IGBT
IGBT - Field Stop, Trench
1200 V, 40 A
FGH40T120SMD, FGH40T120SMD-F155
Description Using innovative field stop trench IG...
Description
IGBT - Field Stop, Trench
1200 V, 40 A
FGH40T120SMD, FGH40T120SMD-F155
Description Using innovative field stop trench IGBT technology,
ON Semiconductor’s new series of field stop trench IGBTs offer the optimum performance for hard switching application such as solar inverter, UPS, welder and PFC applications.
Features
FS Trench Technology, Positive Temperature Coefficient High Speed Switching Low Saturation Voltage: VCE(sat) = 1.8 V @ IC = 40 A 100% of the Parts tested for ILM(1) High Input Impedance These Devices are Pb−Free and are RoHS Compliant
Applications
Solar Inverter, Welder, UPS & PFC applications
www.onsemi.com C
G E E C G
TO−247−3LD CASE 340CK
TO−247−3LD CASE 340CH
MARKING DIAGRAM
$Y&Z&3&K FGH40T120 SMD
$Y &Z &3 &K FGH40T120SMD
= ON Semiconductor Logo = Assembly Plant Code = Numeric Date Code = Lot Code = Specific Device Code
ORDERING INFORMATION
See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet.
© Semiconductor Components Industries, LLC, 2017
1
July, 2021 − Rev. 5
Publication Order Number: FGH40T120SMD/D
FGH40T120SMD, FGH40T120SMD−F155
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Description
Symbol
Ratings
Unit
Collector to Emitter Voltage Gate to Emitter Voltage Transient Gate to Emitter Voltage
VCES
1200
V
VGES
±25
V
±30
V
Collector Current
TC = 25°C
IC
80
A
Collector Current
TC = 100°C
40
A
Clamped Inductive Load Current
TC = 25°C
IL...
Similar Datasheet
- FGH40T120SMD-F155 IGBT - ON Semiconductor