FGH40T120SMD IGBT Datasheet

FGH40T120SMD Datasheet, PDF, Equivalent


Part Number

FGH40T120SMD

Description

IGBT

Manufacture

ON Semiconductor

Total Page 10 Pages
Datasheet
Download FGH40T120SMD Datasheet


FGH40T120SMD
IGBT - Field Stop, Trench
1200 V, 40 A
FGH40T120SMD,
FGH40T120SMD-F155
Description
Using innovative field stop trench IGBT technology,
ON Semiconductor’s new series of field stop trench IGBTs offer
the optimum performance for hard switching application such as solar
inverter, UPS, welder and PFC applications.
Features
FS Trench Technology, Positive Temperature Coefficient
High Speed Switching
Low Saturation Voltage: VCE(sat) = 1.8 V @ IC = 40 A
100% of the Parts tested for ILM(1)
High Input Impedance
These Devices are PbFree and are RoHS Compliant
Applications
Solar Inverter, Welder, UPS & PFC applications
www.onsemi.com
C
G
E
EC
G
TO2473LD
CASE 340CK
TO2473LD
CASE 340CH
MARKING DIAGRAMS
$Y&Z&3&K
FGH40T120
SMD
$Y&Z&3&K
FGH40T120
SMDF155
$Y = ON Semiconductor Logo
&Z = Assembly Plant Code
&3 = Numeric Date Code
&K = Lot Code
FGH40T120SMD,
FGH40T120SMDF155 = Specific Device Code
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
© Semiconductor Components Industries, LLC, 2017
November, 2019 Rev. 4
1
Publication Order Number:
FGH40T120SMD/D

FGH40T120SMD
FGH40T120SMD, FGH40T120SMDF155
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Description
Symbol
Ratings
Unit
Collector to Emitter Voltage
Gate to Emitter Voltage
Transient Gate to Emitter Voltage
VCES
VGES
1200
±25
±30
V
V
V
Collector Current
TC = 25°C
IC 80 A
Collector Current
TC = 100°C
40 A
Clamped Inductive Load Current
TC = 25°C
ILM (Note 1)
160
A
Pulsed Collector Current
ICM (Note 2)
160
A
Diode Continuous Forward Current
TC = 25°C
IF 80 A
Diode Continuous Forward Current
TC = 100°C
40 A
Diode Maximum Forward Current
IFM 240 A
Maximum Power Dissipation
TC = 25°C
PD 555 W
Maximum Power Dissipation
TC = 100°C
277 W
Operating Junction Temperature
TJ
55 to +175
°C
Storage Temperature Range
Tstg
55 to +175
°C
Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds
TL
300 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Vcc = 600 V,VGE = 15 V, IC = 160 A, RG = 10 W , Inductive Load
2. Limited by Tjmax
THERMAL CHARACTERISTICS
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Symbol
RqJC(IGBT)
RqJC(Diode)
RqJA
Typ
Max
0.27
0.89
40
Unit
°C/W
°C/W
°C/W
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking
Device
FGH40T120SMD
FGH40T120SMD
FGH40T120SMD
FGH40T120SMDF155
Package
TO2473
(PBFree)
TO2473
(PbFree)
Reel Size
Tape Width
−−
Quantity
30
30
ELECTRCAL CHARACTERISTICS OF THE IGBT (TC = 25°C unless otherwise noted)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
OFF CHARACTERISTICS
Collector to Emitter Breakdown Voltage
Collector CutOff Current
GE Leakage Current
ON CHARACTERISTICs
GE Threshold Voltage
Collector to Emitter Saturation Voltage
BVCES
ICES
IGES
VGE = 0 V, IC = 250 mA
VCE = VCES, VGE = 0 V
VGE = VGES, VCE = 0 V
1200
V
− − 250 mA
− − ±400 nA
VGE(th)
IC = 40 mA, VCE = VGE
4.9 6.2 7.5 V
VCE(sat)
IC = 40 A, VGE = 15 V, TC = 25°C
1.8 2.4 V
IC = 40 A, VGE = 15 V, TC = 175°C 2.0 V
www.onsemi.com
2


Features IGBT - Field Stop, Trench 1200 V, 40 A F GH40T120SMD, FGH40T120SMD-F155 Descript ion Using innovative field stop trench IGBT technology, ON Semiconductor’s n ew series of field stop trench IGBTs of fer the optimum performance for hard sw itching application such as solar inver ter, UPS, welder and PFC applications. Features • FS Trench Technology, Posi tive Temperature Coefficient • High S peed Switching • Low Saturation Volta ge: VCE(sat) = 1.8 V @ IC = 40 A • 10 0% of the Parts tested for ILM(1) • H igh Input Impedance • These Devices a re Pb−Free and are RoHS Compliant App lications • Solar Inverter, Welder, U PS & PFC applications www.onsemi.com C G E EC G TO−247−3LD CASE 340CK T O−247−3LD CASE 340CH MARKING DIAGR AMS $Y&Z&3&K FGH40T120 SMD $Y&Z&3&K F GH40T120 SMD−F155 $Y = ON Semiconduc tor Logo &Z = Assembly Plant Code &3 = Numeric Date Code &K = Lot Code FGH40T1 20SMD, FGH40T120SMD−F155 = Specific D evice Code ORDERING INFORMATION See detailed ordering and shipping information in the package.
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