SUD19N20-90 MOSFET Datasheet

SUD19N20-90 Datasheet, PDF, Equivalent


Part Number

SUD19N20-90

Description

N-Channel MOSFET

Manufacture

Vishay

Total Page 8 Pages
Datasheet
Download SUD19N20-90 Datasheet


SUD19N20-90
SUD19N20-90
Vishay Siliconix
N-Channel 200 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
VDS (V)
200
RDS(on) ()
0.090 at VGS = 10 V
0.105 at VGS = 6 V
ID (A)
19
17.5
TO-252
FEATURES
• TrenchFET® Power MOSFET
• 175 °C Junction Temperature
• PWM Optimized
• 100 % Rg Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Primary Side Switch
D
Drain Connected to Tab
GDS
Top View
Ordering Information:
SUD19N20-90-E3 (Lead (Pb)-free)
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current (TJ = 175 °C)b
TC = 25 °C
TC = 125 °C
ID
Pulsed Drain Current
IDM
Continuous Source Current (Diode Conduction)
IS
Avalanche Current
IAS
Single Pulse Avalanche Energy
L = 0.1 mH
EAS
Maximum Power Dissipation
TC = 25 °C
TA = 25 °C
PD
Operating Junction and Storage Temperature Range
TJ, Tstg
Limit
200
± 20
19
11
40
19
19
18
136b
3a
- 55 to 175
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambienta
Junction-to-Case (Drain)
Notes:
a. Surface mounted on 1" x 1" FR4 board.
b. See SOA curve for voltage derating.
t 10 s
Steady State
Symbol
RthJA
RthJC
Typical
15
40
0.85
Maximum
18
50
1.1
Unit
V
A
mJ
W
°C
Unit
°C/W
Document Number: 71767
S10-2245-Rev. E, 04-Oct-10
www.vishay.com
1

SUD19N20-90
SUD19N20-90
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currentb
Drain-Source On-State Resistanceb
Forward Transconductanceb
Dynamica
VDS
VGS(th)
IGSS
IDSS
ID(on)
RDS(on)
gfs
VGS = 0 V, ID = 250 µA
VDS = VGS, ID = 250 µA
VDS = 0 V, VGS = ± 20 V
VDS = 200 V, VGS = 0 V
VDS = 200 V, VGS = 0 V, TJ = 125 °C
VDS = 200 V, VGS = 0 V, TJ = 175 °C
VDS =5 V, VGS = 10 V
VGS = 10 V, ID = 5 A
VGS = 10 V, ID = 5 A, TJ = 125 °C
VGS = 10 V, ID = 5 A, TJ = 175 °C
VGS = 6 V, ID = 5 A
VDS = 15 V, ID = 19 A
Input Capacitance
Ciss
Output Capacitance
Coss
VGS = 0 V, VDS = 25 V, F = 1 MHz
Reverse Transfer Capacitance
Crss
Total Gate Chargec
Qg
Gate-Source Chargec
Qgs VDS = 100 V, VGS = 10 V, ID = 19 A
Gate-Drain Chargec
Qgd
Gate Resistance
Rg
Turn-On Delay Timec
td(on)
Rise Timec
Turn-Off Delay Timec
tr
td(off)
VDD = 100 V, RL = 5.2
ID 19 A, VGEN = 10 V, Rg = 2.5
Fall Timec
tf
Source-Drain Diode Ratings and Characteristics (TC = 25 °C)
Pulsed Current
ISM
Diode Forward Voltageb
VSD IF = 19 A, VGS = 0 V
Source-Drain Reverse Recovery Time
trr
IF = 19 A, dI/dt = 100 A/µs
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width 300 µs, duty cycle 2 %.
c. Independent of operating temperature.
Min.
200
2
40
0.5
Typ.a
Max.
4
± 100
1
50
250
0.075
0.082
35
0.090
0.190
0.260
0.105
1800
180
80
34
8
12
15
50
30
60
51
2.9
25
75
45
90
50
0.9 1.5
180 250
Unit
V
nA
µA
A
S
pF
nC
ns
A
V
ns
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 71767
S10-2245-Rev. E, 04-Oct-10


Features SUD19N20-90 Vishay Siliconix N-Channel 2 00 V (D-S) 175 °C MOSFET PRODUCT SUMM ARY VDS (V) 200 RDS(on) () 0.090 a t VGS = 10 V 0.105 at VGS = 6 V ID (A) 19 17.5 TO-252 FEATURES • TrenchFE T® Power MOSFET • 175 °C Junction T emperature • PWM Optimized • 100 % Rg Tested • Compliant to RoHS Directi ve 2002/95/EC APPLICATIONS • Primary Side Switch D Drain Connected to Tab G DS Top View Ordering Information: SUD19 N20-90-E3 (Lead (Pb)-free) G S N-Chann el MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Par ameter Symbol Drain-Source Voltage V DS Gate-Source Voltage VGS Continuou s Drain Current (TJ = 175 °C)b TC = 2 5 °C TC = 125 °C ID Pulsed Drain Cu rrent IDM Continuous Source Current ( Diode Conduction) IS Avalanche Curren t IAS Single Pulse Avalanche Energy L = 0.1 mH EAS Maximum Power Dissipat ion TC = 25 °C TA = 25 °C PD Opera ting Junction and Storage Temperature R ange TJ, Tstg Limit 200 ± 20 19 11 40 19 19 18 136b 3a - 55 to 175 THERMAL RESISTAN.
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