JANTX2N7221U MOSFET Datasheet

JANTX2N7221U Datasheet, PDF, Equivalent


Part Number

JANTX2N7221U

Description

POWER MOSFET

Manufacture

International Rectifier

Total Page 7 Pages
Datasheet
Download JANTX2N7221U Datasheet


JANTX2N7221U
PD-91550D
POWER MOSFET
SURFACE MOUNT(SMD-1)
Product Summary
Part Number RDS(on)
IRFN340
0.55
ID
10A
IRFN340
JANTX2N7221U
JANTXV2N7221U
REF:MIL-PRF-19500/596
400V, N-CHANNEL
HEXFET® MOSFET TECHNOLOGY
HEXFET® MOSFET technology is the key to International
Rectifier’s advanced line of power MOSFET transistors. The
efficient geometry design achieves very low on-state re-
sistance combined with high transconductance. HEXFET
transistors also feature all of the well-established advan-
tages of MOSFETs, such as voltage control, very fast switch-
ing, ease of paralleling and electrical parameter temperature
stability. They are well-suited for applications such as switch-
ing power supplies, motor controls, inverters, choppers,
audio amplifiers, high energy pulse circuits, and virtually
any application where high reliability is required. The
HEXFET transistor’s totally isolated package eliminates the
need for additional isolating material between the device
and the heatsink. This improves thermal efficiency and
reduces drain capacitance.
SMD-1
Features:
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Electrically Isolated
n Surface Mount
n Dynamic dv/dt Rating
n Light-weight
Absolute Maximum Ratings
ID @ VGS = 10V, TC = 25°C
ID @ VGS = 10V, TC = 100°C
IDM
PD @ TC = 25°C
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current À
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
Operating Junction
Storage Temperature Range
Package Mounting Surface Temperature
Weight
For footnotes refer to the last page
www.irf.com
10
6.0
40
125
1.0
±20
650
10
12.5
4.0
-55 to 150
300(for 5 seconds)
2.6 (Typical)
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
g
1
03/10/11

JANTX2N7221U
IRFN340
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
BVDSS
Drain-to-Source Breakdown Voltage
BVDSS/TJ Temperature Coefficient of Breakdown
Voltage
RDS(on)
Static Drain-to-Source On-State
Resistance
VGS(th)
gfs
IDSS
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
Min
400
2.0
4.9
IGSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Typ Max Units
Test Conditions
——
V
VGS = 0V, ID = 1.0mA
0.46 — V/°C Reference to 25°C, ID = 1.0mA
— 0.55
— 0.70
— 4.0
——
— 25
— 250
— 100
— -100
— 65
— 14
— 40.5
— 25
— 92
— 79
— 58
4.0 —
1400
3500
2300
VGS = 10V, ID = 6.0A
VGS = 10V, ID = 10A
Ã
V VDS = VGS, ID = 250µA
S VDS =15V, IDS = 6.0A Ã
µA
VDS= 320V ,VGS=0V
VDS = 320V,
VGS = 0V, TJ = 125°C
nA
VGS = 20V
VGS = -20V
VGS =10V, ID = 10A
nC VDS = 200V
VDD = 200V, ID = 10A,
ns VGS =10V, RG = 2.35
nH Measured from the center of drain
pad to center of source pad.
VGS = 0V, VDS = 25V
pF f = 1.0MHz
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
Test Conditions
IS Continuous Source Current (Body Diode) — —
ISM Pulse Source Current (Body Diode) À
——
10
40
A
VSD Diode Forward Voltage
— — 1.5 V
trr Reverse Recovery Time
— — 600 ns
QRR Reverse Recovery Charge
— — 5.6 µC
Tj = 25°C, IS = 10A, VGS = 0V Ã
Tj = 25°C, IF = 10A, di/dt 100A/µs
VDD 30V Ã
ton Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
RthJC
RthJ-PCB
Junction-to-Case
Junction-to-PC board
Min Typ Max Units
4.0
1.0
°C/W
Test Conditions
Soldered to a copper-clad PC board
Note: Corresponding Spice and Saber models are available on International Rectifier Web site.
For footnotes refer to the last page
2 www.irf.com


Features PD-91550D POWER MOSFET SURFACE MOUNT(SM D-1) Product Summary Part Number RDS( on) IRFN340 0.55 Ω ID 10A IRFN340 JANTX2N7221U JANTXV2N7221U REF:MIL-PRF -19500/596 400V, N-CHANNEL HEXFET® MOS FET TECHNOLOGY HEXFET® MOSFET technol ogy is the key to International Rectifi er’s advanced line of power MOSFET tr ansistors. The efficient geometry desig n achieves very low on-state resistance combined with high transconductance. H EXFET transistors also feature all of t he well-established advantages of MOSFE Ts, such as voltage control, very fast switching, ease of paralleling and elec trical parameter temperature stability. They are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio a mplifiers, high energy pulse circuits, and virtually any application where hig h reliability is required. The HEXFET t ransistor’s totally isolated package eliminates the need for additional isol ating material between the device and the heatsink. This improves therm.
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