MJE13007 Transistor Datasheet

MJE13007 Datasheet, PDF, Equivalent


Part Number

MJE13007

Description

Power Transistor

Manufacture

Multicomp

Total Page 4 Pages
Datasheet
Download MJE13007 Datasheet


MJE13007
MJE13007
Power Transistor
High Voltage Switching
Features:
NPN Plastic Power Transistors.
Switchmode Series NPN Silicon Power Transistors.
TO-220 Plastic Package
Dimension
A
B
C
D
E
F
G
H
J
K
L
M
N
O
Pin Configuration:
1. Base
2. Collector
3. Emitter
4. Collector
Minimum Maximum
14.42
16.51
9.63 10.67
3.56 4.83
- 0.90
1.15 1.40
3.75 3.88
2.29 2.79
2.54 3.43
- 0.56
12.70
14.73
2.80 4.07
2.03 2.92
- 31.24
7°
Dimensions : Millimetres
Page 1
31/05/05 V1.0

MJE13007
MJE13007
Power Transistor
Absolute Maximum Ratings
Parameter
Collector Emitter Sustaining Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current Continuous
*Peak
Base Current Continuous
*Peak
Emitter Current Continuous
*Peak
Power Dissipation up to Ta = 25ºC
Derate Above 25ºC
Power Dissipation up to TC = 25ºC
Derate Above 25ºC
Operating and Storage Junction Temperature Range
*Pulse Test: Pulse Width = 5ms, duty cycle 10%
Symbol
VCEO(sus)
VCEV
VEBO
IC
ICM
IB
IBM
IE
IEM
PD
Tj, Tstg
Rating
400
700
9
8
16
4
8
12
24
2
16
80
640
-65 to +150
Unit
V
A
W
mW/°C
°C
Thermal Resistance
Junction to Case
Junction to Ambient in Free Air
Maximum Lead Temperature for
Soldering Purpose 1/8" from Case for 5 Seconds
Rth(j-c)
Rth(j-a)
TL
1.56
62.5
275
Electrical Characteristics (Tc = 25ºC unless specified otherwise)
°C/W
°C
Parameter
Symbol
Test Condition
Minimum Typical Maximum Unit
Collector Emitter Sustaining Voltage **VCEO(sus)
IC = 10mA, IB = 0
Collector Cut off Current
Emitter Cut off Current
DC Current Gain
ICEV
IEBO
**hFE
VCEV = Rated Value, VBE(off) = 1.5V
TC = 100°C
VCEV = Rated Value, VBE(off) = 1.5V
VEB = 9V, IC = 0
IC = 2A, VCE = 5V
IC = 5A, VCE = 5V
400
-
-
8
5
-
-
-
-
-V
1.0
5.0 mA
1.0
60
30
-
Page 2
31/05/05 V1.0


Features MJE13007 Power Transistor High Voltage S witching Features: • NPN Plastic Pow er Transistors. • Switchmode Series N PN Silicon Power Transistors. TO-220 P lastic Package Dimension A B C D E F G H J K L M N O Pin Configuration: 1. Ba se 2. Collector 3. Emitter 4. Collector Minimum Maximum 14.42 16.51 9.63 1 0.67 3.56 4.83 - 0.90 1.15 1.40 3.7 5 3.88 2.29 2.79 2.54 3.43 - 0.56 1 2.70 14.73 2.80 4.07 2.03 2.92 - 31 .24 7° Dimensions : Millimetres Page 1 31/05/05 V1.0 MJE13007 Power Trans istor Absolute Maximum Ratings Paramet er Collector Emitter Sustaining Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Continuous * Peak Base Current Continuous *Peak Emit ter Current Continuous *Peak Power Diss ipation up to Ta = 25ºC Derate Above 2 5ºC Power Dissipation up to TC = 25ºC Derate Above 25ºC Operating and Stora ge Junction Temperature Range *Pulse Te st: Pulse Width = 5ms, duty cycle ≤ 1 0% Symbol VCEO(sus) VCEV VEBO IC ICM IB IBM IE IEM PD Tj, Tstg Rating 40.
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