R6076KNZ4 MOSFET Datasheet

R6076KNZ4 Datasheet, PDF, Equivalent


Part Number

R6076KNZ4

Description

Nch 600V 76A Power MOSFET

Manufacture

ROHM

Total Page 14 Pages
Datasheet
Download R6076KNZ4 Datasheet


R6076KNZ4
R6076KNZ4
  Nch 600V 76A Power MOSFET
VDSS
RDS(on)(Max.)
ID
PD
600V
42mΩ
±76A
735W
lFeatures
1) Low on-resistance
2) Fast switching speed
3) Parallel use is easy
4) Pb-free plating ; RoHS compliant
lOutline
TO-247
 
 
 
 
      
lInner circuit
   Datasheet
 
lApplication
Switching
lPackaging specifications
Packing
Tube
Packing code
C13
Marking
R6076KNZ4
Basic ordering unit (pcs)
600
lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified)
Parameter
Symbol
Value
Unit
Drain - Source voltage
Continuous drain current (Tc = 25°C)
Pulsed drain current
VDSS
ID*1
IDP*2
600
±76
±228
V
A
A
Gate - Source voltage
static
AC(f1Hz)
VGSS
±20 V
±30 V
Avalanche current, single pulse
IAS 13.4 A
Avalanche energy, single pulse
EAS*3
1954
mJ
Power dissipation (Tc = 25°C)
PD 735 W
Junction temperature
Tj 150
Operating junction and storage temperature range
Tstg
-55 to +150
                                                                                        
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© 2018 ROHM Co., Ltd. All rights reserved.
1/11
20181005 - Rev.001    

R6076KNZ4
R6076KNZ4
          
lThermal resistance
Parameter
Thermal resistance, junction - case
Thermal resistance, junction - ambient
Soldering temperature, wavesoldering for 10s
                Datasheet
                    
Symbol
RthJC*4
RthJA
Tsold
Values
Unit
Min. Typ. Max.
- - 0.17 /W
- - 45 /W
- - 265
lElectrical characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Drain - Source breakdown
voltage
Zero gate voltage
drain current
Gate - Source leakage current
Gate threshold voltage
Static drain - source
on - state resistance
Gate resistance
V(BR)DSS VGS = 0V, ID = 1mA
VDS = 600V, VGS = 0V
IDSS Tj = 25°C
Tj = 125°C
IGSS VGS = ±20V, VDS = 0V
VGS(th) VDS = 10V, ID = 1mA
VGS = 10V, ID = 44.4A
RDS(on)*5 Tj = 25°C
Tj = 125°C
RG f = 1MHz, open drain
Values
Unit
Min. Typ. Max.
600 - - V
   
- - 100 μA
- - 1000
- - ±100 nA
3 - 5V
   
- 38 42 mΩ
- 85 -
- 1.1 - Ω
                                                                                         
www.rohm.com
© 2018 ROHM Co., Ltd. All rights reserved.
2/12
20181005 - Rev.001


Features R6076KNZ4   Nch 600V 76A Power MOSFE T VDSS RDS(on)(Max.) ID PD 600V 42mΩ ±76A 735W lFeatures 1) Low on-resist ance 2) Fast switching speed 3) Paralle l use is easy 4) Pb-free plating ; RoHS compliant lOutline TO-247                lInner circuit    Datasheet   lApplication Swi tching lPackaging specifications Packi ng Tube Packing code C13 Marking R 6076KNZ4 Basic ordering unit (pcs) 60 0 lAbsolute maximum ratings (Ta = 25° C ,unless otherwise specified) Paramet er Symbol Value Unit Drain - Source voltage Continuous drain current (Tc = 25°C) Pulsed drain current VDSS ID*1 IDP*2 600 ±76 ±228 V A A Gate - S ource voltage static AC(f>1Hz) VGSS ±20 V ±30 V Avalanche current, sin gle pulse IAS 13.4 A Avalanche energy , single pulse EAS*3 1954 mJ Power dissipation (Tc = 25°C) PD 735 W Jun ction temperature Tj 150 ℃ Operatin g junction and storage temperature rang e Tstg -55 to +150 ℃                                                                                  .
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