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SSG4935P

SeCoS

P-Channel MOSFET

Elektronische Bauelemente SSG4935P P-Ch Enhancement Mode Power MOSFET -7.8 A, -30 V, RDS(ON) 21 m RoHS Compliant Prod...


SeCoS

SSG4935P

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Description
Elektronische Bauelemente SSG4935P P-Ch Enhancement Mode Power MOSFET -7.8 A, -30 V, RDS(ON) 21 m RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION These miniature surface mount MOSFETs utilize high cell density process. Low RDS(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. Typical applications are PWMDC-DC converters, power management in portable and battery-powered products such as computers, printers, battery charger, telecommunication power system, and telephones power system. FEATURES  Low RDS(on) provides higher efficiency and extends battery life.  Miniature SOP-8 surface mount package saves board space.  High power and current handling capability..  Extended VGS range (±25) for battery pack applications. PRODUCT SUMMARY VDS(V) -30 PRODUCT SUMMARY RDS(on) (m 21@VGS= -10V 35@VGS= -4.5V ID(A) -7.8 -6.0 SOP-8 B A HG LD M C JK F N E REF. A B C D E F G Millimeter Min. Max. 5.80 6.20 4.80 5.00 3.80 4.00 0° 8° 0.40 0.90 0.19 0.25 1.27 TYP. REF. H J K L M N Millimeter Min. Max. 0.35 0.49 0.375 REF. 45° 1.35 1.75 0.10 0.25 0.25 REF. SD GD SD GD MAXIMUM RATINGS (TA = 25°C unless otherwise specified) PARAMETER SYMBOL RATINGS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current a Pulsed Drain Current b Continuous Source Current (Diode Conduction) a Total Power Dissipation a Operating Junction & Storage Temperature Range VDS VGS ID @ TA...




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