RBQ10NS100AFH Diode Datasheet

RBQ10NS100AFH Datasheet, PDF, Equivalent


Part Number

RBQ10NS100AFH

Description

Schottky Barrier Diode

Manufacture

ROHM

Total Page 9 Pages
Datasheet
Download RBQ10NS100AFH Datasheet


RBQ10NS100AFH
RBQ10NS100AFH
Schottky Barrier Diode
(AEC-Q101 qualified) Data sheet
                                                  Outline
VR 100 V
Io 10 A
IFSM 100 A
Features
High reliability
Power mold type
Cathode common dual type
Low IR
Inner Circuit
   
 
 
 
 
 
 
 
 
   
Application
Packaging Specifications
Switching power supply
Packing
Embossed Tape
Reel Size(mm)
330
Taping Width(mm)
24
Structure
Quantity(pcs)
1000
Silicon epitaxial planar
Taping Code
TL
Marking
BQ10NS100A
Absolute Maximum Ratings (Tc=25ºC unless otherwise specified)
Parameter
Symbol
Conditions
Limits
Unit
Repetitive peak reverse voltage
VRM
Duty0.5
100 V
Reverse voltage
Average rectified forward current
Peak forward surge current
Junction temperature(1)
VR Reverse direct voltage
100 V
Io
IFSM
60Hz half sin waveformresistive load
Io/2 per diodeTc=105Max.
60Hz half sin waveform
non-repetitiveper diodeTa=25
10
100
A
A
Tj -
150
Storage temperature
Tstg -
Note(1) To avoid occurrence of thermal runawayactual board is to be designed to fulfill dPd/dTj<1/RθJA.
Attention
-55 150
www.rohm.com
© 2018- ROHMCo., Ltd.All rights reserved.
              
1/6   2019/05/27_Rev.002

RBQ10NS100AFH
RBQ10NS100AFH
                                    Data sheet
Electrical Characteristics
Parameter
Forward voltage(1)
Reverse current(1)
Note (1) Value per diode
(Tj=25ºC unless otherwise specified)
Symbol
Conditions
VF IF=5A
IR VR=100V
Min. Typ. Max. Unit
- - 0.77 V
- - 80 μA
Thermal Characteristics                                                                  
Parameter
Symbol Min. Typ. Max. Unit
Thermal Resistance (Junction to case)(1) (2)
Per diode
Per device
RθJC
-
-
- 2.1 /W
- 1.3 /W
Thermal Resistance (Junction to ambient)(1) (3)
Notes (1) Value is guaranteed by design.
  RθJA - - 55 /W
(2) Transient dual interface measurement (TDIM) method.
(3) Mounted on 50 x 50 x 1.6mm FR4 boardsingle-sided copper35μm thicknessreference footprint.
Characteristic Curves
                                                                          
www.rohm.com
© 2018- ROHMCo., Ltd.All rights reserved.
2/6
2019/05/27_Rev.002


Features RBQ10NS100AFH Schottky Barrier Diode ( AEC-Q101 qualified) Data sheet                                               ●Outline VR 100 V Io 1 0 A IFSM 100 A ●Features High reliab ility Power mold type Cathode common du al type Low IR ●Inner Circuit                        ●Application ●Packaging S pecifications Switching power supply Packing Embossed Tape Reel Size(mm) 330 Taping Width(mm) 24 ●Structure Quantity(pcs) 1000 Silicon epitaxia l planar Taping Code TL Marking BQ1 0NS100A ●Absolute Maximum Ratings (T c=25ºC unless otherwise specified) Pa rameter Symbol Conditions Limits Un it Repetitive peak reverse voltage VR M Duty≦0.5 100 V Reverse voltage A verage rectified forward current Peak f orward surge current Junction temperatu re(1) VR Reverse direct voltage 100 V Io IFSM 60Hz half sin waveformresist ive load Io/2 per diodeTc=105℃Max. 60Hz half sin waveform non-repetitiveper diodeTa=25℃ 10 100 A A Tj - 150 ℃ Storage temperature Tstg - Note(1) To avo.
Keywords RBQ10NS100AFH, datasheet, pdf, ROHM, Schottky, Barrier, Diode, BQ10NS100AFH, Q10NS100AFH, 10NS100AFH, RBQ10NS100AF, RBQ10NS100A, RBQ10NS100, Equivalent, stock, pinout, distributor, price, schematic, inventory, databook, Electronic, Components, Parameters, parts, cross reference, chip, Semiconductor, circuit, Electric, manual, substitute




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)