SID9973

Elektronische Bauelemente SID9973 14A, 60V,RDS(ON)80m N-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product Description The SID9973 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-251 is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. Features * Low Gate Charge * Simple Drive Requirement TO-251 6.6±0.2 5.3±0.2 2.3±0.1 0.5±0.05 5.6±0.2 7.0±0.2 7.0±0.2 1.2±0.3 0.75±0.15 0.6±0.1 G 2.3REF. DS 0.5±0.1 Dimensions in millimeters D Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current,VGS@10V Continuous Drain Current,VGS@10V Pulsed Drain Current1 Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Marking Code: 9973 G XXXX(Date Code) S Symbol VDS VGS ID@TC=25oC ID@TC=100oC IDM PD@TC=25oC Tj, Tstg Ratings 60 ± 20 14 9 40 27 0.22 -55~+150 Unit V V A A A W W / oC oC Thermal Data Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient http://www.SeCoSGmbH.com/ 01-Jun-2002 Rev. A Max. Max. Symbol Rthj-c Rthj-a Ratings 4.5 110 Unit oC /W oC /W Any changing of specification will not be informed individual Page 1 of 4 Elektronische Bauelemente SID9973 14A, 60V,RDS(ON)80m N-Channel Enhancement Mode Power Mos.FET Electrical Characteristics( Tj=25oC Unless othe...