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AQ24-02HTG Dataheets PDF



Part Number AQ24-02HTG
Manufacturers Littelfuse
Logo Littelfuse
Description General Purpose ESD Protection
Datasheet AQ24-02HTG DatasheetAQ24-02HTG Datasheet (PDF)

TVS Diode Array (SPA®Diodes) General Purpose ESD Protection - AQxx-02HTG Series AQxx-02HTG Series 500W TVS Diode Array RoHS Pb GREEN Pinout and Functional Block Diagram 1 3 2 Description The AQxx-02HTG Series TVS Diode Array is designed to protect sensitive equipment from damage due to electrostatic discharge (ESD), electrical fast transients (EFT), and lightning induced surges. This AQxx series can safely absorb repetitive ESD strikes of ±30 kV (contact and air discharge as defined in IEC 61.

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TVS Diode Array (SPA®Diodes) General Purpose ESD Protection - AQxx-02HTG Series AQxx-02HTG Series 500W TVS Diode Array RoHS Pb GREEN Pinout and Functional Block Diagram 1 3 2 Description The AQxx-02HTG Series TVS Diode Array is designed to protect sensitive equipment from damage due to electrostatic discharge (ESD), electrical fast transients (EFT), and lightning induced surges. This AQxx series can safely absorb repetitive ESD strikes of ±30 kV (contact and air discharge as defined in IEC 61000-4-2) without any performance degradation. Additionally, the AQ05 can safely conduct a 33A 8/20 surge event as defined in IEC 61000-4-5 2nd Edition at low voltage clamping levels. Features • ESD, IEC 61000-4-2, ±30kV contact, ±30kV air • EFT, IEC 61000-4-4, 50A (5/50ns) • Lightning, 33A (8/20μs as defined in IEC 61000-4-5 2nd edition) for the AQ05 • Working voltages: 5V, 12V, 15V, 24V and 36V ESD, ISO 10605, 330pF 330Ω, ±30kV contact, ±30kV air • Low clamping voltage • Low leakage current • AEC-Q101 qualified • Moisture Sensitivity Level (MSL -1) • Halogen free, lead free and RoHS compliant • PPAP capable Applications • Industrial Equipment • Test and Medical Equipment • Point-of-Sale Terminals • Motor Controls • Legacy Ports (RS-232, RS-485) • Security and Alarm Systems RS-232 Application Example RS-232 Port RD TD RTS CTS DSR DTR Transceiver IC Life Support Note: Not Intended for Use in Life Support or Life Saving Applications The products shown herein are not designed for use in life sustaining or life saving applications unless otherwise expressly indicated. Case GND AQ15 (x6) (bidirectional implementation) © 2019 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 09/17/19 TVS Diode Array (SPA®Diodes) General Purpose ESD ProtAecQtxioxn-0-2AHQTGxxS-0e2rHieTsG Series Absolute Maximum Ratings Symbol Parameter Value Units PPk TOP TSTOR Peak Pulse Power (tp=8/20μs) Operating Temperature Storage Temperature 500 -40 to 150 -55 to 150 CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the component. This is a stress only rating and operation of the component at these or any other conditions above those indicated in the operational sections of this specification is not implied. W °C °C AQ05 Electrical Characteristics (TOP=25ºC) Parameter Reverse Standoff Voltage Breakdown Voltage Reverse Leakage Current Clamp Voltage1 Dynamic Resistance2 Peak Pulse Current ESD Withstand Voltage1 Diode Capacitance1 Symbol VRWM VBR ILEAK VC RDYN IPP VESD CI/O-GND CI/O-I/O Test Conditions IR=1μA IR=1mA VR=5V IPP=1A, tp=8/20µs, Pin 1 or Pin 2 to Pin 3 IPP=10A, tp=8/20µs, Pin 1 or Pin 2 to Pin 3 TLP, tp=100ns, Pin 1 or Pin 2 to Pin 3 tp=8/20µs IEC 61000-4-2 (Contact Discharge) IEC 61000-4-2 (Air Discharge) Reverse Bias=0V, f=1MHz Reverse Bias=0V, f=1MHz Min 6.0 ±30 ±30 Typ 7.0 8.0 10.5 0.19 290 145 Max 5.0 1.0 9.8 13.0 33 350 180 Units V V μA V V Ω A kV kV pF pF AQ12 Electrical Characteristics (TOP=25ºC) Parameter Reverse Standoff Voltage Breakdown Voltage Reverse Leakage Current Clamp Voltage1 Dynamic Resistance2 Peak Pulse Current ESD Withstand Voltage1 Diode Capacitance1 Symbol VRWM VBR ILEAK VC RDYN IPP VESD CI/O-GND CI/O-I/O Test Conditions IR=1μA IR=1mA VR=12V IPP=1A, tp=8/20µs, Pin 1 or Pin 2 to Pin 3 IPP=10A, tp=8/20µs, Pin 1 or Pin 2 to Pin 3 TLP, tp=100ns, Pin 1 or Pin 2 to Pin 3 tp=8/20µs IEC 61000-4-2 (Contact Discharge) IEC 61000-4-2 (Air Discharge) Reverse Bias=0V, f=1MHz Reverse Bias=0V, f=1MHz Min 13.3 ±30 ±30 Typ 14.2 16.0 20.0 0.25 110 55 Max 12.0 1.0 18.5 22.5 20 135 85 Units V V μA V V Ω A kV kV pF pF © 2019 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 09/17/19 TVS Diode Array (SPA®Diodes) General Purpose ESD ProtAecQtxioxn-0-2AHQTGxxS-0e2rHieTsG Series AQ15 Electrical Characteristics (TOP=25ºC) Parameter Reverse Standoff Voltage Breakdown Voltage Reverse Leakage Current Clamp Voltage1 Dynamic Resistance2 Peak Pulse Current ESD Withstand Voltage1 Diode Capacitance1 Symbol VRWM VBR ILEAK VC RDYN IPP VESD CI/O-GND CI/O-I/O Test Conditions IR=1μA IR=1mA VR=15V IPP=1A, tp=8/20µs, Pin 1 or Pin 2 to Pin 3 IPP=10A, tp=8/20µs, Pin 1 or Pin 2 to Pin 3 TLP, tp=100ns, Pin 1 or Pin 2 to Pin 3 tp=8/20µs IEC 61000-4-2 (Contact Discharge) IEC 61000-4-2 (Air Discharge) Reverse Bias=0V, f=1MHz Reverse Bias=0V, f=1MHz AQ24 Electrical Characteristics (TOP=25ºC) Parameter Reverse Standoff Voltage Breakdown Voltage Reverse Leakage Current Clamp Voltage1 Dynamic Resistance2 Peak Pulse Current ESD Withstand Voltage1 Diode Capacitance1 Symbol VRWM VBR ILEAK VC RDYN IPP VESD CI/O-GND CI/O-I/O Test Conditions IR=1μA IR=1mA VR=24V IPP=1A, tp=8/20µs, Pin 1 or Pin 2 to Pin 3 IPP=5A, tp=8/20µs, Pin 1 or Pin 2 to Pin 3 TLP, tp=100ns, Pin 1 or Pin 2 to Pin 3 tp=8/20µs IEC 61000-4-2 (Contact Discharge) IEC 61000-4-2 (Air D.


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