SN74S1053 BUS-TERMINATION Datasheet

SN74S1053 Datasheet, PDF, Equivalent


Part Number

SN74S1053

Description

16-BIT SCHOTTKY BARRIER DIODE BUS-TERMINATION

Manufacture

etcTI

Total Page 21 Pages
Datasheet
Download SN74S1053 Datasheet


SN74S1053
D Designed to Reduce Reflection Noise
D Repetitive Peak Forward Current to 200 mA
D 16-Bit Array Structure Suited for
Bus-Oriented Systems
D Package Options Include Plastic
Small-Outline Packages and Standard
Plastic 300-mil DIPs
description
This Schottky barrier diode bus-termination array
is designed to reduce reflection noise on memory
bus lines. This device consists of a 16-bit
high-speed Schottky diode array suitable for
clamping to VCC and/or GND.
The SN74S1053 is characterized for operation
from 0°C to 70°C.
SN74S1053
16-BIT SCHOTTKY BARRIER DIODE
BUS-TERMINATION ARRAY
SDLS017A – SEPTEMBER 1990 – REVISED AUGUST 1997
DW OR N PACKAGE
(TOP VIEW)
VCC
D01
D02
D03
D04
D05
D06
D07
D08
GND
1
2
3
4
5
6
7
8
9
10
20 VCC
19 D16
18 D15
17 D14
16 D13
15 D12
14 D11
13 D10
12 D09
11 GND
schematic diagrams
D01 D02 D03 D04 D05 D06 D07 D08 D09 D10 D11 D12 D13 D14 D15 D16
23
45
67
8 9 12 13 14 15 16 17 18 19
VCC VCC
1 20
10 11
GND GND
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
POST OFFICE BOX 655303 DALLAS, TEXAS 75265
Copyright © 1997, Texas Instruments Incorporated
1

SN74S1053
SN74S1053
16-BIT SCHOTTKY BARRIER DIODE
BUS-TERMINATION ARRAY
SDLS017A – SEPTEMBER 1990 – REVISED AUGUST 1997
absolute maximum ratings over operating free-air temperature range (unless otherwise noted)
Steady-state reverse voltage, VR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 V
Continuous forward current, IF: Any D terminal from GND or to VCC . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA
Total through all GND or VCC terminals . . . . . . . . . . . . . . . . . . . . . . . 170 mA
Repetitive peak forward current, IFRM: Any D terminal from GND or VCC . . . . . . . . . . . . . . . . . . . . . 200 mA
Total through all GND or VCC terminals . . . . . . . . . . . . . . . . . . 1.2 A
Continuous total power dissipation at (or below) 25°C free-air temperature (see Note 1) . . . . . . . . . . 625 mW
Operating free-air temperature range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0°C to 70°C
Storage temperature range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65°C to 150°C
Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and
functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
‡ These values apply for tw 100 µs, duty cycle 20%.
NOTE 1: For operation above 25°C free-air temperature, derate linearly at the rate of 5 m/W/°C.
electrical characteristics over recommended operating free-air temperature range (unless
otherwise noted)
single-diode operation (see Note 2)
PARAMETER
TEST CONDITIONS
MIN TYP§ MAX UNIT
VF Static forward voltage
VFM Peak forward voltage
IR Static reverse current
To VCC
From GND
To VCC
From GND
IF = 18 mA
IF = 50 mA
IF = 18 mA
IF = 50 mA
IF = 200 mA
VR = 7 V
0.85 1.05
1.05 1.3
0.75 0.95
0.95 1.2
1.45
5
5
V
V
µA
Ct Total capacitance
VR = 0 V,
VR = 2 V,
f = 1 MHz
f = 1 MHz
8 16
pF
48
§ All typical values are at VCC = 5 V, TA = 25°C.
NOTE 2: Test conditions and limits apply separately to each of the diodes. The diodes not under test are open-circuited during the measurement
of these characteristics.
multiple-diode operation
PARAMETER
TEST CONDITIONS
Ix Internal crosstalk current
Total IF current = 1 A,
Total IF current = 198 mA,
See Note 3
See Note 3
§ All typical values are at VCC = 5 V, TA = 25°C.
NOTE 3: Ix is measured under the following conditions with one diode static, and all others switching:
Switching diodes: tw = 100 µs, duty cycle = 20%
Static diode: VR = 5 V
The static diode input current is the internal crosstalk current Ix.
MIN TYP‡
0.8
0.02
MAX
2
0.2
UNIT
mA
switching characteristics, TA = 25°C (see Figures 1 and 2)
PARAMETER
TEST CONDITIONS
trr Reverse recovery time IF = 10 mA, IRM(REC) = 10 mA, IR(REC) = 1 mA,
RL = 100
MIN TYP MAX UNIT
8 16 ns
2 POST OFFICE BOX 655303 DALLAS, TEXAS 75265


Features D Designed to Reduce Reflection Noise D Repetitive Peak Forward Current to 200 mA D 16-Bit Array Structure Suited for Bus-Oriented Systems D Package Options Include Plastic Small-Outline Packages and Standard Plastic 300-mil DIPs descr iption This Schottky barrier diode bus- termination array is designed to reduce reflection noise on memory bus lines. This device consists of a 16-bit high-s peed Schottky diode array suitable for clamping to VCC and/or GND. The SN74S10 53 is characterized for operation from 0°C to 70°C. SN74S1053 16-BIT SCHOTT KY BARRIER DIODE BUS-TERMINATION ARRAY SDLS017A – SEPTEMBER 1990 – REVISED AUGUST 1997 DW OR N PACKAGE (TOP VIEW) VCC D01 D02 D03 D04 D05 D06 D07 D08 G ND 1 2 3 4 5 6 7 8 9 10 20 VCC 19 D16 18 D15 17 D14 16 D13 15 D12 14 D11 13 D10 12 D09 11 GND schematic diagrams D01 D02 D03 D04 D05 D06 D07 D08 D09 D10 D11 D12 D13 D14 D15 D16 23 45 67 8 9 12 13 14 15 16 17 18 19 VCC VCC 1 2 0 10 11 GND GND Please be aware that an important notice concerning.
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