Document
R6012JNX
Nch 600V 12A Power MOSFET
Datasheet
VDSS RDS(on)(Max.)
ID PD
600V 0.390Ω ±12A
60W
lFeatures
1) Fast reverse recovery time (trr) 2) Low on-resistance 3) Fast switching speed 4) Drive circuits can be simple 5) Pb-free plating ; RoHS compliant
lOutline
TO-220FM
lInner circuit
lApplication Switching applications
lPackaging specifications Packing
Tube
Packing code
C7 G
Marking
R6012JNX
Basic ordering unit (pcs)
2000
lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified)
Parameter
Symbol
Value
Unit
Drain - Source voltage
VDSS
600 V
Continuous drain current (Tc = 25°C)
ID*1 ±12 A
Pulsed drain current
IDP*2 ±36 A
Gate - Source voltage
VGSS
±30 V
Avalanche current, single pulse
IAS*3 2.9 A
Avalanche energy, single pulse
EAS*3
327 mJ
Power dissipation (Tc = 25°C)
PD 60 W
Junction temperature
Tj 150 ℃
Operating junction and storage temperature range
Tstg
-55 to +150
℃
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1/11
20190111 - Rev.002
R6012JNX
lThermal resistance
Parameter
Thermal resistance, junction - case Thermal resistance, junction - ambient Soldering temperature, wavesoldering for 10s
Datasheet
Symbol
RthJC RthJA Tsold
Values Unit
Min. Typ. Max.
- - 2.07 ℃/W
- - 70 ℃/W
- - 265 ℃
lElectrical characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Drain - Source breakdown voltage
Zero gate voltage drain current
Gate - Source leakage current Gate threshold voltage
Static drain - source on - state resistance
Gate resistance
V(BR)DSS VGS = 0V, ID = 1mA
VDS = 600V, VGS = 0V IDSS
Tj = 25°C IGSS VGS = ±30V, VDS = 0V VGS(th) VDS = VGS, ID = 2.5mA RDS(on)*5 VGS = 15V, ID = 6.0A
Tj = 25°C RG f = 1MHz, open drain
Values Unit
Min. Typ. Max.
600 - - V
- - 100 μA
- - ±100 nA 5.0 6.0 7.0 V
- 0.300 0.390 Ω
- 2.2 - Ω
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2/11
20190111 - Rev.002
R6012JNX
Datasheet
lElectrical characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Input capacitance
Output capacitance
Reverse transfer capacitance Effective output capacitance energy related Effective output capacitance time related
Turn - on delay time
Rise time
Turn - off delay time Fall time
Ciss VGS = 0V Coss VDS = 100V Crss f = 1MHz
Co(er)*6 VGS = 0V
Co(tr)*7
td(on)*5 tr*5
td(off)*5 tf*5
VDS = 0V to 480V
VDD ⋍ 300V, VGS = 15V ID = 6.0A RL ⋍ 49.9Ω RG = 10Ω
Values Min. Typ. Max.
- 900 - 60 - 1.6 -
- 44 -
- 160 -
- 23 - 17 - 44 - 15 -
Unit pF ns
lGate charge characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Total gate charge Gate - Source charge Gate - Drain charge Gate plateau voltage
Qg*5 Qgs*5 Qgd*5 V(plateau)
VDD ⋍ 300V ID = 12A VGS = 15V VDD ⋍ 300V, ID = 12A
Values Min. Typ. Max.
- 28 - 8.5 - 10.5 - 9.0 -
Unit nC V
*1 Limited only by maximum temperature allowed. *2 Pw ≤ 10μs, Duty cycle ≤ 1% *3 L ⋍ 50mH, VDD = 50V, RG = 25Ω, starting Tj = 25°C *4 Tc=25℃ *5 Pulsed
*6 Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% VDSS.
*7 Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.
www.rohm.com © 2019 ROHM Co., Ltd. All rights reserved.
3/11
20190111 - Rev.002
R6012JNX
Datasheet
lBody diode electrical characteristics (Source-Drain) (Ta = 25°C)
Parameter
Symbol
Conditions
Min.
Values Typ.
Max.
Source current Pulsed source current
IS*1
TC = 25℃ ISP*2
- - 12 - - 36
Source-Drain voltage
VSD*5 VGS = 0V, IS = 12A
-
- 1.7
Reverse recovery time Reverse recovery charge Peak reverse recovery current
trr*5
Qrr*5
IS = 12A di/dt = 100A/μs
Irr*5
- 70 - 250 - 7.2 -
Unit
A A V ns nC A
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4/11
20190111 - Rev.0.