R6076KNZ4

R6076KNZ4 　　Nch 600V 76A Power MOSFET VDSS RDS(on)(Max.) ID PD 600V 42mΩ ±76A 735W lFeatures 1) Low on-resistance 2) Fast switching 3) Parallel use is easy 4) Pb-free plating ; RoHS compliant lOutline TO-247 　 　 　 　 　　　　　　 lInner circuit 　　 Datasheet 　 lApplication Switching lPackaging specifications Packing Tube Packing code C13 Marking R6076KNZ4 Quantity (pcs) 600 lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified) Parameter Symbol Value Unit Drain - Source voltage Continuous drain current (Tc = 25°C) Pulsed drain current VDSS ID*1 IDP*2 600 ±76 ±228 V A A Gate - Source voltage static AC(f＞1Hz) VGSS ±20 V ±30 V Avalanche current, single pulse IAS 13.4 A Avalanche energy, single pulse EAS*3 1954 mJ Power dissipation (Tc = 25°C) PD 735 W Junction temperature Tj 150 ℃ Operating junction and storage temperature range Tstg -55 to +150 ℃ 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　　 　 　 　 　 　 　 　 　 　 　 www.rohm.com © 2019 ROHM Co., Ltd. All rights reserved. 1/11 20200317 - Rev.002 　 　 R6076KNZ4 　 　 　 　　 　 lThermal resistance Parameter Thermal resistance, junction - case Thermal resistance, junction - ambient Soldering temperature, wavesoldering for 10s 　 　 　 　 　 　 　 　 Datasheet 　 　 　　　　　　　　　　　　　　　　 Symbol RthJC*4 RthJA Tsold Values Unit Min. Typ. Max. - - 0.17 ℃/W - - 30 ℃/W - - 265 ℃ lElectrical characteristics (Ta = 25°C) Parameter Symbol Conditions Drain - Source breakdown voltage Ze...