FOD817 Optocouplers Datasheet

FOD817 Datasheet, PDF, Equivalent


Part Number

FOD817

Description

4-Pin DIP Phototransistor Optocouplers

Manufacture

ON Semiconductor

Total Page 12 Pages
Datasheet
Download FOD817 Datasheet


FOD817
FOD814 Series, FOD817 Series
4-Pin DIP Phototransistor Optocouplers
Features
AC Input Response (FOD814)
Current Transfer Ratio in Selected Groups:
FOD814: 20–300%
FOD814A: 50–150%
FOD817: 50–600%
FOD817A: 80–160%
FOD817B: 130–260%
FOD817C: 200–400%
FOD817D: 300–600%
Minimum BVCEO of 70 V Guaranteed
Safety and Regulatory Approvals
– UL1577, 5,000 VACRMS for 1 Minute
– DIN EN/IEC60747-5-5
Applications
FOD814 Series
AC Line Monitor
Unknown Polarity DC Sensor
Telephone Line Interface
FOD817 Series
Power Supply Regulators
Digital Logic Inputs
Microprocessor Inputs
Description
The FOD814 consists of two gallium arsenide infrared
emitting diodes, connected in inverse parallel, driving a
silicon phototransistor output in a 4-pin dual in-line
package. The FOD817 Series consists of a gallium
arsenide infrared emitting diode driving a silicon
phototransistor in a 4-pin dual in-line package.
Functional Block Diagram
ANODE, CATHODE 1
CATHODE, ANODE 2
FOD814
4 COLLECTOR
ANODE 1
3 EMITTER
CATHODE 2
Figure 1. Schematic
4 COLLECTOR
3 EMITTER
4
FOD817
1
Figure 2. Package Outlines
©2006 Semiconductor Components Industries, LLC.
July-2018, Rev. 5
Publication Order Number:
FOD814/D

FOD817
Safety and Insulation Ratings
As per DIN EN/IEC 60747-5-5, this optocoupler is suitable for “safe electrical insulation” only within the safety limit
data. Compliance with the safety ratings shall be ensured by means of protective circuits.
Parameter
Installation Classifications per DIN VDE
0110/1.89 Table 1, For Rated Mains Voltage
Climatic Classification
Pollution Degree (DIN VDE 0110/1.89)
Comparative Tracking Index
< 150 VRMS
< 300 VRMS
Characteristics
I–IV
I–III
30/110/21
2
175
Symbol
Parameter
VPR
VIORM
VIOTM
Input-to-Output Test Voltage, Method A, VIORM x 1.6 = VPR,
Type and Sample Test with tm = 10 s, Partial Discharge < 5 pC
Input-to-Output Test Voltage, Method B, VIORM x 1.875 = VPR,
100% Production Test with tm = 1 s, Partial Discharge < 5 pC
Maximum Working Insulation Voltage
Highest Allowable Over-Voltage
External Creepage
External Clearance
External Clearance (for Option W, 0.4" Lead Spacing)
DTI
TS
IS,INPUT
PS,OUTPUT
RIO
Distance Through Insulation (Insulation Thickness)
Case Temperature(1)
Input Current(1)
Output Power(1)
Insulation Resistance at TS, VIO = 500 V(1)
Note:
1. Safety limit values – maximum values allowed in the event of a failure.
Value
1360
1594
850
8000
7
7
10
0.4
175
400
700
> 1011
Unit
Vpeak
Vpeak
Vpeak
Vpeak
mm
mm
mm
mm
°C
mA
mW
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Features FOD814 Series, FOD817 Series — 4-Pin D IP Phototransistor Optocouplers FOD814 Series, FOD817 Series 4-Pin DIP Photot ransistor Optocouplers Features • A C Input Response (FOD814) • Current T ransfer Ratio in Selected Groups: FOD8 14: 20–300% FOD814A: 50–150% FOD81 7: 50–600% FOD817A: 80–160% FOD817B : 130–260% FOD817C: 200–400% FOD817 D: 300–600% • Minimum BVCEO of 70 V Guaranteed • Safety and Regulatory Approvals – UL1577, 5,000 VACRMS for 1 Minute – DIN EN/IEC60747-5-5 Appli cations FOD814 Series • AC Line Monit or • Unknown Polarity DC Sensor • T elephone Line Interface FOD817 Series Power Supply Regulators • Digital Logic Inputs • Microprocessor Inputs Description The FOD814 consists of two gallium arsenide infrared emitting dio des, connected in inverse parallel, dri ving a silicon phototransistor output i n a 4-pin dual in-line package. The FOD 817 Series consists of a gallium arseni de infrared emitting diode driving a silicon phototransistor in a 4-pin dual in-line package. Function.
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