Document
TVS Diode Array (SPA®Diodes)
General Purpose ESD Protection - AQxx-02HTG Series
AQxx-02HTG Series 500W TVS Diode Array
RoHS Pb GREEN
Pinout and Functional Block Diagram
1 3
2
Description
The AQxx-02HTG Series TVS Diode Array is designed to protect sensitive equipment from damage due to electrostatic discharge (ESD), electrical fast transients (EFT), and lightning induced surges.
This AQxx series can safely absorb repetitive ESD strikes of ±30 kV (contact and air discharge as defined in IEC 61000-4-2) without any performance degradation. Additionally, the AQ05 can safely conduct a 33A 8/20 surge event as defined in IEC 61000-4-5 2nd Edition at low voltage clamping levels.
Features
• ESD, IEC 61000-4-2, ±30kV contact, ±30kV air
• EFT, IEC 61000-4-4, 50A (5/50ns)
• Lightning, 33A (8/20μs as defined in IEC 61000-4-5 2nd edition) for the AQ05
• Working voltages: 5V, 12V, 15V, 24V and 36V
ESD, ISO 10605, 330pF 330Ω, ±30kV contact, ±30kV air
• Low clamping voltage
• Low leakage current
• AEC-Q101 qualified
• Moisture Sensitivity Level (MSL -1)
• Halogen free, lead free and RoHS compliant
• PPAP capable
Applications
• Industrial Equipment
• Test and Medical Equipment
• Point-of-Sale Terminals
• Motor Controls
• Legacy Ports
(RS-232, RS-485)
• Security and Alarm Systems
RS-232 Application Example
RS-232 Port
RD TD RTS CTS DSR DTR
Transceiver
IC
Life Support Note:
Not Intended for Use in Life Support or Life Saving Applications
The products shown herein are not designed for use in life sustaining or life saving applications unless otherwise expressly indicated.
Case GND
AQ15 (x6)
(bidirectional implementation)
© 2019 Littelfuse, Inc. Specifications are subject to change without notice.
Revised: 09/17/19
TVS Diode Array (SPA®Diodes)
General Purpose ESD ProtAecQtxioxn-0-2AHQTGxxS-0e2rHieTsG Series
Absolute Maximum Ratings
Symbol
Parameter
Value
Units
PPk TOP TSTOR
Peak Pulse Power (tp=8/20μs) Operating Temperature
Storage Temperature
500 -40 to 150 -55 to 150
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the component. This is a stress only rating and operation of the component at these or any other conditions above those indicated in the operational sections of this specification is not implied.
W °C °C
AQ05 Electrical Characteristics (TOP=25ºC)
Parameter Reverse Standoff Voltage Breakdown Voltage Reverse Leakage Current
Clamp Voltage1
Dynamic Resistance2 Peak Pulse Current
ESD Withstand Voltage1
Diode Capacitance1
Symbol VRWM VBR ILEAK
VC
RDYN IPP
VESD
CI/O-GND CI/O-I/O
Test Conditions
IR=1μA IR=1mA VR=5V IPP=1A, tp=8/20µs, Pin 1 or Pin 2 to Pin 3 IPP=10A, tp=8/20µs, Pin 1 or Pin 2 to Pin 3 TLP, tp=100ns, Pin 1 or Pin 2 to Pin 3 tp=8/20µs IEC 61000-4-2 (Contact Discharge)
IEC 61000-4-2 (Air Discharge)
Reverse Bias=0V, f=1MHz Reverse Bias=0V, f=1MHz
Min 6.0
±30 ±30
Typ
7.0 8.0 10.5 0.19
290 145
Max 5.0
1.0 9.8 13.0
33
350 180
Units
V V μA V V Ω A kV kV pF pF
AQ12 Electrical Characteristics (TOP=25ºC)
Parameter Reverse Standoff Voltage Breakdown Voltage Reverse Leakage Current
Clamp Voltage1
Dynamic Resistance2 Peak Pulse Current
ESD Withstand Voltage1
Diode Capacitance1
Symbol VRWM VBR ILEAK
VC
RDYN IPP
VESD
CI/O-GND CI/O-I/O
Test Conditions
IR=1μA IR=1mA VR=12V IPP=1A, tp=8/20µs, Pin 1 or Pin 2 to Pin 3 IPP=10A, tp=8/20µs, Pin 1 or Pin 2 to Pin 3 TLP, tp=100ns, Pin 1 or Pin 2 to Pin 3 tp=8/20µs IEC 61000-4-2 (Contact Discharge)
IEC 61000-4-2 (Air Discharge)
Reverse Bias=0V, f=1MHz Reverse Bias=0V, f=1MHz
Min 13.3
±30 ±30
Typ
14.2 16.0 20.0 0.25
110 55
Max 12.0
1.0 18.5 22.5
20
135 85
Units
V V μA V V Ω A kV kV pF pF
© 2019 Littelfuse, Inc. Specifications are subject to change without notice.
Revised: 09/17/19
TVS Diode Array (SPA®Diodes)
General Purpose ESD ProtAecQtxioxn-0-2AHQTGxxS-0e2rHieTsG Series
AQ15 Electrical Characteristics (TOP=25ºC)
Parameter Reverse Standoff Voltage Breakdown Voltage Reverse Leakage Current
Clamp Voltage1
Dynamic Resistance2 Peak Pulse Current
ESD Withstand Voltage1
Diode Capacitance1
Symbol VRWM VBR ILEAK
VC
RDYN IPP
VESD
CI/O-GND CI/O-I/O
Test Conditions
IR=1μA IR=1mA VR=15V IPP=1A, tp=8/20µs, Pin 1 or Pin 2 to Pin 3 IPP=10A, tp=8/20µs, Pin 1 or Pin 2 to Pin 3 TLP, tp=100ns, Pin 1 or Pin 2 to Pin 3 tp=8/20µs IEC 61000-4-2 (Contact Discharge)
IEC 61000-4-2 (Air Discharge)
Reverse Bias=0V, f=1MHz Reverse Bias=0V, f=1MHz
AQ24 Electrical Characteristics (TOP=25ºC)
Parameter Reverse Standoff Voltage Breakdown Voltage Reverse Leakage Current
Clamp Voltage1
Dynamic Resistance2 Peak Pulse Current
ESD Withstand Voltage1
Diode Capacitance1
Symbol VRWM VBR ILEAK
VC
RDYN IPP
VESD
CI/O-GND CI/O-I/O
Test Conditions
IR=1μA IR=1mA VR=24V IPP=1A, tp=8/20µs, Pin 1 or Pin 2 to Pin 3 IPP=5A, tp=8/20µs, Pin 1 or Pin 2 to Pin 3 TLP, tp=100ns, Pin 1 or Pin 2 to Pin 3 tp=8/20µs IEC 61000-4-2 (Contact Discharge)
IEC 61000-4-2 (Air D.