SID05N10

Elektronische Bauelemente SID05N10 5A , 100V , RDS(ON) 170 mΩ N-Channel Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen-free DESCRIPTION The SID05N10 provide the designer with the best combination of fast switching, The TO-251 package is universally preferred for all commercial-industrial surface mount applications. The device is suited for charger, industrial and consumer environment. TO-251 FEATURES Low On-resistance Fast Switching Speed Low-voltage drive (4V) Wide SOA (safe operating area) Easily designed drive circuits Easy to parallel MARKING: 05N10 Date code 1 Gate 2 Drain 3 Source A B GE K F C D H MJ P REF. A B C D E F Millimeter Min. Max. 6.40 6.80 5.20 5.50 2.20 2.40 0.45 0.55 6.80 7.20 7.20 7.80 REF. G H J K M P Millimeter Min. Max. 5.40 5.80 0.90 1.50 2.30 0.60 0.90 0.50 0.70 0.45 0.60 ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current1 Total Power Dissipation @ TC = 25°C Thermal Resistance Junction-case Thermal Resistance Junction-ambient TC=25°C TC=100°C Linear Derating Factor Operating Junction & Storage temperature Symbol VDS VGS ID IDM PD RθJC RθJA TJ, TSTG Ratings 100 ±20 5 3.75 20 20 6.25 110 0.16 -55~150 Unit V V A A A W °C / W °C / W W / °C °C http://www.SeCoSGmbH.com/ 26-Dec-2011 Rev. A Any changes of specification will not be informed individually. Page 1 of 4 Elektronische Bauelemente SID05N10 5A , 100V , RDS(ON) 17...