IXFP20N50P3M MOSFET Datasheet

IXFP20N50P3M Datasheet, PDF, Equivalent


Part Number

IXFP20N50P3M

Description

Power MOSFET

Manufacture

IXYS

Total Page 6 Pages
Datasheet
Download IXFP20N50P3M Datasheet


IXFP20N50P3M
Preliminary Technical Information
Polar3TM HiperFETTM
Power MOSFET
IXFP20N50P3M
VDSS =
ID25 =
RDS(on)
500V
8A
300m
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Rectifier
Symbol
VDSS
VDGR
VGSS
VGSM
ID25
IDM
IA
EAS
dv/dt
PD
TJ
TJM
Tstg
TL
TSOLD
Md
Weight
Test Conditions
TJ = 25C to 150C
TJ = 25C to 150C, RGS = 1M
Continuous
Transient
TC = 25C
TC = 25C, Pulse Width Limited by TJM
TC = 25C
TC = 25C
IS IDM, VDD VDSS, TJ 150°C
TC = 25C
Maximum Lead Temperature for Soldering
Plastic Body for 10s
Mounting Torque
Maximum Ratings
500
500
V
V
30 V
40 V
8A
40 A
10 A
300 mJ
35
58
-55 ... +150
150
-55 ... +150
300
260
V/ns
W
 C
 C
 C
°C
°C
1.13 / 10
2.5
Nm/lb.in
g
Symbol
Test Conditions
(TJ = 25C Unless Otherwise Specified)
BVDSS
VGS = 0V, ID = 1mA
VGS(th)
VDS = VGS, ID = 1.5mA
IGSS VGS = 30V, VDS = 0V
IDSS VDS = VDSS, VGS = 0V
TJ = 125C
RDS(on)
VGS = 10V, ID = 10A, Note 1
Characteristic Values
Min. Typ. Max.
500 V
3.0 5.0 V
          100 nA
25 A
1.25 mA
300 m
OVERMOLDED
GDS
G = Gate
S = Source
D = Drain
Features
Plastic Overmolded Tab for Electrical
Isolation
Fast Intrinsic Rectifier
Avalanche Rated
Low RDS(ON) and QG
Low Package Inductance
Advantages
High Power Density
Easy to Mount
Space Savings
Applications
Switch-Mode and Resonant-Mode
Power Supplies
DC-DC Converters
Laser Drivers
AC and DC Motor Drives
Robotics and Servo Controls
© 2013 IXYS CORPORATION, All Rights Reserved
DS100415A(11/13)

IXFP20N50P3M
Symbol
Test Conditions
(TJ = 25C Unless Otherwise Specified)
gfs VDS = 20V, ID = 10A, Note 1
Ciss
Coss
Crss
VGS = 0V, VDS = 25V, f = 1MHz
RGi Gate Input Resistance
td(on)
tr
td(off)
tf
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 10A
RG = 5(External)
Qg(on)
Qgs
Qgd
VGS = 10V, VDS = 0.5 • VDSS, ID = 10A
RthJC
Characteristic Values
Min. Typ.
Max.
11 18
S
1800
230
8.3
pF
pF
pF
2.3  
10 ns
5 ns
43 ns
9 ns
36 nC
7 nC
13 nC
2.15 C/W
IXFP20N50P3M
ISOLATED TO-220 (IXFP...M)
12 3
Terminals: 1 - Gate
2 - Drain
3 - Source
Source-Drain Diode
Symbol
Test Conditions
(TJ = 25C Unless Otherwise Specified)
IS VGS = 0V
ISM Repetitive, Pulse Width Limited by TJM
VSD IF = IS, VGS = 0V, Note 1
trr
IRM
QRM
IF = 10A, -di/dt = 100A/s
VR = 100V, VGS = 0V
Characteristic Values
Min. Typ.
Max.
20 A
80 A
1.4 V
250 ns
8.0 A
0.6 μC
Note 1. Pulse test, t 300s, duty cycle, d 2%.
PRELIMANARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are
derived from a subjective evaluation of the design, based upon prior knowledge and experi-
ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592
by one or moreof the following U.S. patents: 4,860,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585 7,005,734 B2 7,157,338B2
6,710,405 B2 6,759,692 7,063,975 B2
6,710,463
6,771,478 B2 7,071,537


Features Preliminary Technical Information Polar 3TM HiperFETTM Power MOSFET IXFP20N50P 3M VDSS = ID25 = RDS(on)  500V 8A 300m N-Channel Enhancement Mode Ava lanche Rated Fast Intrinsic Rectifier Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Md We ight Test Conditions TJ = 25C to 15 0C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS  IDM, VDD VDSS, TJ  150°C TC = 25C Maxi mum Lead Temperature for Soldering Plas tic Body for 10s Mounting Torque Maxim um Ratings 500 500 V V  30 V  4 0 V 8A 40 A 10 A 300 mJ 35 58 -55 .. . +150 150 -55 ... +150 300 260 V/ns W  C  C  C °C °C 1. 13 / 10 2.5 Nm/lb.in g Symbol Test C onditions (TJ = 25C Unless Otherwis e Specified) BVDSS VGS = 0V, ID = 1mA VGS(th) VDS = VGS, ID = 1.5mA IGSS VGS = 30V, VDS = 0V IDSS VDS = VDSS , VGS = 0V TJ = 125C RDS(on) VGS = 10V, ID = 10A, Note 1 Characteristic Values Min. Typ. Max. 500 V 3.0 5.0 V  .
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