BFG540 Transistor Datasheet

BFG540 Datasheet, PDF, Equivalent


Part Number

BFG540

Description

NPN 9GHz Wideband Transistor

Manufacture

Kexin

Total Page 8 Pages
Datasheet
Download BFG540 Datasheet


BFG540
SMD Type
TTrraannssiissttoorrss
NPN 9GHz Wideband Transistor
BFG540
Features
High power gain
Low noise figure
High transition frequency
Gold metallization ensures
excellent reliability.
SOT-143
2.90±0.1
1.30±0.1
Unit:mm
X
0~0.1
1.90 (Typ)
4
0.48 (max)
0.38 (min)
3
2.30±0.2
1
0.88 (max)
0.78 (min)
1.70 (Typ)
2
0.45 (max)
0.15 (min)
detail X
1.Collector 3.Base
2.Emitter 4.Emitter
Absolute Maximum Ratings Ta = 25
Parameter
Collector - Base Voltage
Collector - Emitter Voltage shorted base
Emitter - Base Voltage
Collector Current - Continuous
Total power dissipation TS60 °C *1
Thermal resistance from junction to soldering point *1
Junction Temperature
Storage Temperature Range
*1: Ts is the temperature at the soldering point of the collector pin.
Symbol
VCBO
VCES
VEBO
IC
Ptot
RthJS
TJ
Tstg
Rating
20
15
2.5
120
400
290
150
-65 to 150
Unit
V
mA
mW
/W
www.kexin.com.cn 1

BFG540
SMD Type
TTrraannssiissttoorrss
NPN 9GHz Wideband Transistor
BFG540
Electrical Characteristics Tj = 25, unless otherwise specified.
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Collector- base breakdown voltage
VCBO Ic= 100 μAIE= 0
20
Collector- emitter breakdown voltage
VCEO Ic= 1 mAIB= 0
15 V
Emitter - base breakdown voltage
VEBO IE= 100 μAIC= 0
2.5
Collector-base cut-off current
ICBO VCB= 8 V , IE= 0
50 nA
DC current gain
hFE VCE= 8V, IC= 40mA
60 250
Emitter capacitance
Ce IC=ic=0; VEB=0.5V; f=1MHz
2
Collector capacitance
Cc IE=ie=0; VCB=8V; f=1MHz
0.9 pF
Feedback capacitance
Cre IC=0; VCB=8V; f=1MHz
0.5
Γs=Γopt; IC=10mA; VCE=8V;f=900MHz; Tamb=25
1.3 1.8
Noise figure
F Γs=Γopt; IC=40mA; VCE=8V;f=900MHz; Tamb=25
1.9 2.4
Power gain, maximum available
(Note 1)
GUM
Γs=Γopt; IC=10mA; VCE=8V;f=2GHz; Tamb=25
IC=40mA; VCE=8V; f=900MHz;Tamb=25
IC=40mA; VCE=8V; f=2GHz;Tamb=25
2.1
dB
18
11
Insertion power gain
|S21e|2 IC=40mA; VCE=8V; f=900MHz;Tamb=25
15 16
Output power at 1dB gain compression
Third order intercept point
PL1 IC=40mA; VCE=8V; RL=50Ω;f=900MHz; Tamb=25
ITO Note 2
21
34
dBm
Output voltage
VO Note 3
500 mV
Second order intermodulation distortion
d2 Note 4
-50 dB
Transition frequency
fT IC=40mA; VCE=8V; f=1GHz;Tamb=25
9 GHz
Notes
1. GUM is the maximum unilateral power gain, assuming s12 is zero and
2. VCE = 8 V; IC = 40 mA; RL = 50 ; Tamb = 25 °C;
GUM = 10 log -(--1-----------s---1---1---s-2---2)--1(---1-2----------s---2--2-----2---)
dB.
fp = 900 MHz; fq = 902 MHz;
measured at f(2p q) = 898 MHz and f(2q p) = 904 MHz.
3. dim = 60 dB (DIN 45004B); IC = 40 mA; VCE = 8 V; ZL = ZS = 75 ; Tamb = 25 °C;
Vp = VO; Vq = VO 6 dB; Vr = VO 6 dB;
fp = 795.25 MHz; fq = 803.25 MHz; fr = 805.25 MHz;
measured at f(p + q r) = 793.25 MHz.
4. IC = 40 mA; VCE = 8 V; VO = 275 mV; Tamb = 25 °C;
fp = 250 MHz; fq = 560 MHz; measured at f(p + q) = 810 MHz.
2 www.kexin.com.cn


Features SMD Type TTrraannssiissttoorrss NPN 9G Hz Wideband Transistor BFG540 ■ Feat ures ● High power gain ● Low noise figure ● High transition frequency Gold metallization ensures excellent reliability. SOT-143 2.90±0.1 1.30± 0.1 Unit:mm X 0~0.1 1.90 (Typ) 4 0.4 8 (max) 0.38 (min) 3 2.30±0.2 1.00± 0.1 0.1(max) 0.55 (max) 0.45 (min) 0.15 (max) 0.09 (min) 1 0.88 (max) 0.78 (m in) 1.70 (Typ) 2 0.45 (max) 0.15 (min ) detail X 1.Collector 3.Base 2.Emitter 4.Emitter ■ Absolute Maximum Rating s Ta = 25℃ Parameter Collector - Bas e Voltage Collector - Emitter Voltage s horted base Emitter - Base Voltage Coll ector Current - Continuous Total power dissipation TS≤ 60 °C *1 Thermal res istance from junction to soldering poin t *1 Junction Temperature Storage Tempe rature Range *1: Ts is the temperature at the soldering point of the collector pin. Symbol VCBO VCES VEBO IC Ptot Rt hJS TJ Tstg Rating 20 15 2.5 120 400 2 90 150 -65 to 150 Unit V mA mW ℃/W ℃ www.kexin.com.cn 1 SMD Type TTrraannssiisst.
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