SSG4490N

Elektronische Bauelemente SSG4490N 5.2 A, 100 V, RDS(ON) 78 m N-Ch Enhancement Mode Power MOSFET DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management In portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. FEATURES  Low RDS(on) provides higher efficiency and extends battery life.  Low thermal impedance copper leadframe SOIC-8 saves board space.  Fast switching speed.  High performance trench technology. PACKAGE INFORMATION Package MPQ SOP-8 2.5K LeaderSize 13’ inch SOP-8 B A HG LD M C JK F N E REF. A B C D E F G Millimeter Min. Max. 5.80 6.20 4.80 5.00 3.80 4.00 0° 8° 0.40 0.90 0.19 0.25 1.27 TYP. REF. H J K L M N Millimeter Min. Max. 0.35 0.49 0.375 REF. 45° 1.35 1.75 0.10 0.25 0.25 REF. SD SD SD GD MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 1 Pulsed Drain Current 2 Continuous Source Current (Diode Conduction) 1 Total Power Dissipation 1 Operating Junction & Storage Temperature Range VDS VGS ID @ TA = 25°C ID @ TA = 70°C IDM IS PD @ TA = 25°C PD @ TA = 70°C TJ, TSTG Thermal Resistance Ratings Thermal Resistance Junction-Case (Max.) 1 t≦5 sec RθJC Thermal Resistance Junction-ambient (Max.) 1 t≦5 sec RθJA Note...