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SDT3005 Dataheets PDF



Part Number SDT3005
Manufacturers SeCoS
Logo SeCoS
Description N-Channel MOSFET
Datasheet SDT3005 DatasheetSDT3005 Datasheet (PDF)

Elektronische Bauelemente SDT3005 5A, 30V, RDS(ON) 42 mΩ N-Channel Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION SDT3005 provides designers with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. DFN2*2-6J package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. DFN2*2-6J .

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Elektronische Bauelemente SDT3005 5A, 30V, RDS(ON) 42 mΩ N-Channel Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION SDT3005 provides designers with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. DFN2*2-6J package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. DFN2*2-6J FEATURES TrenchFET power MOSFET Low RDS(on) Typical ESD protection APPICTIONS Load switch and battery protection MARKING 3005 PACKAGE INFORMATION Package MPQ DFN2*2-6J 3K Leader Size 7 inch REF. A B C D E F G Millimeter Min. Max. 1.924 2.076 1.924 2.076 0.46 0.66 0.65 TYP. 0.20 0.40 0.80 1.00 0.174 0.326 REF. H I J K L M Millimeter Min. Max. 0.20 - 0.85 1.05 0.70 0.90 0.20 0.40 0.203REF 0.00 0.05 ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current 1 Thermal Resistance from Junction to Ambient Operating Junction and Storage Temperature VDS VGS ID IDM RθJA TJ, TSTG Rating 30 ±10 5 20 250 150, -55~150 Unit V V A A °C / W °C http://www.SeCoSGmbH.com/ 01-Jul-2016 Rev. A Any changes of specification will not be informed individually. Page 1 of 3 Elektronische Bauelemente SDT3005 5A, 30V, RDS(ON) 42 mΩ N-Channel Enhancement Mode Power MOSFET ELECTRICAL CHARACTERISTICS (TJ=25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Static Drain-Source Breakdown Voltage Gate-Source Leakage Current BVDSS IGSS 30 - -- ±10 Drain-Source Leakage Current Gate-Threshold Voltage 2 Forward Transconductance 2 Diode Forward Voltage 2 IDSS VGS(th) gfs VSD 0.6 - 15 - 1 1 1 Static Drain-Source On-Resistance 2 RDS(ON) - - 42 - 44 - - 50 Dynamic Characteristics Input Capacitance Output Capacitance Ciss - 245 - Coss - 35 - Reverse Transfer Capacitance Crss - 20 Switching Characteristics - Total Gate Charge Gate-Source Charge Qg - 10 Qgs - 0.5 - Gate-Drain Charge Qgd - 1 - Turn-On Delay Time Rise Time Td(on) - 2 - Tr - 3.5 - Turn-Off Delay Time Td(off) - 22 - Fall Time Tf - Notes: 1. Repetitive rating:Pulse width limited by junction temperature. 2. Pulse Test: Pulse With≦300µs, duty cycle≦2%. 3.5 - Unit Test Condition V VGS=0, ID=250µA µA VGS= ±10V, VDS=0 µA VDS=30V, VGS=0 V VDS=VGS, ID=250µA S VDS=5V, ID=4A V IS=1A, VGS=0 VDS=10V, ID=5A mΩ VDS=4.5V, ID=5A VGS=2.5V, ID=4A VDS=15V pF VGS=0V f=1MHz ID=4A nC VDS=15V VGS=10V VDD=15V nS VGS=10V RL= 3.75Ω RGEN=3Ω http://www.SeCoSGmbH.com/ 01-Jul-2016 Rev. A Any changes of specification will not be informed individually. Page 2 of 3 Elektronische Bauelemente CHARACTERISTIC CURVES SDT3005 5A, 30V, RDS(ON) 42 mΩ N-Channel Enhancement Mode Power MOSFET http://www.SeCoSGmbH.com/ 01-Jul-2016 Rev. A Any changes of specification will n.


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