R6012JNX MOSFET Datasheet

R6012JNX Datasheet, PDF, Equivalent


Part Number

R6012JNX

Description

Nch 600V 12A Power MOSFET

Manufacture

ROHM

Total Page 15 Pages
Datasheet
Download R6012JNX Datasheet


R6012JNX
R6012JNX
  Nch 600V 12A Power MOSFET
   Datasheet
VDSS
RDS(on)(Max.)
ID
PD
600V
0.390Ω
±12A
60W
lFeatures
1) Fast reverse recovery time (trr)
2) Low on-resistance
3) Fast switching speed
4) Drive circuits can be simple
5) Pb-free plating ; RoHS compliant
lOutline
TO-220FM
 
 
 
 
      
lInner circuit
 
lApplication
Switching applications
lPackaging specifications
Packing
Tube
Packing code
C7 G
Marking
R6012JNX
Basic ordering unit (pcs)
2000
lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified)
Parameter
Symbol
Value
Unit
Drain - Source voltage
VDSS
600 V
Continuous drain current (Tc = 25°C)
ID*1 ±12 A
Pulsed drain current
IDP*2 ±36 A
Gate - Source voltage
VGSS
±30 V
Avalanche current, single pulse
IAS*3 2.9 A
Avalanche energy, single pulse
EAS*3
327 mJ
Power dissipation (Tc = 25°C)
PD 60 W
Junction temperature
Tj 150
Operating junction and storage temperature range
Tstg
-55 to +150
                                                                                        
                                                                                        
www.rohm.com
© 2019 ROHM Co., Ltd. All rights reserved.
1/11
20190111 - Rev.002

R6012JNX
R6012JNX
          
lThermal resistance
Parameter
Thermal resistance, junction - case
Thermal resistance, junction - ambient
Soldering temperature, wavesoldering for 10s
                Datasheet
                    
Symbol
RthJC
RthJA
Tsold
Values
Unit
Min. Typ. Max.
- - 2.07 /W
- - 70 /W
- - 265
lElectrical characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Drain - Source breakdown
voltage
Zero gate voltage
drain current
Gate - Source leakage current
Gate threshold voltage
Static drain - source
on - state resistance
Gate resistance
V(BR)DSS VGS = 0V, ID = 1mA
VDS = 600V, VGS = 0V
IDSS
Tj = 25°C
IGSS VGS = ±30V, VDS = 0V
VGS(th) VDS = VGS, ID = 2.5mA
RDS(on)*5 VGS = 15V, ID = 6.0A
Tj = 25°C
RG f = 1MHz, open drain
Values
Unit
Min. Typ. Max.
600 - - V
- - 100 μA
- - ±100 nA
5.0 6.0 7.0 V
- 0.300 0.390 Ω
- 2.2 - Ω
                                                                                         
www.rohm.com
© 2019 ROHM Co., Ltd. All rights reserved.
2/11
20190111 - Rev.002


Features R6012JNX   Nch 600V 12A Power MOSFET    Datasheet VDSS RDS(on)(Max.) ID PD 600V 0.390Ω ±12A 60W lFeature s 1) Fast reverse recovery time (trr) 2 ) Low on-resistance 3) Fast switching s peed 4) Drive circuits can be simple 5) Pb-free plating ; RoHS compliant lOut line TO-220FM                 lInner circuit   lApplica tion Switching applications lPackaging specifications Packing Tube Packing code C7 G Marking R6012JNX Basic or dering unit (pcs) 2000 lAbsolute maxi mum ratings (Ta = 25°C ,unless otherwi se specified) Parameter Symbol Value Unit Drain - Source voltage VDSS 6 00 V Continuous drain current (Tc = 25 °C) ID*1 ±12 A Pulsed drain current IDP*2 ±36 A Gate - Source voltage VGSS ±30 V Avalanche current, single pulse IAS*3 2.9 A Avalanche energy, single pulse EAS*3 327 mJ Power diss ipation (Tc = 25°C) PD 60 W Junction temperature Tj 150 ℃ Operating jun ction and storage temperature range Tstg -55 to +150 ℃                                             .
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