SSD40P04J

Elektronische Bauelemente SSD40P04J -40A, -40V, RDS(ON) 14 mΩ P-Ch Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen free DESCRIPTION SSD40P04J uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is well suited for high current load applications. FEATURES High density cell design for ultra low RDS(ON) Fully characterized avalanche voltage and current Good stability and uniformity with high EAS Excellent package for good heat dissipation Special process technology for high ESD capability APPLICATIONS Power switching applications Hard switched and high frequency circuits Uninterruptible power supply MARKING CJU40P04 Date Code PACKAGE INFORMATION Package MPQ TO-252 2.5K Leader Size 13 inch TO-252(D-Pack) A BC D GE K HF MJ N O P REF. Millimeter Min. Max. REF. Millimeter Min. Max. A 6.35 6.90 J 2.336 REF. B 4.95 5.50 K 0.89 REF. C 2.10 2.50 M 0.50 1.14 D 0.43 0.9 N 1.3 1.8 E 6.0 7.5 O 0 0.13 F 2.90 REF P 0.58 REF. G 5.40 6.40 H 0.60 1.20 1 Gate 2 Drain ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Single Pulsed Avalanche Energy 1 Power Dissipation Thermal Resistance from Junction to Ambient VDS VGS ID IDM EAS PD RθJA Lead Temperature for Soldering Purposes@ 1/8’’ from case for 10s TL Junction and Storage Temperature Range Notes: 1. E...