SUD19N20-90

SUD19N20-90 Vishay Siliconix N-Channel 200 V (D-S) 175 °C MOSFET PRODUCT SUMMARY VDS (V) 200 RDS(on) () 0.090 at VGS = 10 V 0.105 at VGS = 6 V ID (A) 19 17.5 TO-252 FEATURES TrenchFET® Power MOSFET 175 °C Junction Temperature PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS Primary Side Switch D Drain Connected to Tab GDS Top View Ordering Information: SUD19N20-90-E3 (Lead (Pb)-free) G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current (TJ = 175 °C)b TC = 25 °C TC = 125 °C ID Pulsed Drain Current IDM Continuous Source Current (Diode Conduction) IS Avalanche Current IAS Single Pulse Avalanche Energy L = 0.1 mH EAS Maximum Power Dissipation TC = 25 °C TA = 25 °C PD Operating Junction and Storage Temperature Range TJ, Tstg Limit 200 ± 20 19 11 40 19 19 18 136b 3a - 55 to 175 THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambienta Junction-to-Case (Drain) Notes: a. Surface mounted on 1" x 1" FR4 board. b. See SOA curve for voltage derating. t  10 s Steady State Symbol RthJA RthJC Typical 15 40 0.85 Maximum 18 50 1.1 Unit V A mJ W °C Unit °C/W Document Number: 71767 S10-2245-Rev. E, 04-Oct-10 www.vishay.com 1 SUD19N20-90 Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Static Drain-Source Breakdown Voltage Gate Thr...