFM 80 A Ma ximum Power Dissipation @Tc=25 @Tc=100 250 W PD 100 W Maximum Junction Temp erature Tj 150 Storage Temperature Ra nge Tstg -55 to + 150 *Repetitive rat ing : Pulse width limited by max. junct ion temperature THERMAL CHARACTERISTIC CHARACTERISTIC Thermal .
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