SSG4935P MOSFET Datasheet

SSG4935P Datasheet, PDF, Equivalent


Part Number

SSG4935P

Description

P-Ch Enhancement Mode Power MOSFET

Manufacture

SeCoS

Total Page 4 Pages
Datasheet
Download SSG4935P Datasheet


SSG4935P
Elektronische Bauelemente
SSG4935P
P-Ch Enhancement Mode Power MOSFET
-7.8 A, -30 V, RDS(ON) 21 m
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
These miniature surface mount MOSFETs
utilize high cell density process. Low RDS(on)
assures minimal power loss and conserves
energy, making this device ideal for use in
power management circuitry. Typical applications
are PWMDC-DC converters, power management
in portable and battery-powered products such as
computers, printers, battery charger, telecommunication
power system, and telephones power system.
FEATURES
Low RDS(on) provides higher efficiency and extends battery life.
Miniature SOP-8 surface mount package saves board space.
High power and current handling capability..
Extended VGS range (±25) for battery pack applications.
PRODUCT SUMMARY
VDS(V)
-30
PRODUCT SUMMARY
RDS(on) (m
21@VGS= -10V
35@VGS= -4.5V
ID(A)
-7.8
-6.0
SOP-8
B
A
HG
LD
M
C
JK
F
N
E
REF.
A
B
C
D
E
F
G
Millimeter
Min. Max.
5.80 6.20
4.80 5.00
3.80 4.00
0° 8°
0.40 0.90
0.19 0.25
1.27 TYP.
REF.
H
J
K
L
M
N
Millimeter
Min. Max.
0.35 0.49
0.375 REF.
45°
1.35 1.75
0.10 0.25
0.25 REF.
SD
GD
SD
GD
MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current a
Pulsed Drain Current b
Continuous Source Current (Diode Conduction) a
Total Power Dissipation a
Operating Junction & Storage Temperature Range
VDS
VGS
ID @ TA = 25°C
ID @ TA = 70°C
IDM
IS
PD @ TA = 25°C
PD @ TA = 70°C
TJ, TSTG
-30
±25
-7.8
-6.2
±30
-1.7
2.0
1.3
-55 ~ 150
THERMAL RESISTANCE RATINGS
Thermal Resistance Junction-ambient (Max.) a t10 sec
Steady State
RθJA
62.5
110
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature.
UNIT
V
V
A
A
A
A
W
W
°C
°C / W
°C / W
http://www.SeCoSGmbH.com/
25-Aug-2010 Rev. A
Any changes of specification will not be informed individually.
Page 1 of 4

SSG4935P
Elektronische Bauelemente
SSG4935P
P-Ch Enhancement Mode Power MOSFET
-7.8 A, -30 V, RDS(ON) 21 m
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
PARAMETER
SYMBO MIN. TYP. MAX. UNIT
TEST CONDITIONS
STATIC
Gate Threshold Voltage
Gate-Body Leakage Current
Zero Gate Voltage Drain Current
On-State Drain Current a
Drain-Source On-Resistance a
Forward Transconductance a
Diode Forward Voltage
VGS(th)
IGSS
IDSS
ID(on)
RDS(ON)
gfs
VSD
-1 - -3
- - ±100
- - -1
- - -5
-40 -
-
- 19 21
- 28 35
- 22 -
- -0.7 -1.2
DYNAMIC b
Total Gate Charge
Qg - 15 -
Gate-Source Charge
Qgs - 5.2 -
Gate-Drain Charge
Qgd - 5.8 -
Turn-On Delay Time
Td(on)
-
15
-
Rise Time
Tr - 12 -
Turn-Off Delay Time
Td(off)
-
62
-
Fall Time
Tf - 46 -
Notes
a. Pulse testPW 300μs duty cycle 2%.
b. Guaranteed by design, not subject to production testing.
V VDS= VGS, ID= -250μA
nA VDS= 0V, VGS= ±25V
μA VDS= -24V, VGS= 0V
μA VDS= -24V, VGS= 0V, TJ=55°C
A VDS= -5V, VGS= -10V
VGS= -10V, ID= -7.8A
m
VGS= -4.5V, ID= -6.0A
S VDS= -10V, ID= -7.8A
V IS= -1.7A, VGS= 0V
ID= -7.8A
nC VDS= -15V
VGS= -5V
VDD= -15V
ID= -1A
nS
VGEN= -10V
RL= 6
http://www.SeCoSGmbH.com/
25-Aug-2010 Rev. A
Any changes of specification will not be informed individually.
Page 2 of 4


Features Elektronische Bauelemente SSG4935P P-Ch Enhancement Mode Power MOSFET -7.8 A, -30 V, RDS(ON) 21 m RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION These miniature surface mount MOSFETs utilize high cell density process. Low RDS(on) assures minimal power loss and conserv es energy, making this device ideal for use in power management circuitry. Typ ical applications are PWMDC-DC converte rs, power management in portable and ba ttery-powered products such as computer s, printers, battery charger, telecommu nication power system, and telephones p ower system. FEATURES  Low RDS(on) provides higher efficiency and extends battery life.  Miniature SOP-8 surfa ce mount package saves board space.  High power and current handling capabi lity..  Extended VGS range (±25) fo r battery pack applications. PRODUCT S UMMARY VDS(V) -30 PRODUCT SUMMARY RDS (on) (m 21@VGS= -10V 35@VGS= -4.5 V ID(A) -7.8 -6.0 SOP-8 B A HG LD M C JK F N E REF. A B C D E F G Millimet.
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