S9014 transistor Datasheet

S9014 Datasheet, PDF, Equivalent


Part Number

S9014

Description

NPN epitaxial silicon planar transistor

Manufacture

MICRO ELECTRONICS

Total Page 1 Pages
Datasheet
Download S9014 Datasheet


S9014
MICRO S9014
DESCRIPTION
The S9014 is an NPN epitaxial silicon planar transistor designed for use in the audio
output stage and converter/inverter circuits.
ABSOLUTE MAXIMUM RATINGS
S9014:
12 3
1. Emitter 2. Base
Maximum Temperatures
Storage Temperature
-55~135
Operating Temperature
135
Lead Temperature (Soldering, <10s)
230
Maximum Power Dissipation
Total Disspation at 25Ambient Temperature
0.4W
Maximum Voltage
VCBO Collector to Base Voltage
VCEO Collector to Emitter Voltage
VEBO Emitter to Base Voltage
IC Collector Current (continuous)
50V
45V
5V
0.5A
ELECTRICAL CHARACTERISTICS (Ta=25Unless otherwise noted)
3. Collect
SYMBOL
CHARACTERISTICS
MIN. TYP. MAX. UNITS
TEST CONDITIOMNS
HFE1
VCE(SAT)
VBE
BVCEO
BVCBO
BVEBO
ICBO
fT
CCB
DC current gain
60
Collector Saturation Voltage
Base-Emitter Voltage
Collector to Emitter Breakdown Voltage 45
Collector to Base Breakdown Voltage 50
Emitter to Base Breakdown Voltage
5
Collector Cutoff Current
Transition frequency
150
Collector to Base Capacitance
1000
0.3
0.85
0.1
V
V
V
V
V
μA
6 pF
Ic=1mA Vce=5V
Ic=100mA Ib=10mA
Ic=1mA VCE=5V
Ic=1mA Ib=0
Ic=100μA Ie=0
Ie=100μA Ic=0
Vcb=50V Ie=0
Ic=10mA Vce=5V f=30MH Z
Vcb=10V Ic=0 f=1MH Z
Note:
HFE1 classification: A: 60~150 B: 100~300 C: 200~600 D: 400~1000
MICRO ELECTRONICS LTD.
7th Floor Enterprise Square Three,39 Wang Chiu Road, Kowloon Bay, Hong Kong.
Wang Chiu Road P.O. Box 69477 Hong Kong. Fax No. 2341 0321 Telex:43510 Micro Hx. Tel: 2343 0181-5
REV:0
25-May-05


Features ELECTRONICS MICRO S9014 DESCRIPTION T he S9014 is an NPN epitaxial silicon pl anar transistor designed for use in the audio output stage and converter/inver ter circuits. ABSOLUTE MAXIMUM RATINGS S9014: 12 3 1. Emitter 2. Base Maxi mum Temperatures Storage Temperature -55~135℃ Operating Temperature 135 Lead Temperature (Soldering, <10s) 230℃ Maximum Power Dissipation Tot al Disspation at 25℃ Ambient Temperat ure 0.4W Maximum Voltage VCBO Collec tor to Base Voltage VCEO Collector to E mitter Voltage VEBO Emitter to Base Vol tage IC Collector Current (continuous) 50V 45V 5V 0.5A ELECTRICAL CHARACTERI STICS (Ta=25℃ Unless otherwise noted) 3. Collect SYMBOL CHARACTERISTICS MIN. TYP. MAX. UNITS TEST CONDITIOMNS HFE1 VCE(SAT) VBE BVCEO BVCBO BVEBO IC BO fT CCB DC current gain 60 Collect or Saturation Voltage Base-Emitter Vol tage Collector to Emitter Breakdown Vo ltage 45 Collector to Base Breakdown V oltage 50 Emitter to Base Breakdown Voltage 5 Collector Cutoff Current.
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