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IXFP20N50P3M

IXYS

Power MOSFET

Preliminary Technical Information Polar3TM HiperFETTM Power MOSFET IXFP20N50P3M VDSS = ID25 = RDS(on)  500V 8A 300m...


IXYS

IXFP20N50P3M

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Preliminary Technical Information Polar3TM HiperFETTM Power MOSFET IXFP20N50P3M VDSS = ID25 = RDS(on)  500V 8A 300m N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  150°C TC = 25C Maximum Lead Temperature for Soldering Plastic Body for 10s Mounting Torque Maximum Ratings 500 500 V V  30 V  40 V 8A 40 A 10 A 300 mJ 35 58 -55 ... +150 150 -55 ... +150 300 260 V/ns W  C  C  C °C °C 1.13 / 10 2.5 Nm/lb.in g Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) BVDSS VGS = 0V, ID = 1mA VGS(th) VDS = VGS, ID = 1.5mA IGSS VGS = 30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V TJ = 125C RDS(on) VGS = 10V, ID = 10A, Note 1 Characteristic Values Min. Typ. Max. 500 V 3.0 5.0 V           100 nA 25 A 1.25 mA 300 m OVERMOLDED GDS G = Gate S = Source D = Drain Features  Plastic Overmolded Tab for Electrical Isolation  Fast Intrinsic Rectifier  Avalanche Rated  Low RDS(ON) and QG  Low Package Inductance Advantages  High Power Density  Easy to Mount  Space Savings Applications  Switch-Mode and Resonant-Mode Power Supplies  DC-DC Converters  Laser Drivers  AC and DC Motor Drives  Robotics and Servo Controls © 2013 IXYS CORPORATION, All Rights R...




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