BFG540

SMD Type TTrraannssiissttoorrss NPN 9GHz Wideband Transistor BFG540 ■ Features ● High power gain ● Low noise figure ● High transition frequency ● Gold metallization ensures excellent reliability. SOT-143 2.90±0.1 1.30±0.1 Unit:mm X 0~0.1 1.90 (Typ) 4 0.48 (max) 0.38 (min) 3 2.30±0.2 1.00±0.1 0.1(max) 0.55 (max) 0.45 (min) 0.15 (max) 0.09 (min) 1 0.88 (max) 0.78 (min) 1.70 (Typ) 2 0.45 (max) 0.15 (min) detail X 1.Collector 3.Base 2.Emitter 4.Emitter ■ Absolute Maximum Ratings Ta = 25℃ Parameter Collector - Base Voltage Collector - Emitter Voltage shorted base Emitter - Base Voltage Collector Current - Continuous Total power dissipation TS≤ 60 °C *1 Thermal resistance from junction to soldering point *1 Junction Temperature Storage Temperature Range *1: Ts is the temperature at the soldering point of the collector pin. Symbol VCBO VCES VEBO IC Ptot RthJS TJ Tstg Rating 20 15 2.5 120 400 290 150 -65 to 150 Unit V mA mW ℃/W ℃ www.kexin.com.cn 1 SMD Type TTrraannssiissttoorrss NPN 9GHz Wideband Transistor BFG540 ■ Electrical Characteristics Tj = 25℃, unless otherwise specified. Parameter Symbol Test Conditions Min Typ Max Unit Collector- base breakdown voltage VCBO Ic= 100 μA， IE= 0 20 Collector- emitter breakdown voltage VCEO Ic= 1 mA， IB= 0 15 V Emitter - base breakdown voltage VEBO IE= 100 μA， IC= 0 2.5 Collector-base cut-off current ICBO VCB= 8 V , IE= 0 50 nA DC current gain hFE VCE= 8V, IC= 40mA 60 250 Emitter capacitance Ce IC=ic=...