EPC2815

eGaN® FET DATASHEET EPC2815 – Enhancement Mode Power Transistor VIRHDDDi,gSS(SOh3,N3)L4,e0Aa4VdmBWump Finish: NEW PRODUCT 95%Pb/5%Sn EPC2815 EFFICIENT POWER CONVERSION HAL Gallium Nitride is grown on Silicon Wafers and processed using standard CMOS equipment leveraging the infrastructure that has been developed over the last 55 years. GaN’s exceptionally high electron mobility and low temperature coefficient allows very low RDS(ON), while its lateral device structure and majority carrier diode provide exceptionally low QG and zero QRR. The end result is a device that can handle tasks where very high switching frequency, and low on-time are beneficial as well as those where on-state losses dominate. Maximum Ratings Drain-to-Source Voltage (Continuous) VDS Drain-to-Source Voltage (up to 10,000 5ms pulses at 125° C) 40 48 V V ID Continuous (TA = 25˚C,θJA = 13) Pulsed (25˚C, Tpulse = 300 µs) 33 150 A VGS Gate-to-Source Voltage Gate-to-Source Voltage 6 -5 V TJ Operating Temperature TSTG Storage Temperature -40 to 150 -40 to 150 ˚C PARAMETER Static Characteristics (TJ= 25˚C unless otherwise stated) BVDSS Drain-to-Source Voltage IDSS Drain Source Leakage IGSS Gate-Source Forward Leakage Gate-Source Reverse Leakage VGS(TH) RDS(ON) Gate Threshold Voltage Drain-Source On Resistance TEST CONDITIONS VGS = 0 V, ID = 500 µA VDS = 32 V, VGS = 0 V VGS = 5 V VGS = -5 V VDS = VGS, ID = 9 mA VGS = 5 V, ID = 33 A Source-Drain Characteristics (TJ= 25˚C unless otherwi...