SSD04N60J

Elektronische Bauelemente SSD04N60J 4A , 600V , RDS(ON) 3Ω N-Ch Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen free DESCRIPTION This advanced high voltage MOSFET is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode with a fast recovery time. Designed for high voltage, high speed switching applications such as power suppliers, converters, power motor control, and bridge circuits. FEATURES High Current Rating Lower RDS(ON) Lower Capacitance Lower Total Gate Charge Tighter VSD Specifications Avalanche Energy Specified PACKAGE INFORMATION Package MPQ TO-252 2.5K Leader Size 13 inch ORDER INFORMATION Part Number Type SSD04N60J Lead (Pb)-free SSD04N60J-C Lead (Pb)-free and Halogen-free TO-252 A BC D GE K HF MJ N O P REF. Millimeter Min. Max. REF. Millimeter Min. Max. A 6.35 6.90 J 2.186 2.386 B 4.95 5.50 K 0.64 1.14 C 2.10 2.50 M 0.50 1.14 D 0.43 0.9 N 1.3 1.8 E 6.0 7.5 O 0 0.13 F 2.90 REF P 0.58REF. G 5.40 6.40 H 0.60 1.20 1 Gate 2 Drain 3 Source ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current ID Continuous Drain-Source Diode Forward Current Maximum Lead Temperature for Soldering Purposes@1/8’’ from case for 5 seconds IS TL Operating Junction and Storage Temperature Range TJ, TSTG Thermal Resistance ...