FDD9410-F085

FDD9410-F085 N-Channel Power Trench® MOSFET FDD9410-F085 N-Channel Power Trench® MOSFET 40 V, 50 A, 4.1 mΩ Features „ Typ rDS(on) = 3.5 mΩ at VGS = 10V, ID = 50 A „ Typ Qg(tot) = 23.5 nC at VGS = 10V, ID = 50 A „ UIS Capability „ RoHS Compliant „ Qualified to AEC Q101 Applications „ Automotive Engine Control „ Powertrain Management „ Solenoid and Motor Drivers „ Integrated Starter/alternator „ Primary Switch for 12V Systems G S D DTO-P-2A5K2 (TO-252) G D S MOSFET Maximum Ratings TJ = 25°C unless otherwise noted Symbol Parameter VDSS VGS ID Drain to Source Voltage Gate to Source Voltage Drain Current - Continuous (VGS=10) (Note 1) Pulsed Drain Current EAS Single Pulse Avalanche Energy PD Power Dissipation Derate Above 25oC TJ, TSTG RθJC RθJA Operating and Storage Temperature Thermal Resistance Junction to Case Maximum Thermal Resistance Junction to Ambient TC = 25°C TC = 25°C (Note 2) (Note 3) Ratings 40 ±20 50 See Figure4 40 75 0.5 -55 to + 175 2 52 Units V V A mJ W W/oC oC oC/W oC/W Package Marking and Ordering Information Device Marking Device FDD9410 FDD9410-F085 Package D-PAK(TO-252) Reel Size 13” Tape Width 12mm Quantity 2500 units Notes: 1: Current is limited by bondwire configuration. 2: 3: RrmSatθotaiJnurAtngintiipsgnrgteThsJseeu=snruft2aem5cd°eCohfoe, tfrLheteh=iesj5ubd0narucastHiieon,dnIpA-otiSnons-=cm.a4oRs0ueAθnJa,tCinVndgDisDcogan=sueaa4-r01taoVni-ntade2mueprdbianiedbgnyoitnfdtdh2eueoscrizgmtoncarowlcprhhpeaieslerrigs.RtinaθgnJcaA...