Document
Elektronische Bauelemente
SDT3005
5A, 30V, RDS(ON) 42 mΩ N-Channel Enhancement Mode Power MOSFET
RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
SDT3005 provides designers with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. DFN2*2-6J package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.
DFN2*2-6J
FEATURES
TrenchFET power MOSFET Low RDS(on) Typical ESD protection
APPICTIONS
Load switch and battery protection
MARKING
3005
PACKAGE INFORMATION
Package
MPQ
DFN2*2-6J
3K
Leader Size 7 inch
REF.
A B C D E F G
Millimeter Min. Max. 1.924 2.076 1.924 2.076 0.46 0.66
0.65 TYP. 0.20 0.40 0.80 1.00 0.174 0.326
REF.
H I J K L M
Millimeter
Min. Max.
0.20
-
0.85 1.05
0.70 0.90
0.20 0.40
0.203REF
0.00 0.05
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Symbol
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current 1 Thermal Resistance from Junction to Ambient Operating Junction and Storage Temperature
VDS VGS ID IDM RθJA TJ, TSTG
Rating 30 ±10 5 20 250
150, -55~150
Unit V V A A
°C / W °C
http://www.SeCoSGmbH.com/
01-Jul-2016 Rev. A
Any changes of specification will not be informed individually.
Page 1 of 3
Elektronische Bauelemente
SDT3005
5A, 30V, RDS(ON) 42 mΩ N-Channel Enhancement Mode Power MOSFET
ELECTRICAL CHARACTERISTICS (TJ=25°C unless otherwise specified)
Parameter
Symbol
Min.
Typ.
Max.
Static
Drain-Source Breakdown Voltage Gate-Source Leakage Current
BVDSS IGSS
30 -
-- ±10
Drain-Source Leakage Current Gate-Threshold Voltage 2 Forward Transconductance 2 Diode Forward Voltage 2
IDSS VGS(th)
gfs VSD
0.6
-
15 -
1 1 1
Static Drain-Source On-Resistance 2
RDS(ON)
-
- 42 - 44
- - 50
Dynamic Characteristics
Input Capacitance Output Capacitance
Ciss - 245 -
Coss
-
35
-
Reverse Transfer Capacitance
Crss
-
20
Switching Characteristics
-
Total Gate Charge Gate-Source Charge
Qg - 10 Qgs - 0.5 -
Gate-Drain Charge
Qgd - 1 -
Turn-On Delay Time Rise Time
Td(on)
-
2
-
Tr - 3.5 -
Turn-Off Delay Time
Td(off)
-
22
-
Fall Time
Tf -
Notes: 1. Repetitive rating:Pulse width limited by junction temperature. 2. Pulse Test: Pulse With≦300µs, duty cycle≦2%.
3.5
-
Unit Test Condition
V VGS=0, ID=250µA µA VGS= ±10V, VDS=0 µA VDS=30V, VGS=0 V VDS=VGS, ID=250µA S VDS=5V, ID=4A V IS=1A, VGS=0
VDS=10V, ID=5A mΩ VDS=4.5V, ID=5A
VGS=2.5V, ID=4A
VDS=15V pF VGS=0V
f=1MHz
ID=4A nC VDS=15V
VGS=10V
VDD=15V
nS
VGS=10V RL= 3.75Ω
RGEN=3Ω
http://www.SeCoSGmbH.com/
01-Jul-2016 Rev. A
Any changes of specification will not be informed individually.
Page 2 of 3
Elektronische Bauelemente CHARACTERISTIC CURVES
SDT3005
5A, 30V, RDS(ON) 42 mΩ N-Channel Enhancement Mode Power MOSFET
http://www.SeCoSGmbH.com/
01-Jul-2016 Rev. A
Any changes of specification will n.