EPC2815 Transistor Datasheet

EPC2815 Datasheet, PDF, Equivalent


Part Number

EPC2815

Description

Enhancement Mode Power Transistor

Manufacture

EPC

Total Page 6 Pages
Datasheet
Download EPC2815 Datasheet


EPC2815
eGaN® FET DATASHEET
EPC2815 – Enhancement Mode Power Transistor
VIRHDDDi,gSS(SOh3,N3)L4,e0Aa4VdmBWump
Finish:
NEW PRODUCT
95%Pb/5%Sn
EPC2815
EFFICIENT POWER CONVERSION
HAL
Gallium Nitride is grown on Silicon Wafers and processed using standard CMOS equipment leverag-
ing the infrastructure that has been developed over the last 55 years. GaN’s exceptionally high elec-
tron mobility and low temperature coefficient allows very low RDS(ON), while its lateral device structure
and majority carrier diode provide exceptionally low QG and zero QRR. The end result is a device that
can handle tasks where very high switching frequency, and low on-time are beneficial as well as
those where on-state losses dominate.
Maximum Ratings
Drain-to-Source Voltage (Continuous)
VDS Drain-to-Source Voltage (up to 10,000 5ms pulses at 125° C)
40
48
V
V
ID
Continuous (TA = 25˚C,θJA = 13)
Pulsed (25˚C, Tpulse = 300 µs)
33
150
A
VGS
Gate-to-Source Voltage
Gate-to-Source Voltage
6
-5
V
TJ Operating Temperature
TSTG Storage Temperature
-40 to 150
-40 to 150
˚C
PARAMETER
Static Characteristics (TJ= 25˚C unless otherwise stated)
BVDSS Drain-to-Source Voltage
IDSS Drain Source Leakage
IGSS
Gate-Source Forward Leakage
Gate-Source Reverse Leakage
VGS(TH)
RDS(ON)
Gate Threshold Voltage
Drain-Source On Resistance
TEST CONDITIONS
VGS = 0 V, ID = 500 µA
VDS = 32 V, VGS = 0 V
VGS = 5 V
VGS = -5 V
VDS = VGS, ID = 9 mA
VGS = 5 V, ID = 33 A
Source-Drain Characteristics (TJ= 25˚C unless otherwise stated)
VSD
Source-Drain Forward Voltage
IS = 0.5 A, VGS = 0 V, T = 25˚C
IS = 0.5 A, VGS = 0 V, T = 150˚C
All measurements were done with substrate shorted to source.
Thermal Characteristics
MIN
40
0.7
RθJC Thermal Resistance, Junction to Case
RθJB Thermal Resistance, Junction to Board
RθJA Thermal Resistance, Junction to Ambient (Note 1)
Note 1: RθJA is determined with the device mounted on one square inch of copper pad, single layer 2 oz copper on FR4 board.
See http://epc-co.com/epc/documents/product-training/Appnote_Thermal_Performance_of_eGaN_FETs.pdf for details.
EPC – EFFICIENT POWER CONVERSION CORPORATION | WWW.EPC-CO.COM | COPYRIGHT 2014 |
EPC2815 eGaN® FETs are supplied only in
passivated die form with solder bars
Applications
• High Speed DC-DC conversion
• Class D Audio
• Hard Switched and High Frequency Circuits
Benefits
• Ultra High Efficiency
• Ultra Low RDS(on)
• Ultra low QG
• Ultra small footprint
TYP MAX UNIT
V
200 400 µA
1.5
0.3
7
1.5
mA
1.4 2.5 V
3.2 4 mΩ
1.75
1.8
V
TYP
2.1 ˚C/W
15 ˚C/W
54 ˚C/W
| PAGE 1

EPC2815
eGaN® FET DATASHEET
EPC2815
PARAMETER
Dynamic Characteristics (TJ= 25˚C unless otherwise stated)
CISS Input Capacitance
COSS Output Capacitance
CRSS Reverse Transfer Capacitance
QG Total Gate Charge (VGS = 5 V)
QGD Gate to Drain Charge
QGS Gate to Source Charge
QOSS Output Charge
QRR Source-Drain Recovery Charge
All measurements were done with substrate shorted to source.
TEST CONDITIONS
VDS = 20 V, VGS = 0 V
VDS = 20 V, ID = 33 A
VDS = 20 V, VGS = 0 V
MIN TYP MAX UNIT
1100 1200
575 750 pF
60 70
10.5 11.6
2.2 2.7
3 3.5 nC
18.5 22
00
Figure 1: Typical Output Characteristics
150
100
VGS = 5
VGS = 4
VGS = 3
VGS = 2
50
Figure 2: Transfer Characteristics
150
25˚C
125˚C
VDS = 3V
100
50
0 0 0.5 1 1.5 2
VDS – Drain to Source Voltage (V)
Figure 3: RDS(on) vs VGS for Various Current
10
8
6
ID = 10 A
ID = 20 A
ID= 50 A
ID= 100 A
4
2
0 2 2.5 3 3.5 4 4.5 5 5.5
VGS – Gate to Source Voltage (V)
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5
VGS – Gate-to-Source Voltage (V)
Figure 4: RDS(on) vs VGS for Various Temperature
20
15
25˚C
125˚C
ID = 33 A
10
5
0 2 2.5 3 3.5 4 4.5 5 5.5
VGS – Gate-to-Source Voltage (V)
Figure 5: Capacitance
Figure 6: Gate Charge
EPC –1.8EFFICIENT POWER CONVERSION CORPORATION | WWW.EPC-CO.COM | COPYR5IGHT 2014 |
1.6
COSS = CGD + CSD
C =C +C
4.5
ID = 33 A
V = 20 V
| PAGE 2


Features eGaN® FET DATASHEET EPC2815 – Enhanc ement Mode Power Transistor VIRHDDDi,g SS(SOh3,N3)L4,e0Aa4VdmBWump Finish: N EW PRODUCT 95%Pb/5%Sn EPC2815 EFFICIEN T POWER CONVERSION HAL Gallium Nitride is grown on Silicon Wafers and process ed using standard CMOS equipment levera ging the infrastructure that has been d eveloped over the last 55 years. GaN’ s exceptionally high electron mobility and low temperature coefficient allows very low RDS(ON), while its lateral dev ice structure and majority carrier diod e provide exceptionally low QG and zero QRR. The end result is a device that c an handle tasks where very high switchi ng frequency, and low on-time are benef icial as well as those where on-state l osses dominate. Maximum Ratings Drain- to-Source Voltage (Continuous) VDS Drai n-to-Source Voltage (up to 10,000 5ms p ulses at 125° C) 40 48 V V ID Cont inuous (TA = 25˚C,θJA = 13) Pulsed (2 5˚C, Tpulse = 300 µs) 33 150 A VGS Gate-to-Source Voltage Gate-to-Source Voltage 6 -5 V TJ Operating Te.
Keywords EPC2815, datasheet, pdf, EPC, , Enhancement, Mode, Power, Transistor, PC2815, C2815, 2815, EPC281, EPC28, EPC2, Equivalent, stock, pinout, distributor, price, schematic, inventory, databook, Electronic, Components, Parameters, parts, cross reference, chip, Semiconductor, circuit, Electric, manual, substitute




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)