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R6012JNX Dataheets PDF



Part Number R6012JNX
Manufacturers ROHM
Logo ROHM
Description Power MOSFET
Datasheet R6012JNX DatasheetR6012JNX Datasheet (PDF)

R6012JNX   Nch 600V 12A Power MOSFET    Datasheet VDSS RDS(on)(Max.) ID PD 600V 0.390Ω ±12A 60W lFeatures 1) Fast reverse recovery time (trr) 2) Low on-resistance 3) Fast switching speed 4) Drive circuits can be simple 5) Pb-free plating ; RoHS compliant lOutline TO-220FM                lInner circuit   lApplication Switching applications lPackaging specifications Packing Tube Packing code C7 G Marking R6012JNX Basic ordering unit (pcs) 2000 lAbsolute maximum ratings (Ta = 25°C ,.

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R6012JNX   Nch 600V 12A Power MOSFET    Datasheet VDSS RDS(on)(Max.) ID PD 600V 0.390Ω ±12A 60W lFeatures 1) Fast reverse recovery time (trr) 2) Low on-resistance 3) Fast switching speed 4) Drive circuits can be simple 5) Pb-free plating ; RoHS compliant lOutline TO-220FM                lInner circuit   lApplication Switching applications lPackaging specifications Packing Tube Packing code C7 G Marking R6012JNX Basic ordering unit (pcs) 2000 lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified) Parameter Symbol Value Unit Drain - Source voltage VDSS 600 V Continuous drain current (Tc = 25°C) ID*1 ±12 A Pulsed drain current IDP*2 ±36 A Gate - Source voltage VGSS ±30 V Avalanche current, single pulse IAS*3 2.9 A Avalanche energy, single pulse EAS*3 327 mJ Power dissipation (Tc = 25°C) PD 60 W Junction temperature Tj 150 ℃ Operating junction and storage temperature range Tstg -55 to +150 ℃                                                                                                                                                                                   www.rohm.com © 2019 ROHM Co., Ltd. All rights reserved. 1/11 20190111 - Rev.002 R6012JNX            lThermal resistance Parameter Thermal resistance, junction - case Thermal resistance, junction - ambient Soldering temperature, wavesoldering for 10s                 Datasheet                      Symbol RthJC RthJA Tsold Values Unit Min. Typ. Max. - - 2.07 ℃/W - - 70 ℃/W - - 265 ℃ lElectrical characteristics (Ta = 25°C) Parameter Symbol Conditions Drain - Source breakdown voltage Zero gate voltage drain current Gate - Source leakage current Gate threshold voltage Static drain - source on - state resistance Gate resistance V(BR)DSS VGS = 0V, ID = 1mA VDS = 600V, VGS = 0V IDSS Tj = 25°C IGSS VGS = ±30V, VDS = 0V VGS(th) VDS = VGS, ID = 2.5mA RDS(on)*5 VGS = 15V, ID = 6.0A Tj = 25°C RG f = 1MHz, open drain Values Unit Min. Typ. Max. 600 - - V - - 100 μA - - ±100 nA 5.0 6.0 7.0 V - 0.300 0.390 Ω - 2.2 - Ω                                                                                           www.rohm.com © 2019 ROHM Co., Ltd. All rights reserved. 2/11 20190111 - Rev.002 R6012JNX                            Datasheet lElectrical characteristics (Ta = 25°C) Parameter Symbol Conditions Input capacitance Output capacitance Reverse transfer capacitance Effective output capacitance energy related Effective output capacitance time related Turn - on delay time Rise time Turn - off delay time Fall time Ciss VGS = 0V Coss VDS = 100V Crss f = 1MHz Co(er)*6 VGS = 0V Co(tr)*7 td(on)*5 tr*5 td(off)*5 tf*5 VDS = 0V to 480V VDD ⋍ 300V, VGS = 15V ID = 6.0A RL ⋍ 49.9Ω RG = 10Ω Values Min. Typ. Max. - 900 - 60 - 1.6 - - 44 - - 160 - - 23 - 17 - 44 - 15 - Unit pF ns lGate charge characteristics (Ta = 25°C) Parameter Symbol Conditions Total gate charge Gate - Source charge Gate - Drain charge Gate plateau voltage Qg*5 Qgs*5 Qgd*5 V(plateau) VDD ⋍ 300V ID = 12A VGS = 15V VDD ⋍ 300V, ID = 12A Values Min. Typ. Max. - 28 - 8.5 - 10.5 - 9.0 - Unit nC V *1 Limited only by maximum temperature allowed. *2 Pw ≤ 10μs, Duty cycle ≤ 1% *3 L ⋍ 50mH, VDD = 50V, RG = 25Ω, starting Tj = 25°C *4 Tc=25℃ *5 Pulsed *6 Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising   from 0 to 80% VDSS. *7 Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising   from 0 to 80% VDSS.                                                                                           www.rohm.com © 2019 ROHM Co., Ltd. All rights reserved. 3/11 20190111 - Rev.002 R6012JNX                        Datasheet lBody diode electrical characteristics (Source-Drain) (Ta = 25°C) Parameter Symbol Conditions Min. Values Typ. Max. Source current Pulsed source current IS*1 TC = 25℃ ISP*2 - - 12 - - 36 Source-Drain voltage VSD*5 VGS = 0V, IS = 12A - - 1.7 Reverse recovery time Reverse recovery charge Peak reverse recovery current trr*5 Qrr*5 IS = 12A di/dt = 100A/μs Irr*5 - 70 - 250 - 7.2 - Unit A A V ns nC A                                                                                            www.rohm.com © 2019 ROHM Co., Ltd. All rights reserved. 4/11 20190111 - Rev.0.


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