S2N7002KDW MOSFET Datasheet

S2N7002KDW Datasheet, PDF, Equivalent


Part Number

S2N7002KDW

Description

Dual N-Channel MOSFET

Manufacture

SeCoS

Total Page 2 Pages
Datasheet
Download S2N7002KDW Datasheet


S2N7002KDW
Elektronische Bauelemente
S2 7002KDW
115mA, 60V
Dual -Channel MOSFET
FEATURES
Low On-Resistance
Fast Switching Speed
Low-Voltage Drive
Easily Designed Drive Circuits
ESD Protected: 2KV
MARKING
RS
RoHS Compliant Product
A Suffix of “-C” specifies halogen & lead-free
PACKAGE INFORMATION
Package
MPQ
SOT-363
3K
Leader Size
7 inch
ORDER INFORMATION
Part Number
Type
S2N7002KDW
Lead (Pb)-free
S2N7002KDW-C Lead (Pb)-free and Halogen-free
SOT-363
A
E
L
B
F CH
DG K J
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
1.80
1.80
1.15
2.20
2.45
1.35
0.80 1.10
1.10 1.50
0.10 0.35
REF.
G
H
J
K
L
Millimeter
Min. Max.
0.100 REF.
0.525 REF.
0.08 0.25
0.650 TYP.
MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Symbol
Drain-Source Voltage
VDSS
Gate-Source Voltage
VGSS
Continuous Drain Current
Pulsed Drain Current 1
ID
IDP
Continuous Reverse Drain Current
Pulsed Reverse Drain Current 1
Total Power Dissipation 2
IDR
IDRP
PD
Operating Junction & Storage Temperature Range
TJ, TSTG
Ratings
60
±20
115
800
115
800
225
-55~150
Unit
V
V
mA
mA
mA
mA
mW
°C
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)
Parameter
Symbol Min.
Typ.
Max.
Drain-Source Breakdown Voltage
V(BR)DSS
60
Zero Gate Voltage Drain Current
IDSS
-
Gate-Source Leakage
IGSS
-
Gate Threshold Voltage
VGS(th)
1
Static Drain-Source On-Resistance RDS(ON)
-
-
Forward Transfer Admittance 3
Turn-on Delay Time 3
Turn-on Rise Time 3
Turn-off Delay Time 3
Turn-off Fall Time 3
gfs
Td(on)
Tr(on)
Td(off)
Tr(off)
-
-
-
-
-
Input Capacitance
Ciss -
Output Capacitance
Coss
-
Reverse Transfer Capacitance Crss -
Notes:
1. Pw10µs, Duty cycle1%.
2. When mounted on a 1x0.75x0.062 inch glass epoxy board.
3. Pw300µs, Duty cycle1%.
http://www.SeCoSGmbH.com/
-
-
-
1.85
-
-
80
12
14
20
22
25
10
3
-
1
±10
2.5
7.5
8.5
-
-
-
-
-
-
-
-
21-Feb-2018 Rev. A
Unit
V
µA
µA
V
mS
nS
pF
Test Conditions
VGS=0, ID=10µA
VDS=60V, VGS=0
VDS=0, VGS= ±20V
VDS=10V, ID=1mA
VGS=10V, ID=0.5A
VGS=4.5V, ID=0.2A
VDS=10V, ID=0.2A
ID=0.2A, VDD=30V
VGS=10V, RL=103Ω
RG=6Ω
VDS=25V
VGS=0
f=1MHz
Any changes of specification will not be informed individually.
Page 1 of 2

S2N7002KDW
Elektronische Bauelemente
CHARACTERISTIC CURVES
S2 7002KDW
115mA, 60V
Dual -Channel MOSFET
http://www.SeCoSGmbH.com/
21-Feb-2018 Rev. A
Any changes of specification will not be informed individually.
Page 2 of 2


Features Elektronische Bauelemente S2 7002KDW 11 5mA, 60V Dual -Channel MOSFET FEATURES Low On-Resistance Fast Switching Speed Low-Voltage Drive Easily Designed Driv e Circuits ESD Protected: 2KV MARKING R S RoHS Compliant Product A Suffix of -C” specifies halogen & lead-free PACKAGE INFORMATION Package MPQ SOT- 363 3K Leader Size 7 inch ORDER INFO RMATION Part Number Type S2N7002KDW Lead (Pb)-free S2N7002KDW-C Lead (Pb) -free and Halogen-free SOT-363 A E L B F CH DG K J REF. A B C D E F Millime ter Min. Max. 1.80 1.80 1.15 2.20 2.4 5 1.35 0.80 1.10 1.10 1.50 0.10 0.35 REF. G H J K L Millimeter Min. Max. 0.100 REF. 0.525 REF. 0.08 0.25 8° 0.6 50 TYP. MAXIMUM RATINGS (TA=25°C unle ss otherwise specified) Parameter Sym bol Drain-Source Voltage VDSS Gate-S ource Voltage VGSS Continuous Drain C urrent Pulsed Drain Current 1 ID IDP Continuous Reverse Drain Current Pulsed Reverse Drain Current 1 Total Power Di ssipation 2 IDR IDRP PD Operating Junction & Storage Temperature Ra.
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